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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM060N03CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm060n03cprog-datasheets-1011.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 54W Tc | N-Channel | 1160pF @ 25V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 70A Tc | 11.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7880-55A/CUX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk788055acux-datasheets-0975.pdf | TO-261-4, TO-261AA | 4 | 16 Weeks | 4 | Tin | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 8 ns | 52ns | 9 ns | 17 ns | 7A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8W Tc | 7A | 30A | 0.08Ohm | 53 mJ | N-Channel | 500pF @ 25V | 80m Ω @ 10A, 10V | 4V @ 1mA | 7A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9225-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk922555a118-datasheets-0556.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 94W | 1 | R-PSSO-G2 | 17 ns | 104ns | 80 ns | 82 ns | 43A | 15V | 55V | SILICON | DRAIN | SWITCHING | 94W Tc | 0.027Ohm | 55V | N-Channel | 1724pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 1mA | 43A Tc | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn3r030yldx-datasheets-0677.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | YES | SINGLE | GULL WING | 4 | 1 | 91W | 1 | 13.5 ns | 21ns | 12.4 ns | 16.9 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 91W Tc | MO-235 | 227.5 mJ | 30V | N-Channel | 2939pF @ 15V | 3.1m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 46.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4858NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | 6.2MOhm | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 2W | 1 | FET General Purpose Power | R-PSSO-G2 | 12.6 ns | 17.3ns | 2.8 ns | 23.8 ns | 13.6A | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta 54.5W Tc | 73A | 25V | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN011-60MSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn01160msx-datasheets-0856.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | No | YES | SINGLE | GULL WING | 8 | 1 | 1 | R-PSSO-G4 | 6.7 ns | 8.46ns | 9.18 ns | 16.9 ns | 61A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 91W Tc | 232A | 50.6 mJ | 60V | N-Channel | 1368pF @ 30V | 11.3m Ω @ 15A, 10V | 4V @ 1mA | 61A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM2308CX RFG | Taiwan Semiconductor Corporation | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2308cxrfg-datasheets-0876.pdf | TO-236-3, SC-59, SOT-23-3 | e3 | Tin (Sn) | 260 | 30 | 60V | 1.25W Ta | N-Channel | 511pF @ 15V | 156m Ω @ 3A, 10V | 2.5V @ 250μA | 3A Ta | 4.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2302CX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/taiwansemiconductorcorporation-tsm2302cxrfg-datasheets-0788.pdf | TO-236-3, SC-59, SOT-23-3 | 20 Weeks | SOT-23 | 20V | 1.5W Tc | N-Channel | 587pF @ 10V | 65mOhm @ 3.2A, 4.5V | 1.2V @ 250μA | 3.9A Tc | 7.8nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9222-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk922255a118-datasheets-0898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | Tin | No | e3 | GULL WING | 3 | Single | 103W | 1 | R-PSSO-G2 | 19 ns | 124ns | 93 ns | 92 ns | 75mA | 15V | 55V | SILICON | DRAIN | SWITCHING | 103W Tc | 48A | 0.024Ohm | 55V | N-Channel | 2210pF @ 25V | 20m Ω @ 25A, 10V | 2V @ 1mA | 48A Tc | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM680P06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm680p06chx0g-datasheets-8989.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 260 | 30 | 60V | 20W Tc | P-Channel | 870pF @ 30V | 68m Ω @ 6A, 10V | 2.2V @ 250μA | 18A Tc | 16.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ860EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj860ept1ge3-datasheets-0911.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 48W | 1 | 175°C | R-PSSO-G4 | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 36A | 0.006Ohm | 40V | N-Channel | 2700pF @ 25V | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD22205LT | Texas Instruments | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 4-XFLGA | 1.16mm | 1.16mm | 4 | 16 Weeks | 4 | ACTIVE (Last Updated: 1 day ago) | yes | 330μm | YES | BOTTOM | NO LEAD | NOT SPECIFIED | CSD22205 | Single | NOT SPECIFIED | 1 | SILICON | SWITCHING | 8V | 8V | 600mW Ta | 71A | 250 pF | P-Channel | 1390pF @ 4V | 9.9m Ω @ 1A, 4.5V | 1.05V @ 250μA | 7.4A Ta | 8.5nC @ 4.5V | 1.5V 4.5V | -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6294 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fds6294-datasheets-0639.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 11.3MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 3W | 1 | FET General Purpose Power | 9 ns | 4ns | 6 ns | 24 ns | 13A | 20V | 30V | SILICON | SWITCHING | 1.8V | 3W Ta | 50A | 30V | N-Channel | 1205pF @ 15V | 1.8 V | 11.3m Ω @ 13A, 10V | 3V @ 250μA | 13A Ta | 14nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| CSD23285F5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 1.49mm | 730μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 338μm | EAR99 | BOTTOM | NOT SPECIFIED | CSD23285 | Single | NOT SPECIFIED | 1 | 5.4A | SILICON | SWITCHING | 12V | 12V | 500mW Ta | 48 pF | P-Channel | 628pF @ 6V | 35m Ω @ 1A, 4.5V | 950mV @ 250μA | 5.4A Ta | 4.2nC @ 4.5V | 1.5V 4.5V | -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM301K12CQ RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm301k12cqrfg-datasheets-0777.pdf | 6-VDFN Exposed Pad | 12 Weeks | 260 | 30 | 20V | 6.5W Tc | P-Channel | 5.2pF @ 6V | 94m Ω @ 2.8A, 4.5V | 500mV @ 250μA | 4.5A Ta | 4.5nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4932NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nttfs4932ntag-datasheets-0807.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | 8 | Single | 2.2W | 1 | FET General Purpose Power | S-XDSO-N5 | 15.5 ns | 22.6ns | 4.8 ns | 29 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 850mW Ta 43W Tc | 0.0055Ohm | 30V | N-Channel | 3111pF @ 15V | 4m Ω @ 20A, 10V | 2.2V @ 250μA | 11A Ta 79A Tc | 46.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| QS5U28TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | -20V | -2A | SOT-23-5 Thin, TSOT-23-5 | 2.9mm | 850μm | 1.6mm | Lead Free | 5 | 20 Weeks | 5 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 5 | Single | 10 | 1.25W | 1 | Other Transistors | 10 ns | 16ns | 16 ns | 32 ns | 2A | 12V | SILICON | SWITCHING | 20V | 1.25W Ta | 2A | -20V | P-Channel | 450pF @ 10V | 125m Ω @ 2A, 4.5V | 2V @ 1mA | 2A Ta | 4.8nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| IRLL2703TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll2703trpbf-datasheets-9455.pdf | 30V | 3.9A | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Contains Lead | 4 | 14 Weeks | 60mOhm | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.1W | 1 | R-PDSO-G4 | 1V | 7.4 ns | 24ns | 14 ns | 6.9 ns | 3.9A | 16V | SILICON | DRAIN | SWITCHING | 1W Ta | 16A | 180 mJ | 30V | N-Channel | 530pF @ 25V | 45m Ω @ 3.9A, 10V | 2.4V @ 250μA | 3.9A Ta | 14nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| NVR5124PLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-nvr5124plt1g-datasheets-0847.pdf | TO-236-3, SC-59, SOT-23-3 | 1.11mm | Lead Free | 3 | 11 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | GULL WING | 1 | -470mW | 1 | 150°C | R-PDSO-G3 | 6.6 ns | 12.2 ns | -1.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 470mW Ta | 0.365Ohm | -60V | P-Channel | 240pF @ 25V | 230m Ω @ 3A, 10V | 2.5V @ 250μA | 1.1A Ta | 4.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD13306WT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | 2mm | ULTRA LOW RESISTANCE | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD13306 | 1 | Single | 1.9W | 1 | 150°C | 7 ns | 11ns | 8 ns | 20 ns | 3.5A | 10V | SILICON | SWITCHING | 12V | 1V | 1.9W Ta | 294 pF | N-Channel | 1370pF @ 6V | 10.2m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 3.5A Ta | 11.2nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| RF4E100AJTCR | ROHM Semiconductor | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/rohm-rf4e100ajtcr-datasheets-1939.pdf | 8-PowerUDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Tc | 10A | 36A | 0.0124Ohm | 6.7 mJ | N-Channel | 1460pF @ 15V | 12.4m Ω @ 10A, 4.5V | 1.5V @ 1mA | 10A Ta | 13nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM090N03ECP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm090n03ecprog-datasheets-0668.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 30V | 40W Tc | N-Channel | 680pF @ 25V | 9m Ω @ 16A, 10V | 2.5V @ 250μA | 50A Tc | 7.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R4-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn2r430yldx-datasheets-0671.pdf | SC-100, SOT-669 | 4 | 4 Weeks | 4 | No | YES | SINGLE | GULL WING | 4 | 1 | 1 | 16.3 ns | 27.5ns | 13.9 ns | 17.4 ns | 100A | 2.2V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 625A | N-Channel | 2256pF @ 15V | 2.4m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 31.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ058N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz058n03lsgatma1-datasheets-0526.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | R-PDSO-N5 | 4.6 ns | 3.6ns | 3.2 ns | 19 ns | 15A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 45W Tc | 40A | 55 mJ | N-Channel | 2400pF @ 15V | 5.8m Ω @ 20A, 10V | 2.2V @ 250μA | 15A Ta 40A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RRQ045P03TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohm-rrq045p03tr-datasheets-1948.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 20 Weeks | 35MOhm | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | Single | 10 | 1.25W | 1 | Other Transistors | 10 ns | 35ns | 65 ns | 110 ns | 4.5A | 20V | SILICON | SWITCHING | 30V | 600mW Ta | 18A | -30V | P-Channel | 1350pF @ 10V | 35m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 14nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9M5R2-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m5r230ex-datasheets-0732.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Ta | 70A | 358A | 0.0052Ohm | 79.2 mJ | N-Channel | 2467pF @ 25V | 4.1m Ω @ 25A, 10V | 2.1V @ 1mA | 70A Ta | 22.5nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN028-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn028100ys115-datasheets-0756.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | 4 | 89W | 1 | 15 ns | 14ns | 12 ns | 33 ns | 42A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 89W Tc | MO-235 | 30A | 0.0275Ohm | 68 mJ | 100V | N-Channel | 1634pF @ 50V | 27.5m Ω @ 15A, 10V | 4V @ 1mA | 42A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C06NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nttfs4c06ntag-datasheets-8106.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 18A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 810mW Ta 31W Tc | 67A | N-Channel | 3366pF @ 15V | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 11A Ta 67A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| RD3P050SNTL1 | ROHM Semiconductor | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 15W Tc | 5A | 20A | 0.205Ohm | N-Channel | 530pF @ 25V | 190m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 14nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH7R204PL,LQ | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8-SOP Advance (5x5) | 40V | 69W Tc | N-Channel | 2040pF @ 20V | 9.7mOhm @ 15A, 4.5V | 2.4V @ 200μA | 48A Tc | 24nC @ 10V | 4.5V 10V | ±20V |
