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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Collector Emitter Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMN6066SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn6066sss13-datasheets-0487.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 8 | 2 | Dual | 40 | 1 | FET General Purpose Power | 2.7 ns | 2.4ns | 5.4 ns | 14.7 ns | 3.7A | 20V | SILICON | SWITCHING | 60V | 60V | 1.56W Ta | 5A | 0.066Ohm | N-Channel | 502pF @ 30V | 66m Ω @ 4.5A, 10V | 3V @ 250μA | 3.7A Ta | 10.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TSM120N06LCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm120n06lcsrlg-datasheets-0406.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 12.5W Tc | 10A | 92A | 0.015Ohm | 54 mJ | N-Channel | 2193pF @ 30V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 23A Tc | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N04S410ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd50n04s410atma1-datasheets-0548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 41W Tc | 50A | 200A | 0.0093Ohm | 42 mJ | N-Channel | 1430pF @ 25V | 9.3m Ω @ 50A, 10V | 4V @ 15μA | 50A Tc | 18.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TSM085P03CS RLG | Taiwan Semiconductor Corporation | $1.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm085p03csrlg-datasheets-0351.pdf | 8-SOIC (0.154, 3.90mm Width) | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 14W Tc | P-Channel | 3216pF @ 15V | 8.5m Ω @ 13A, 10V | 2.5V @ 250μA | 34A Tc | 56nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM160P02CS RLG | Taiwan Semiconductor Corporation | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm160p02csrlg-datasheets-0275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | YES | DUAL | GULL WING | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Tc | 11A | 0.016Ohm | P-Channel | 2320pF @ 15V | 16m Ω @ 6A, 4.5V | 1V @ 250μA | 11A Tc | 27nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y12-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y1240e115-datasheets-0038.pdf | 13.081mm | SC-100, SOT-669 | 14.859mm | Black | Plastic | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 4 | 1 | Single | 1 | 9 ns | 13ns | 9 ns | 13 ns | 52A | 15V | 40V | DRAIN | SWITCHING | 65W Tc | MO-235 | 208A | 23 mJ | 40V | N-Channel | 1423pF @ 25V | 10m Ω @ 15A, 10V | 2.1V @ 1mA | 52A Tc | 9.8nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| TSM2N60SCW RPG | Taiwan Semiconductor Corporation | $4.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2n60scwrpg-datasheets-0055.pdf | TO-261-4, TO-261AA | 22 Weeks | 600V | 2.5W Tc | N-Channel | 435pF @ 25V | 5 Ω @ 600mA, 10V | 4V @ 250μA | 600mA Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3006LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmt3006lfg7-datasheets-0400.pdf | 8-PowerVDFN | 5 | 22 Weeks | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | 55.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 27.8W Tc | 16A | 0.01Ohm | 31 mJ | N-Channel | 1320pF @ 15V | 6m Ω @ 12A, 10V | 3V @ 250μA | 16A Ta 55.6A Tc | 22.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM340N06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm340n06chx0g-datasheets-8505.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | TO-252, (D-Pak) | 60V | 66W Tc | N-Channel | 1180pF @ 30V | 34mOhm @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 16.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME905PT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdme905pt-datasheets-0323.pdf | 6-PowerUFDFN | 1.6mm | 500μm | 1.6mm | 3 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 700mW | 1 | Other Transistors | S-PDSO-N3 | 9.5 ns | 8ns | 42 ns | 90 ns | 8A | 8V | SILICON | DRAIN | SWITCHING | -700mV | 2.1W Ta | 8A | 0.022Ohm | 12V | P-Channel | 2315pF @ 6V | 22m Ω @ 8A, 4.5V | 1V @ 250μA | 8A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| PSMN3R5-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn3r530yl115-datasheets-0299.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 74W | 1 | 33 ns | 50ns | 18 ns | 45 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 74W Tc | MO-235 | 0.0056Ohm | 30V | N-Channel | 2458pF @ 12V | 3.5m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RSS065N06FRATB | ROHM Semiconductor | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2W Ta | 6.5A | 26A | 0.048Ohm | N-Channel | 900pF @ 10V | 37m Ω @ 6.5A, 10V | 2.5V @ 1mA | 6.5A Ta | 16nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RS3E075ATTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohm-rs3e075attb-datasheets-1930.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | No SVHC | 18mOhm | 8 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | -7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -2.5V | 2W Ta | 30A | 4.2 mJ | P-Channel | 1250pF @ 15V | 23.5m Ω @ 7.5A, 10V | 2.5V @ 1mA | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5124PLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvtfs5124pltag-datasheets-4840.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 8 | 1 | Single | Other Transistors | 7 ns | 14ns | 10 ns | 13 ns | 2.4A | 20V | 60V | 3W Ta 18W Tc | 6A | P-Channel | 250pF @ 25V | 260m Ω @ 3A, 10V | 2.5V @ 250μA | 2.4A Ta | 6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TPH7R204PL,LQ | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8-SOP Advance (5x5) | 40V | 69W Tc | N-Channel | 2040pF @ 20V | 9.7mOhm @ 15A, 4.5V | 2.4V @ 200μA | 48A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD3055-150T4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvd3055150t4gvf01-datasheets-0143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | 60V | 1.5W Ta 28.8W Tj | N-Channel | 280pF @ 25V | 150m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Ta | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMA2P853 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdfma2p853-datasheets-0021.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | 120MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.4W | 1 | Other Transistors | 9 ns | 11ns | 11 ns | 15 ns | 3A | 8V | SILICON | DRAIN | SWITCHING | 1.4W Ta | MO-229VCCC | 2V | 2.2A | 20V | P-Channel | 435pF @ 10V | 120m Ω @ 3A, 4.5V | 1.3V @ 250μA | 3A Ta | 6nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4435ddyt1ge3-datasheets-8870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 24mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 42 ns | 35ns | 16 ns | 40 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5W Tc | -30V | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 11.4A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSP320SH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsp320sh6327xtsa1-datasheets-0180.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | 11 ns | 25ns | 35 ns | 25 ns | 2.9A | 20V | 60V | SILICON | 3V | 1.8W Ta | 56 ns | 60 mJ | N-Channel | 340pF @ 25V | 120m Ω @ 2.9A, 10V | 4V @ 20μA | 2.9A Tj | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TPH8R903NL,LQ | Toshiba Semiconductor and Storage | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | No | 1 | 8.3 ns | 2.4ns | 8.3 ns | 14 ns | 20A | 20V | 1.6W Ta 24W Tc | 30V | N-Channel | 820pF @ 15V | 8.9m Ω @ 10A, 10V | 2.3V @ 1mA | 20A Tc | 9.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5471DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5471dct1ge3-datasheets-0084.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 20mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 22 ns | 78 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.5W Ta 6.3W Tc | 6A | -20V | P-Channel | 2945pF @ 10V | 20m Ω @ 9.1A, 4.5V | 1.1V @ 250μA | 6A Tc | 96nC @ 10V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| IRF9333TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9333trpbf-datasheets-0027.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 19.4MOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 16 ns | 44ns | 49 ns | 55 ns | -9.2A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 75A | -30V | P-Channel | 1110pF @ 25V | -1.8 V | 19.4m Ω @ 9.2A, 10V | 2.4V @ 25μA | 9.2A Ta | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD135N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd135n03lgatma1-datasheets-0106.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 31W | 1 | Not Qualified | R-PSSO-G2 | 3 ns | 2.2 ns | 12 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 30V | 31W Tc | TO-252AA | 210A | 20 mJ | N-Channel | 1000pF @ 15V | 13.5m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| PSMN069-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn069100ys115-datasheets-9967.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 72.4MOhm | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 30 | 56W | 1 | 10 ns | 7ns | 5 ns | 19 ns | 17A | 20V | 100V | SILICON | DRAIN | SWITCHING | 56W Tc | 68A | 90V | N-Channel | 645pF @ 50V | 72.4m Ω @ 5A, 10V | 4V @ 1mA | 17A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMA507PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma507pz-datasheets-9996.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 24MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | Single | 2.4W | 1 | Other Transistors | 6.4 ns | 14ns | 96 ns | 192 ns | 7.8A | 8V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 2.4W Ta | -20V | P-Channel | 2015pF @ 10V | -500 mV | 24m Ω @ 7.8A, 5V | 1.5V @ 250μA | 7.8A Ta | 42nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IRLR8256TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlr8256trpbf-datasheets-0064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 63W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.7 ns | 46ns | 8.5 ns | 12 ns | 81A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | TO-252AA | 0.0057Ohm | 86 mJ | 25V | N-Channel | 1470pF @ 13V | 5.7m Ω @ 25A, 10V | 2.35V @ 25μA | 81A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9Y14-40B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk9y1440b115-datasheets-0043.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | 4 | 12 Weeks | 4.535924g | 4 | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 260 | 4 | 30 | 85W | 1 | 15 ns | 34ns | 42 ns | 68 ns | 56A | 15V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | 226A | 0.016Ohm | 89 mJ | 40V | N-Channel | 1800pF @ 25V | 11m Ω @ 20A, 10V | 2V @ 1mA | 56A Tc | 21nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||
| FDMA7670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma7670-datasheets-0077.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | 6 | 16 Weeks | 30mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | Single | 2.4W | 1 | FET General Purpose Power | 8 ns | 3ns | 3 ns | 19 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta | 55 pF | 30V | N-Channel | 1360pF @ 15V | 15m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMC7692 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7692-datasheets-0266.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 23 Weeks | 200mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.3W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-N5 | 9 ns | 4ns | 3 ns | 21 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.3W Ta 29W Tc | 40A | 30V | N-Channel | 1680pF @ 15V | 1.9 V | 8.5m Ω @ 13.3A, 10V | 3V @ 250μA | 13.3A Ta 16A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TSM1N80CW RPG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm1n80cwrpg-datasheets-9879.pdf | TO-261-4, TO-261AA | 18 Weeks | 800V | 2.1W Tc | N-Channel | 200pF @ 25V | 21.6 Ω @ 150mA, 10V | 5V @ 250μA | 300mA Ta | 6nC @ 10V | 10V | ±30V |
