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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STD5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5n80k5-datasheets-6636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | YES | SINGLE | GULL WING | STD5N | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 60W Tc | 4A | 16A | 165 mJ | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP25H18DLFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/diodesincorporated-dmp25h18dlfde7-datasheets-6486.pdf | 6-UDFN Exposed Pad | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 260mA | 250V | 600mW Ta | P-Channel | 81pF @ 25V | 14 Ω @ 200mA, 10V | 2.5V @ 1mA | 260mA Ta | 2.8nC @ 10V | 3.5V 10V | ±40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3L140SPFRATL | ROHM Semiconductor | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3l140spfratl-datasheets-6479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 60V | 20W Tc | P-Channel | 1900pF @ 10V | 84m Ω @ 14A, 10V | 3V @ 1mA | 14A Ta | 27nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3682-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd3682f085-datasheets-6616.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 2 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 95W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 46ns | 26 ns | 24 ns | 5.5A | 20V | SILICON | DRAIN | SWITCHING | 95W Tc | TO-252AA | 55 mJ | 100V | N-Channel | 1250pF @ 25V | 36m Ω @ 32A, 10V | 4V @ 250μA | 5.5A Ta 32A Tc | 28nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6619 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6619-datasheets-5955.pdf | 20V | 30A | DirectFET™ Isometric MX | Lead Free | 3 | 7 | EAR99 | BOTTOM | NO LEAD | 260 | 40 | 2.8W | 1 | Not Qualified | R-XBCC-N3 | 71ns | 9.3 ns | 25 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 240A | 0.0022Ohm | 240 mJ | 20V | N-Channel | 5040pF @ 10V | 2.2m Ω @ 30A, 10V | 2.45V @ 250μA | 30A Ta 150A Tc | 57nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM033NB04CR RLG | Taiwan Semiconductor Corporation | $2.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm033nb04crrlg-datasheets-6625.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 107W Tc | N-Channel | 5022pF @ 20V | 3.3m Ω @ 21A, 10V | 4V @ 250μA | 21A Ta 121A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 7.2nF | 150A | 40V | 960mW Ta 132W Tc | N-Channel | 7200pF @ 20V | 1.24mOhm @ 50A, 10V | 2.4V @ 500μA | 150A Tc | 74nC @ 10V | 1.24 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB80N4F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb80n4f6ag-datasheets-6714.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB80N | NOT SPECIFIED | 80A | 40V | 70W Tc | N-Channel | 2150pF @ 25V | 6m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18511Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18511 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 104W Tc | 27A | 400A | 0.0035Ohm | 309 pF | 157 mJ | N-Channel | 5850pF @ 10V | 3.5m Ω @ 24A, 4.5V | 2.45V @ 250μA | 159A Tc | 63nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| MTMF82310BBF | Panasonic Electronic Components | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-mtmf82310bbf-datasheets-6727.pdf | 8-SMD, Flat Lead | 5mm | 950μm | 5mm | 10 Weeks | No SVHC | 8 | 1W | 1W | SO8-F1-B | 6nF | 20 ns | 400 ns | 18A | 20V | 30V | 1.4V | N-Channel | 6000pF @ 10V | 4.2mOhm @ 5A, 10V | 2.5V @ 1mA | 18A Ta | 4.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD2582 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | 150V | 21A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 66mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 95W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 19ns | 19 ns | 32 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 4V | 95W Tc | TO-252AA | 59 mJ | 150V | N-Channel | 1295pF @ 25V | 66m Ω @ 7A, 10V | 4V @ 250μA | 3.7A Ta 21A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS5H610NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/onsemiconductor-ntmfs5h610nlt1g-datasheets-6795.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 43W Tc | N-Channel | 880pF @ 30V | 10m Ω @ 8A, 10V | 2V @ 40μA | 12A Ta 44A Tc | 13.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6005lps13-datasheets-6537.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 3.2W Ta 150W Tc | N-Channel | 2962pF @ 30V | 5.5m Ω @ 50A, 10V | 3V @ 250μA | 20.6A Ta 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3H200SNTL1 | ROHM Semiconductor | $1.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3h200sntl1-datasheets-6207.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 20W Tc | 20A | 40A | 0.04Ohm | N-Channel | 950pF @ 10V | 28m Ω @ 20A, 10V | 2.5V @ 1mA | 20A Ta | 12nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2N100CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2n100cprog-datasheets-6327.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 30 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 77W Tc | 1.85A | 7.4A | 20 mJ | N-Channel | 625pF @ 25V | 8.5 Ω @ 900mA, 10V | 5.5V @ 250μA | 1.85A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOUS66923 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 3-PowerSMD, Flat Leads | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 6.2W Ta 73W Tc | N-Channel | 1725pF @ 50V | 11m Ω @ 20A, 10V | 2.6V @ 250μA | 16.5A Ta 58A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7820DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7820dnt1ge3-datasheets-7585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 240mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 11 ns | 12ns | 12 ns | 30 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 200V | 200V | 1.5W Ta | 0.6 mJ | N-Channel | 240m Ω @ 2.6A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJ460AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj460aept1ge3-datasheets-6389.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 64A | 256A | 0.0087Ohm | 61 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31-T4-GE3 | Vishay Siliconix | $0.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252, (D-Pak) | 670pF | 21.4A | 60V | 5.7W Ta 31.25W Tc | N-Channel | 670pF @ 25V | 31mOhm @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 31 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86369-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86369f085-datasheets-6427.pdf | 8-PowerTDFN | 5 | 4 Weeks | 172.8mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 65A | SILICON | DRAIN | SWITCHING | 80V | 107W Tc | 0.0075Ohm | 27 mJ | N-Channel | 2470pF @ 40V | 7.5m Ω @ 65A, 10V | 4V @ 250μA | 65A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK290P60Y,RQ | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.54mm | 16 Weeks | 1 | 100W | 150°C | 65 ns | 170 ns | 11.5A | 30V | 100W Tc | 600V | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8622 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8622-datasheets-6361.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 4 Weeks | 200mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | FLAT | Single | 31W | 1 | FET General Purpose Power | R-PDSO-F5 | 5.9 ns | 1.6ns | 2.2 ns | 10.2 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 2.5W Ta 31W Tc | MO-240BA | 4A | 30A | 0.056Ohm | 37 mJ | 100V | N-Channel | 402pF @ 50V | 2.9 V | 56m Ω @ 4A, 10V | 4V @ 250μA | 4A Ta 16A Tc | 7.3nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDD26AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd26an06a0f085-datasheets-6340.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 27 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 72ns | 35 ns | 23 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 75W Tc | TO-252AA | 7A | 0.026Ohm | 60V | N-Channel | 800pF @ 25V | 26m Ω @ 36A, 10V | 4V @ 250μA | 7A Ta 36A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4004lk3q13-datasheets-6457.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.9W Ta 180W Tc | 200A | 0.005Ohm | 90 mJ | N-Channel | 4450pF @ 25V | 3m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 83nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4410EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4410eyt1ge3-datasheets-6471.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 5W | 1 | 8-SO | 2.385nF | 11 ns | 7ns | 8 ns | 29 ns | 15A | 20V | 30V | 2V | 5W Tc | 12mOhm | 30V | N-Channel | 2385pF @ 25V | 2 V | 12mOhm @ 10A, 10V | 2.5V @ 250μA | 15A Tc | 53nC @ 10V | 12 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4006SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4006spsq13-datasheets-6482.pdf | 8-PowerTDFN | 5 | 17 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.6W Ta | 0.007Ohm | N-Channel | 2280pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 250μA | 110A Tc | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC2674 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc2674-datasheets-6523.pdf | 220V | 1A | 8-PowerWDFN | 3mm | 950μm | 3mm | Lead Free | 5 | 10 Weeks | 165.33333mg | No SVHC | 366MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | DUAL | FLAT | Single | 2.1W | 1 | FET General Purpose Power | S-PDSO-F5 | 9 ns | 13ns | 21 ns | 15 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 3.4V | 2.1W Ta 42W Tc | 1A | 220V | N-Channel | 1180pF @ 100V | 3.4 V | 366m Ω @ 1A, 10V | 4V @ 250μA | 1A Ta 7A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR464DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir464dpt1ge3-datasheets-6315.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.1mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 69W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 35 ns | 16ns | 16 ns | 48 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5.2W Ta 69W Tc | 29.5A | 70A | 30V | N-Channel | 3545pF @ 15V | 3.1m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6619TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6619-datasheets-5955.pdf | 20V | 30A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 5 | No | 89W | 1 | DIRECTFET™ MX | 5.04nF | 21 ns | 71ns | 9.3 ns | 25 ns | 24A | 20V | 20V | 20V | 1.55V | 2.8W Ta 89W Tc | 3mOhm | 20V | N-Channel | 5040pF @ 10V | 1.55 V | 2.2mOhm @ 30A, 10V | 2.45V @ 250μA | 30A Ta 150A Tc | 57nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| VN3205N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn3205n8g-datasheets-6319.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Not Qualified | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 25 ns | 1.5A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 8A | 0.3Ohm | 30 pF | 50V | N-Channel | 300pF @ 25V | 50ns | 300m Ω @ 1.5A, 10V | 2.4V @ 10mA | 1.5A Tj | 4.5V 10V | ±20V |
