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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Weight | ECCN Code | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXRFSM18N50 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SMPD | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad | 500V | 835W | N-Channel | 2250pF @ 400V | 340m Ω @ 9.5A, 20V | 6.5V @ 250μA | 19A Tc | 42nC @ 10V | 20V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPC60R280E6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS05N70AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R380C6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H601SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h601sk313-datasheets-4333.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 125W Tc | 8A | 15A | 0.6Ohm | 86 mJ | N-Channel | 686pF @ 50V | 600m Ω @ 2.1A, 10V | 4V @ 250μA | 8A Tc | 20.9nC @ 10V | 10V | ±30V | |||||||||||||||||
| IPC60R950C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP615S2LHUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXRFSM12N100 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SMPD | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad | 1000V | 940W | N-Channel | 2875pF @ 800V | 1.05 Ω @ 6A, 15V | 5.5V @ 250μA | 12A Tc | 77nC @ 10V | 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AON7418A | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 30V | 83W Tc | N-Channel | 2994pF @ 15V | 1.7m Ω @ 20A, 10V | 2.2V @ 250μA | 50A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPI80N07S405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n07s405aksa1-datasheets-4322.pdf | 3 | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 75V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 80A | 320A | 0.0055Ohm | 240 mJ | ||||||||||||||||||||||||||||||||
| DMJ70H601SV3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h601sv3-datasheets-4325.pdf | TO-251-3 Stub Leads, IPak | 3 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 700V | 125W Tc | 8A | 15A | 0.6Ohm | 86 mJ | N-Channel | 686pF @ 50V | 600m Ω @ 2.1A, 10V | 4V @ 250μA | 8A Tc | 20.9nC @ 10V | 10V | ±30V | |||||||||||||||||||
| DMJ70H1D0SV3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h1d0sv3-datasheets-3749.pdf | TO-251-3 Stub Leads, IPak | 3 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 700V | 104W Tc | 6A | 8A | 1Ohm | 7.5 mJ | N-Channel | 420pF @ 50V | 1 Ω @ 1.5A, 10V | 4V @ 250μA | 6A Tc | 12.8nC @ 10V | 10V | ±30V | |||||||||||||||||||
| AO3401AL | Alpha & Omega Semiconductor Inc. | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao3401aldelta-datasheets-3482.pdf | TO-236-3, SC-59, SOT-23-3 | compliant | 30V | 1.4W Ta | P-Channel | 645pF @ 15V | 50m Ω @ 4A, 10V | 1.3V @ 250μA | 4A Ta | 14nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| FDD24AN06LA0_SB82179 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 75W Tc | N-Channel | 1850pF @ 25V | 19m Ω @ 40A, 10V | 2V @ 250μA | 7.1A Ta 40A Tc | 21nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FCPF11N65_G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XR46000ESE | MaxLinear, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/maxlinearinc-xr46000ese-datasheets-3729.pdf | TO-261-4, TO-261AA | compliant | 600V | 20W Tc | N-Channel | 170pF @ 25V | 8 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 7.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIS496EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-sis496edntt1ge3-datasheets-3696.pdf | PowerPAK® 1212-8 | 5 | 13 Weeks | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 50A | 200A | 0.0048Ohm | 31 mJ | N-Channel | 1515pF @ 15V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||
| AOTF12N60FD_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7000BU_T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) | 2N7000 | 60V | 400mW Ta | N-Channel | 50pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AO3419_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD4185_003 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM6NB60CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | TO-220 | 600V | 40W Tc | N-Channel | 872pF @ 25V | 1.6Ohm @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 18.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| DMJ70H1D5SV3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h1d5sv3-datasheets-3692.pdf | TO-251-3 Stub Leads, IPak | 3 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 700V | 78W Tc | 5A | 6A | 7.5 mJ | N-Channel | 316pF @ 50V | 1.5 Ω @ 1A, 10V | 4V @ 250μA | 5A Tc | 9.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| FQPF5N60C_F105 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 600V | 33W Tc | N-Channel | 670pF @ 25V | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| DMJ70H1D4SV3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h1d4sv3-datasheets-3687.pdf | TO-251-3 Stub Leads, IPak | 3 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 700V | 78W Tc | 5A | 6A | 7.5 mJ | N-Channel | 342pF @ 50V | 1.5 Ω @ 1A, 10V | 4V @ 250μA | 5A Tc | 7.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| TSM8N50CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 500V | 89W Tc | N-Channel | 1595pF @ 25V | 850mOhm @ 3.6A, 10V | 4V @ 250μA | 7.2A Tc | 26.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NDS355AN_G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 30V | 500mW Ta | N-Channel | 195pF @ 15V | 85mOhm @ 1.9A, 10V | 2V @ 250μA | 1.7A Ta | 5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS0306S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF10N60C_F105 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf10n60cf105-datasheets-3667.pdf | TO-220-3 Full Pack | 3 | 2.27g | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 9.5A | 38A | 0.73Ohm | 700 mJ | N-Channel | 2040pF @ 25V | 730m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||
| FDZ191P_P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | Not Applicable | MOSFET (Metal Oxide) | 6-UFBGA, WLCSP | 20V | 1.9W Ta | P-Channel | 800pF @ 10V | 85m Ω @ 1A, 4.5V | 1.5V @ 250μA | 3A Ta | 13nC @ 10V | 1.5V 4.5V | ±8V |
