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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RUC002N05T116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 200mW Ta | 0.2A | 2.4Ohm | N-Channel | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| VS-FC270SA20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfc270sa20-datasheets-0697.pdf | SOT-227-4, miniBLOC | 20 Weeks | SOT-227 | 200V | 937W Tc | N-Channel | 16500pF @ 100V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 287A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2372DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2372dst1ge3-datasheets-0645.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 13 Weeks | 43mOhm | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 960mW Ta 1.7W Tc | TO-236AB | 5.3A | N-Channel | 288pF @ 15V | 33m Ω @ 3A, 10V | 2.5V @ 250μA | 4A Ta 5.3A Tc | 8.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J35AFS,LF | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SC-75, SOT-416 | 3 | 12 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 150mW Ta | 0.25A | 0.0021Ohm | P-Channel | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K44MFV,L3F | Toshiba Semiconductor and Storage | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-723 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 150mW Ta | N-Channel | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 98MOhm | 3 | No | e3 | Matte Tin (Sn) - annealed | STF35N | 3 | Single | 40W | 1 | FET General Purpose Power | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IPW60R037CSFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 18 Weeks | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4494 | Alpha & Omega Semiconductor Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 18A | 30V | 3.1W Ta | N-Channel | 1900pF @ 15V | 6.5m Ω @ 18A, 10V | 2.5V @ 250μA | 18A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK49N65W5,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCQ4822-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microcommercialco-mcq4822tp-datasheets-0428.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 22 Weeks | YES | DUAL | GULL WING | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | 1.4W Ta | 30A | 0.016Ohm | N-Channel | 1250pF @ 15V | 30ns | 14ns | 26m Ω @ 6A, 4.5V | 3V @ 250μA | 8.5A Ta | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7403 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon7403-datasheets-9395.pdf | 8-PowerVDFN | 5 | 16 Weeks | 8 | EAR99 | DUAL | FLAT | 8 | 25W | 1 | Other Transistors | Not Qualified | S-PDSO-F5 | 29A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 25W Tc | P-Channel | 1400pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 250μA | 11A Ta 29A Tc | 24nC @ 15V | 5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| NX138BKWX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bkwx-datasheets-0436.pdf | SC-70, SOT-323 | 3 | 4 Weeks | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 266mW Ta 1.33W Tc | 0.21A | N-Channel | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 210mA Ta | 0.7nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K72CFS,LF | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-75, SOT-416 | 12 Weeks | 170mA | 60V | 150mW Ta | N-Channel | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J206FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6j206fete85lf-datasheets-0459.pdf | SOT-563, SOT-666 | 6 | No | Single | 500mW | Other Transistors | 2A | 8V | 20V | 500mW Ta | 2A | -20V | P-Channel | 335pF @ 10V | 130m Ω @ 1A, 4V | 1V @ 1mA | 2A Ta | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7401 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-PowerVDFN | 16 Weeks | 8 | No | 29W | 1 | Other Transistors | 35A | 25V | Single | 30V | 3.1W Ta 29W Tc | P-Channel | 2600pF @ 15V | 14m Ω @ 9A, 10V | 3V @ 250μA | 12A Ta 35A Tc | 39nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2015UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2015ufde7-datasheets-0471.pdf | 6-PowerUDFN | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 6 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1 | 40 | 1 | FET General Purpose Power | R-PDSO-N3 | 7.4 ns | 16.8ns | 10.9 ns | 43.6 ns | 10.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 660mW Ta | 9.4A | 20V | N-Channel | 1779pF @ 10V | 11.6m Ω @ 8.5A, 4.5V | 1.1V @ 250μA | 10.5A Ta | 45.6nC @ 10V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| NX138BKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bkr-datasheets-0485.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 265mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 310mW Ta | TO-236AB | 0.265A | 3.8Ohm | N-Channel | 20.2pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 265mA Ta | 0.49nC @ 4.5V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2033UCB9-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/diodesincorporated-dmp2033ucb97-datasheets-0508.pdf | 9-UFBGA, WLBGA | 7 Weeks | No SVHC | 9 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 1 | NOT SPECIFIED | Other Transistors | 8.5 ns | 11.8ns | 56 ns | 47 ns | 4.2A | -6V | Single | 20V | 1W Ta | 5.8A | -20V | P-Channel | 500pF @ 10V | 33m Ω @ 2A, 4.5V | 1.1V @ 250μA | 4.2A Ta | 7nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3016SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dms3016sfg7-datasheets-0540.pdf | 8-PowerVDFN | 5 | No SVHC | 8 | no | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 8 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 980mW Ta | 7A | 0.013Ohm | N-Channel | 1886pF @ 15V | 13m Ω @ 11.2A, 10V | 2.2V @ 250μA | 7A Ta | 44.6nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| 2N7002-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 7.5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | 15A | e3 | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 200mW | 1 | FET General Purpose Powers | 150°C | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||
| NX7002BKMYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bkmyl-datasheets-0570.pdf | SC-101, SOT-883 | 3 | 8 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 350mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 350mW Ta 3.1W Tc | 0.35A | 3.2Ohm | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 350mA Ta | 1nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J35AMFV,L3F | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-723 | 12 Weeks | 20V | 150mW Ta | P-Channel | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU1J002YNTCL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-ru1j002yntcl-datasheets-0439.pdf | SC-85 | 1.05mm | Lead Free | 3 | 16 Weeks | 85 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 150mW | 1 | 150°C | R-PDSO-F3 | 5 ns | 17 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150mW Ta | 0.2A | 2.8Ohm | 50V | N-Channel | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 200mA Ta | 0.9V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| NX7002BKMBYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bkmbyl-datasheets-0595.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | LOGIC LEVEL COMPATIBLE | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 350mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 350mW Ta 3.1W Tc | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 350mA Ta | 1nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1022UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp1022ufde7-datasheets-0258.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 6 | 2 | Single | 40 | 2.03W | 1 | Other Transistors | S-PDSO-N3 | 20 ns | 28ns | 93 ns | 117 ns | 9.1A | 8V | SILICON | DRAIN | SWITCHING | 12V | 660mW Ta | P-Channel | 2953pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 9.1A Ta | 42.6nC @ 5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| RSL020P03TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-rsl020p03tr-datasheets-0416.pdf | 6-SMD, Flat Leads | 6 | 20 Weeks | 6 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 1W | 1 | Other Transistors | 11 ns | 11ns | 11 ns | 35 ns | 2A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1W Ta | 2A | 0.12Ohm | -30V | P-Channel | 350pF @ 10V | 120m Ω @ 2A, 10V | 2A Ta | 3.9nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STW30NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm60n-datasheets-0310.pdf | TO-247-3 | Lead Free | 3 | 130mOhm | unknown | e3 | TIN | NOT SPECIFIED | STW30N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24ns | 70 ns | 125 ns | 25A | 30V | SILICON | SWITCHING | 190W Tc | TO-247AC | 900 mJ | 600V | N-Channel | 2700pF @ 50V | 130m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 91nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| PMN55ENEH | Nexperia USA Inc. | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn55enex-datasheets-0916.pdf | SC-74, SOT-457 | 4 Weeks | 60V | 560mW Ta 6.25mW Tc | N-Channel | 646pF @ 30V | 60m Ω @ 3.4A, 10V | 2.7V @ 250μA | 4.5A Ta | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3134K-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microcommercialco-si3134ktp-datasheets-0319.pdf | SOT-723 | 22 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW Ta | N-Channel | 120pF @ 16V | 800m Ω @ 450mA, 1.8V | 1V @ 250μA | 750mA | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg4812sss13-datasheets-0346.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1 | FET General Purpose Powers | Not Qualified | 6.62 ns | 8.73ns | 4.69 ns | 36.41 ns | 8A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.54W Ta | 8A | 45A | 0.015Ohm | N-Channel | 1849pF @ 15V | 15m Ω @ 10.7A, 10V | 2.3V @ 250μA | 8A Ta | 18.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V |
