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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PSMN7R5-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn7r530yldx-datasheets-8567.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | YES | SINGLE | GULL WING | 4 | 1 | 1 | 7.1 ns | 10.4ns | 5.5 ns | 8.5 ns | 51A | 2.2V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34W Tc | MO-235 | 202A | 0.0075Ohm | 27.6 mJ | 30V | N-Channel | 655pF @ 15V | 7.5m Ω @ 15A, 10V | 2.2V @ 1mA | 51A Tj | 11.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf33n60m2-datasheets-4194.pdf | TO-220-3 | Lead Free | 16 Weeks | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STP33N | 1 | Single | 190W | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | 190W Tc | 600V | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg4435sss13-datasheets-8576.pdf&product=diodesincorporated-dmg4435sss13-6833440 | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 16 Weeks | 73.992255mg | No SVHC | 20mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8.6 ns | 12.7ns | 22.8 ns | 44.9 ns | 7.3A | 25V | SILICON | SWITCHING | 30V | 30V | -1.7V | 2.5W Ta | P-Channel | 1614pF @ 15V | 16m Ω @ 11A, 20V | 2.5V @ 250μA | 7.3A Ta | 35.4nC @ 10V | 5V 20V | ±25V | ||||||||||||||||||||||||||||||||||||
| BUK7Y59-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y5960ex-datasheets-8590.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 1 | 3.8 ns | 5.5ns | 5.2 ns | 6.5 ns | 17A | 20V | 60V | SILICON | DRAIN | SWITCHING | 37W Tc | MO-235 | 67A | 0.059Ohm | 8.8 mJ | 60V | N-Channel | 494pF @ 25V | 59m Ω @ 5A, 10V | 4V @ 1mA | 17A Tc | 7.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA429DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia429djtt1ge3-datasheets-8609.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N3 | 22 ns | 25ns | 25 ns | 70 ns | 10.6A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 30A | 0.0205Ohm | -20V | P-Channel | 1750pF @ 10V | -400 mV | 20.5m Ω @ 6A, 4.5V | 1V @ 250μA | 12A Tc | 62nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IPN70R1K4P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r1k4p7satma1-datasheets-8628.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 6.2W Tc | N-Channel | 158pF @ 400V | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 4A Tc | 4.7nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS5U13TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2A | SOT-23-5 Thin, TSOT-23-5 | Lead Free | 5 | 20 Weeks | 5 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | DUAL | GULL WING | 260 | 5 | Single | 10 | 900mW | 1 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 2A | 12V | SILICON | SWITCHING | 1.25W Ta | 2A | 30V | N-Channel | 175pF @ 10V | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 2A Ta | 3.9nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9M42-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m4260ex-datasheets-8499.pdf | SOT-1210, 8-LFPAK33 | 26 Weeks | LFPAK33 | 867pF | 22A | 60V | 44W Tc | 30mOhm | N-Channel | 867pF @ 25V | 37mOhm @ 5A, 10V | 2.1V @ 1mA | 22A Tc | 8.3nC @ 5V | 37 mΩ | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB457EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib457edkt1ge3-datasheets-8372.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 14 Weeks | 95.991485mg | Unknown | 35mOhm | 6 | yes | EAR99 | Tin | DUAL | NO LEAD | 260 | 6 | 1 | Single | 40 | 2.4W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 340 ns | 900ns | 1.9 μs | 3 μs | -9A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | -1V | 2.4W Ta 13W Tc | 9A | 25A | P-Channel | 35m Ω @ 4.8A, 4.5V | 1V @ 250μA | 9A Tc | 44nC @ 8V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| STP10NK80ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk80z-datasheets-1153.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 900mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 40W | 1 | FET General Purpose Power | 30 ns | 20ns | 17 ns | 65 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 40W Tc | TO-220AB | 9A | 290 mJ | 800V | N-Channel | 2180pF @ 25V | 900m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FDG315N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdg315n-datasheets-8376.pdf | 30V | 2A | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 120MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 750mW | 1 | FET General Purpose Power | 3 ns | 11ns | 11 ns | 7 ns | 2A | 20V | 30V | SILICON | SWITCHING | 1.8V | 750mW Ta | 2A | 30V | N-Channel | 220pF @ 15V | 1.8 V | 120m Ω @ 2A, 10V | 3V @ 250μA | 2A Ta | 4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NVTFS4C13NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs4c13ntag-datasheets-8384.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | S-PDSO-F5 | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 26W Tc | 40A | 152A | 0.0094Ohm | 10 mJ | 30V | N-Channel | 770pF @ 15V | 9.4m Ω @ 30A, 10V | 2.1V @ 250μA | 14A Ta | 15.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3.7W | 1 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 4V | 43W Tc | 1.2Ohm | P-Channel | 200pF @ 25V | 4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R5-30YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn9r530ylc115-datasheets-8403.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 34W | 1 | 13 ns | 8.8ns | 4.7 ns | 15 ns | 44A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34W Tc | MO-235 | 9 mJ | 30V | N-Channel | 681pF @ 15V | 9.8m Ω @ 15A, 10V | 1.95V @ 1mA | 44A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AON2408 | Alpha & Omega Semiconductor Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 18 Weeks | 6 | No | 2.8W | 1 | 8A | 12V | 20V | 2.8W Ta | N-Channel | 782pF @ 10V | 14.5m Ω @ 8A, 4.5V | 1.2V @ 250μA | 8A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN013-30MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01330mlc115-datasheets-8274.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | No | e3 | Tin (Sn) | IEC-60134 | YES | SINGLE | GULL WING | 8 | 38W | 1 | R-PSSO-G4 | 7 ns | 9.8ns | 5.5 ns | 9.6 ns | 39A | 1.95V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 38W Tc | 157A | 0.0169Ohm | 5.6 mJ | 27V | N-Channel | 519pF @ 15V | 13.6m Ω @ 10A, 10V | 1.95V @ 1mA | 39A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDG327N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg327n-datasheets-8358.pdf | 20V | 1.5A | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 90mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 420mW | 1 | FET General Purpose Power | 6 ns | 6.5ns | 6.5 ns | 14 ns | 1.5A | 8V | SILICON | SWITCHING | 700mV | 420mW Ta | 20V | 20V | N-Channel | 423pF @ 10V | 700 mV | 90m Ω @ 1.5A, 4.5V | 1.5V @ 250μA | 1.5A Ta | 6.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| STL33N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl33n60dm6-datasheets-7743.pdf | 8-PowerVDFN | 12 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 150W Tc | N-Channel | 1500pF @ 100V | 140m Ω @ 10.5A, 10V | 4.75V @ 250μA | 21A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6D43-60EX | Nexperia USA Inc. | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d4360ex-datasheets-8287.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | DUAL | NO LEAD | 260 | 6 | 30 | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 15W Tc | 13A | 52A | 0.043Ohm | 24 mJ | N-Channel | 590pF @ 30V | 43m Ω @ 5A, 10V | 2.7V @ 250μA | 5A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP220N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/stmicroelectronics-stp220n6f7-datasheets-8458.pdf | TO-220-3 | 22 Weeks | EAR99 | NOT SPECIFIED | STP220 | NOT SPECIFIED | 120A | 60V | 237W Tc | N-Channel | 6400pF @ 25V | 2m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW7N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw7n105k5-datasheets-8468.pdf | TO-247-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW7N | NOT SPECIFIED | FET General Purpose Power | 4A | Single | 1050V | 110W Tc | 4A | N-Channel | 380pF @ 100V | 2 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4925NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntmfs4925nt1g-datasheets-8471.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 23.2W | 1 | FET General Purpose Power | Not Qualified | 9.5 ns | 32.7ns | 6.2 ns | 16.4 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 23.2W Tc | 9.7A | 30V | N-Channel | 1264pF @ 15V | 5.6m Ω @ 30A, 10V | 2.2V @ 250μA | 9.7A Ta 48A Tc | 21.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PHB45NQ10T,118 | Nexperia USA Inc. | $4.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb45nq10t118-datasheets-7143.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | TO-220AB | 47A | 188A | 0.025Ohm | 260 mJ | N-Channel | 2600pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60AE-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siha22n60aee3-datasheets-8328.pdf | TO-220-3 Full Pack | 18 Weeks | 600V | 33W Tc | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2021UFDE-7 | Diodes Incorporated | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2021ufde7-datasheets-8283.pdf | 6-UDFN Exposed Pad | 16 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 1.9W Ta | P-Channel | 2760pF @ 15V | 16m Ω @ 7A, 4.5V | 1V @ 250μA | 11.1A Ta | 59nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB55ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmpb55eneax-datasheets-8294.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | AEC-Q101; IEC-60134 | YES | DUAL | NO LEAD | 6 | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.65W Ta | 4A | 16A | 0.056Ohm | N-Channel | 435pF @ 30V | 56m Ω @ 10A, 10V | 2.7V @ 250μA | 4A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK20S60L | Alpha & Omega Semiconductor Inc. | $5.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 16 Weeks | 1 | 20A | 30V | 600V | 266W Tc | N-Channel | 1038pF @ 100V | 199m Ω @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP165N10F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp165n10f4-datasheets-8200.pdf | TO-220-3 | Lead Free | 3 | 20 Weeks | 5.5MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP165 | 3 | Single | 315W | 1 | FET General Purpose Power | R-PSFM-T3 | 29.6 ns | 62ns | 106 ns | 154 ns | 120A | 20V | SILICON | SWITCHING | 315W Tc | TO-220AB | 480A | 100V | N-Channel | 10500pF @ 25V | 5.5m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n95k5-datasheets-5012.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 1.25Ohm | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | SINGLE | STW6N | 3 | 90W | 1 | FET General Purpose Power | R-PSFM-T3 | 12 ns | 12ns | 21 ns | 33 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 90W Tc | 9A | 36A | 90 mJ | 950V | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 9A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHD4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd4n80ege3-datasheets-8208.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | D-PAK (TO-252AA) | 800V | 69W Tc | 1.1Ohm | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V |
