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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC100N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsc100n03msgatma1-datasheets-8998.pdf | 8-PowerTDFN | Contains Lead | 8 | 39 Weeks | 8 | no | EAR99 | AVALANCHE RATED | Tin | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 30W | 1 | FET General Purpose Powers | Not Qualified | 4.8ns | 12A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 30W Tc | 44A | N-Channel | 1700pF @ 15V | 10m Ω @ 30A, 10V | 2V @ 250μA | 12A Ta 44A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R8-100PSEQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn7r8100pseq-datasheets-9067.pdf | TO-220-3 | 3 | 12 Weeks | IEC-60134 | SINGLE | 3 | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 294W Tc | TO-220AB | 473A | 0.0078Ohm | 315 mJ | N-Channel | 7110pF @ 50V | 7.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tj | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQNL2N50BTA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqnl2n50bta-datasheets-9084.pdf&product=onsemiconductor-fqnl2n50bta-6833538 | 500V | 350mA | TO-226-3, TO-92-3 Long Body (Formed Leads) | 4.9mm | 8mm | 3.9mm | Lead Free | 3 | 6 Weeks | 371.1027mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | BOTTOM | NOT SPECIFIED | Single | NOT SPECIFIED | 1.5W | 1 | FET General Purpose Power | Not Qualified | 6 ns | 25ns | 25 ns | 10 ns | 350mA | 30V | SILICON | SWITCHING | 1.5W Tc | 500V | N-Channel | 230pF @ 25V | 5.3 Ω @ 175mA, 10V | 3.7V @ 250μA | 350mA Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| RSR025N03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2.5A | SC-96 | Lead Free | 3 | 20 Weeks | No SVHC | 118MOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 6 ns | 10ns | 5 ns | 20 ns | 2.5A | 20V | 30V | SILICON | SWITCHING | 2.5V | 1W Ta | 30V | N-Channel | 165pF @ 10V | 2.5 V | 70m Ω @ 2.5A, 10V | 2.5V @ 1mA | 2.5A Ta | 4.1nC @ 5V | 4V 10V | |||||||||||||||||||||||||||||||||||||||||||
| SIHA15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n65ege3-datasheets-8897.pdf | TO-220-3 Full Pack | 18.1mm | 18 Weeks | 1 | 34W | 150°C | 18 ns | 48 ns | 15A | 30V | 34W Tc | 650V | N-Channel | 2460pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTR030P02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-rtr030p02tl-datasheets-8366.pdf | -20V | -3A | SC-96 | Lead Free | 3 | 12 Weeks | No SVHC | 55MOhm | 3 | yes | EAR99 | Copper, Silver, Tin | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 12 ns | 20ns | 20 ns | 50 ns | 3A | 12V | -20V | SILICON | SWITCHING | 20V | -2V | 1W Ta | 3A | -20V | P-Channel | 840pF @ 10V | -2 V | 75m Ω @ 3A, 4.5V | 2V @ 1mA | 3A Ta | 9.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| PSMN045-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn04580ys115-datasheets-8792.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 45MOhm | 4 | Tin | No | e3 | YES | GULL WING | 4 | Single | 56W | 1 | 9.2 ns | 4.6ns | 4.4 ns | 18 ns | 24A | 20V | 80V | SILICON | DRAIN | SWITCHING | 56W Tc | MO-235 | 86A | 18 mJ | 80V | N-Channel | 675pF @ 40V | 45m Ω @ 5A, 10V | 4V @ 1mA | 24A Tc | 12.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUS3A18PZTCG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntlus3a18pztag-datasheets-5438.pdf | 6-UDFN Exposed Pad | Lead Free | 6 | 2 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | YES | DUAL | 6 | 1 | Single | 1 | Other Transistors | 8.6 ns | 15ns | 88 ns | 150 ns | 5.1A | 8V | SILICON | DRAIN | SWITCHING | 20V | 700mW Ta | 8.2A | -20V | P-Channel | 2240pF @ 15V | 18m Ω @ 7A, 4.5V | 1V @ 250μA | 5.1A Ta | 28nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y72-80E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y7280e115-datasheets-8918.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 6.2 ns | 9.4ns | 8.3 ns | 11 ns | 15A | 15V | 80V | SILICON | DRAIN | SWITCHING | 45W Tc | MO-235 | 0.078Ohm | N-Channel | 898pF @ 25V | 72m Ω @ 5A, 10V | 2.1V @ 1mA | 15A Tc | 7.9nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP230,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nexperiausainc-bsp230135-datasheets-8927.pdf | TO-261-4, TO-261AA | 4 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 4 | 1.5W | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 1.5W Ta | 0.21A | 15 pF | P-Channel | 90pF @ 25V | 17 Ω @ 170mA, 10V | 2.55V @ 1mA | 210mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3457CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3457cdvt1e3-datasheets-8953.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 40 ns | 80ns | 12 ns | 20 ns | 5.1A | 20V | SILICON | SWITCHING | 30V | 30V | 3W Tc | 0.074Ohm | P-Channel | 450pF @ 15V | 74m Ω @ 4.1A, 10V | 3V @ 250μA | 5.1A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMP2008UFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp2008ufg7-datasheets-7416.pdf | 8-PowerVDFN | 5 | 19 Weeks | No SVHC | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 40 | 1 | Other Transistors | S-PDSO-N5 | 22 ns | 33ns | 124 ns | 291 ns | 12A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.4W Ta 41W Tc | 14A | 113 mJ | P-Channel | 6909pF @ 10V | 8m Ω @ 12A, 4.5V | 1V @ 250μA | 14A Ta 54A Tc | 72nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN030-60YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn03060ys115-datasheets-8599.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 24.7MOhm | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 56W | 1 | 10 ns | 6ns | 5 ns | 19 ns | 29A | 20V | 60V | SILICON | DRAIN | SWITCHING | 56W Tc | MO-235 | 116A | 23 mJ | 54V | N-Channel | 686pF @ 30V | 24.7m Ω @ 15A, 10V | 4V @ 1mA | 29A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOT2502L | Alpha & Omega Semiconductor Inc. | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | TO-220 | 3.01nF | 106A | 150V | 8.3W Ta 277W Tc | N-Channel | 3010pF @ 75V | 11mOhm @ 20A, 10V | 5.1V @ 250μA | 18.5A Ta 106A Tc | 60nC @ 10V | 11 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443CDV-T1-E3 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3443cdvt1e3-datasheets-8804.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 60mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | 27 ns | 59ns | 11 ns | 30 ns | 3.9A | 12V | SILICON | SWITCHING | 20V | 20V | -600mV | 2W Ta 3.2W Tc | 4.7A | 20A | P-Channel | 610pF @ 10V | -600 mV | 60m Ω @ 4.7A, 4.5V | 1.5V @ 250μA | 5.97A Tc | 12.4nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| BUK9Y153-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y153100e115-datasheets-8632.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | 1 | Single | 30 | 1 | 6 ns | 10.9ns | 7.9 ns | 10 ns | 9.4A | 15V | 100V | SILICON | DRAIN | SWITCHING | 37W Tc | MO-235 | 38A | 9.5 mJ | 100V | N-Channel | 716pF @ 25V | 146m Ω @ 2A, 10V | 2.1V @ 1mA | 9.4A Tc | 6.8nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSP122,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | /files/nexperiausainc-bsp122115-datasheets-8844.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 4 Weeks | 4.535924g | No SVHC | 2.5Ohm | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | DUAL | GULL WING | 260 | 4 | Single | 30 | 1.5W | 1 | R-PDSO-G4 | 550mA | 20V | 200V | SILICON | DRAIN | SWITCHING | 2V | 1.5W Ta | 0.55A | 200V | N-Channel | 100pF @ 25V | 2 V | 2.5 Ω @ 750mA, 10V | 2V @ 1mA | 550mA Ta | 2.4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMT3020LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt3020lfdf7-datasheets-8873.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 8.4A | 30V | 700mW Ta 1.8W Tc | N-Channel | 393pF @ 15V | 17m Ω @ 9A, 10V | 2.5V @ 250μA | 8.4A Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM180P03CS RLG | Taiwan Semiconductor Corporation | $5.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm180p03csrlg-datasheets-8596.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 30V | 2.5W Tc | P-Channel | 1730pF @ 15V | 18mOhm @ 8A, 10V | 2.5V @ 250μA | 10A Tc | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C13NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nttfs4c13ntag-datasheets-4647.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 780mW Ta 21.5W Tc | 0.0094Ohm | N-Channel | 770pF @ 15V | 9.4m Ω @ 30A, 10V | 2.1V @ 250μA | 7.2A Ta | 7.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSM1NB60CW RPG | Taiwan Semiconductor Corporation | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm1nb60cprog-datasheets-5512.pdf | TO-261-4, TO-261AA | 20 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 600V | 39W Tc | N-Channel | 138pF @ 25V | 10 Ω @ 500mA, 10V | 4.5V @ 250μA | 1A Tc | 6.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2312CX RFG | Taiwan Semiconductor Corporation | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2312cxrfg-datasheets-8656.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 20 Weeks | EAR99 | ULTRA LOW RESISTANCE | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 750mW Ta | 4.9A | 0.033Ohm | N-Channel | 500pF @ 10V | 33m Ω @ 4.9A, 4.5V | 1V @ 250μA | 4.9A Tc | 11.2nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC3612 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdc3612-datasheets-8675.pdf | 100V | 2.6A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 6 Weeks | 36mg | No SVHC | 125MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.6W | 1 | FET General Purpose Power | 150°C | 6 ns | 3.5ns | 3.5 ns | 23 ns | 2.6A | 20V | 100V | SILICON | SWITCHING | 2.3V | 1.6W Ta | 100V | N-Channel | 660pF @ 50V | 2.3 V | 125m Ω @ 2.6A, 10V | 4V @ 250μA | 2.6A Ta | 20nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTLJF3117PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntljf3117pt1g-datasheets-8559.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 2 Weeks | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | C BEND | 260 | 6 | Single | 40 | 1.5W | 1 | Other Transistors | 5.2 ns | 15ns | 15 ns | 19.8 ns | -3.3A | 8V | SILICON | SWITCHING | 20V | 710mW Ta | 2.3A | 20A | -20V | P-Channel | 531pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 2.3A Ta | 6.2nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| BSL211SPH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsl211sph6327xtsa1-datasheets-8642.pdf | -20V | -4.7A | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | 10 Weeks | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2W | 1 | 8.7 ns | 13.9ns | 23.3 ns | 25 ns | 4.7A | 12V | -20V | SILICON | SWITCHING | 20V | 2W Ta | -20V | P-Channel | 654pF @ 15V | 67m Ω @ 4.7A, 4.5V | 1.2V @ 25μA | 4.7A Ta | 12.4nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C10NTAG | ON Semiconductor | $15.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nttfs4c10ntag-datasheets-8248.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | FET General Purpose Power | 44A | 20V | 30V | 790mW Ta 23.6W Tc | N-Channel | 993pF @ 15V | 7.4m Ω @ 30A, 10V | 2.2V @ 250μA | 8.2A Ta 44A Tc | 18.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282ZE3180AATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3230aksa2-datasheets-2094.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | Contains Lead | 18 Weeks | 1.59999g | Tin | Halogen Free | 1 | Single | PG-TO263-7-1 | 4.8nF | 49V | 30 ns | 37ns | 36 ns | 70 ns | 80A | 20V | 49V | 49V | 300W Tc | 6.5mOhm | 49V | N-Channel | 4800pF @ 25V | 6.5mOhm @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 6.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4229PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfi4229pbf-datasheets-8549.pdf | TO-220-3 | 10.63mm | 9.8mm | 4.83mm | 3 | 12 Weeks | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 260 | Single | 40 | 46W | 1 | FET General Purpose Power | 18 ns | 17ns | 13 ns | 32 ns | 19A | 30V | SILICON | ISOLATED | SWITCHING | 46W Tc | TO-220AB | 72A | 0.046Ohm | 110 mJ | 250V | N-Channel | 4480pF @ 25V | 46m Ω @ 11A, 10V | 5V @ 250μA | 19A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R5-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn7r530yldx-datasheets-8567.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | YES | SINGLE | GULL WING | 4 | 1 | 1 | 7.1 ns | 10.4ns | 5.5 ns | 8.5 ns | 51A | 2.2V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34W Tc | MO-235 | 202A | 0.0075Ohm | 27.6 mJ | 30V | N-Channel | 655pF @ 15V | 7.5m Ω @ 15A, 10V | 2.2V @ 1mA | 51A Tj | 11.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf33n60m2-datasheets-4194.pdf | TO-220-3 | Lead Free | 16 Weeks | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STP33N | 1 | Single | 190W | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | 190W Tc | 600V | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V |
