Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STW60NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw60nm50n-datasheets-0126.pdf | TO-247-3 | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW60N | Single | NOT SPECIFIED | 446W | 1 | R-PSFM-T3 | 36ns | 27.5 ns | 40 ns | 68A | 25V | SILICON | SWITCHING | 446W Tc | 272A | 0.043Ohm | 551 mJ | 500V | N-Channel | 5790pF @ 100V | 43m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 178nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 1.437803g | Unknown | 2Ohm | 3 | No | 1 | Single | 350mW | 1 | 150°C | SOT-23-3 (TO-236) | 30pF | 25 ns | 35 ns | 300mA | 20V | 60V | 2.5V | 350mW Ta | 2Ohm | 60V | N-Channel | 30pF @ 25V | 2 V | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 2 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STY100NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sty100nm60n-datasheets-0137.pdf | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 12 Weeks | 247 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STY100 | Single | 625W | 1 | 45 ns | 52ns | 81 ns | 372 ns | 98A | 25V | 625W Tc | 600V | N-Channel | 9600pF @ 50V | 29m Ω @ 49A, 10V | 4V @ 250μA | 98A Tc | 330nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SCT3040KLHRC11 | ROHM Semiconductor | $79.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3040klhrc11-datasheets-0141.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 262W | N-Channel | 1337pF @ 800V | 52m Ω @ 20A, 18V | 5.6V @ 10mA | 55A Ta | 107nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA76N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fca76n60n-datasheets-0147.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 12 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 543W | 1 | FET General Purpose Power | 34 ns | 24ns | 32 ns | 235 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 2V | 543W Tc | 228A | 8022 mJ | 600V | N-Channel | 12385pF @ 100V | 36m Ω @ 38A, 10V | 4V @ 250μA | 76A Tc | 285nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SCT3080ALHRC11 | ROHM Semiconductor | $39.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3080alhrc11-datasheets-0155.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 134W | N-Channel | 571pF @ 500V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 30A Tc | 48nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3030ALHRC11 | ROHM Semiconductor | $45.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3030alhrc11-datasheets-0161.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 262W | N-Channel | 1526pF @ 500V | 39m Ω @ 27A, 18V | 5.6V @ 13.3mA | 70A Tc | 104nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL027N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthl027n65s3hf-datasheets-0167.pdf | TO-247-3 Variant | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 595W Tc | N-Channel | 7630pF @ 400V | 27.4m Ω @ 35A, 10V | 5V @ 3mA | 75A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG039N60E-GE3 | Vishay Siliconix | $7.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60ege3-datasheets-0082.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4369pF @ 100V | 39mOhm @ 32A, 10V | 5V @ 250μA | 63A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3030ARC14 | ROHM Semiconductor | $41.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3030arc14-datasheets-0170.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 262W | 70A | 175A | 0.039Ohm | N-Channel | 1526pF @ 500V | 39m Ω @ 27A, 18V | 5.6V @ 13.3mA | 70A Tc | 104nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TP65H050WSQA | Transphorm | $15.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/transphorm-tp65h050wsqa-datasheets-0085.pdf | TO-247-3 | 650V | 150W Tc | N-Channel | 1000pF @ 400V | 60m Ω @ 25A, 10V | 4.8V @ 700μA | 36A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW60N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw60n65m5-datasheets-0010.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 3 | No SVHC | 59MOhm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STFW | 3 | Single | 79W | 1 | FET General Purpose Power | 90 ns | 11ns | 16 ns | 13 ns | 46A | 25V | SILICON | SWITCHING | 4V | 79W Tc | 650V | N-Channel | 6810pF @ 100V | 59m Ω @ 23A, 10V | 5V @ 250μA | 46A Tc | 139nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STWA48N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stwa48n60m2-datasheets-0088.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STWA48 | NOT SPECIFIED | 42A | 600V | 300W Tc | N-Channel | 3060pF @ 100V | 70m Ω @ 21A, 10V | 4V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3105KLHRC11 | ROHM Semiconductor | $19.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3105klhrc11-datasheets-0094.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 134W | N-Channel | 574pF @ 800V | 137m Ω @ 7.6A, 18V | 5.6V @ 3.81mA | 24A Tc | 51nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65EFL4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch041n65efl4-datasheets-9261.pdf | TO-247-4 | 12 Weeks | 6.289g | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 76A | 650V | 595W Tc | N-Channel | 12560pF @ 100V | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 76A Tc | 298nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK49N65W,S1F | Toshiba Semiconductor and Storage | $9.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N60F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch041n60ff085-datasheets-0040.pdf | TO-247-3 | 6.39g | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 76A | 600V | 595W Tc | N-Channel | 10900pF @ 25V | 41m Ω @ 38A, 10V | 5V @ 250μA | 76A Tc | 347nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3080ARC14 | ROHM Semiconductor | $17.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sct3080arc14-datasheets-0052.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON CARBIDE | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 134W | 30A | 75A | 0.104Ohm | N-Channel | 571pF @ 500V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 30A Tc | 48nC @ 18V | 18V | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STY60NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sty60nm60-datasheets-0055.pdf | 600V | 60A | TO-247-3 | 5.9mm | 20.3mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Tin (Sn) | STY60N | 3 | Single | 560W | 1 | FET General Purpose Power | 55 ns | 95ns | 76 ns | 55 ns | 60A | 30V | SILICON | SWITCHING | 4V | 560W Tc | 240A | 0.055Ohm | 600V | N-Channel | 7300pF @ 25V | 55m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 266nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IMW120R090M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r090m1hxksa1-datasheets-0059.pdf | TO-247-3 | 20 Weeks | 1.2kV | 115W Tc | N-Channel | 707pF @ 800V | 117m Ω @ 8.5A, 18V | 5.7V @ 3.7mA | 26A Tc | 21nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3105KLGC11 | ROHM Semiconductor | $25.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3105klgc11-datasheets-0061.pdf | TO-247-3 | 21 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 134W | N-Channel | 574pF @ 800V | 137m Ω @ 7.6A, 18V | 5.6V @ 3.81mA | 24A Tc | 51nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R055CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 178W Tc | N-Channel | 3194pF @ 400V | 55m Ω @ 18A, 10V | 4.5V @ 900μA | 38A Tc | 79nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3060ALHRC11 | ROHM Semiconductor | $50.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3060alhrc11-datasheets-0068.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 165W | N-Channel | 852pF @ 500V | 78m Ω @ 13A, 18V | 5.6V @ 6.67mA | 39A Tc | 58nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW32N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp32n65m5-datasheets-9831.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 119MOhm | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Tin (Sn) | STW32N | 3 | Single | 150W | 1 | FET General Purpose Power | 53 ns | 12ns | 16 ns | 53 ns | 24A | 25V | SILICON | SWITCHING | 150W Tc | 96A | 650 mJ | 650V | N-Channel | 3320pF @ 100V | 119m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 72nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| SIHW70N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw70n60efge3-datasheets-0074.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 520W Tc | TO-247AD | 229A | 0.038Ohm | 1706 mJ | N-Channel | 7500pF @ 100V | 38m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 380nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| R6042JNZ4C13 | ROHM Semiconductor | $9.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6042jnz4c13-datasheets-0008.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 495W Tc | N-Channel | 3500pF @ 100V | 104m Ω @ 21A, 15V | 7V @ 5.5mA | 42A Tc | 100nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3105KRC14 | ROHM Semiconductor | $17.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3105krc14-datasheets-0078.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 134W | 24A | 60A | 0.137Ohm | N-Channel | 574pF @ 800V | 137m Ω @ 7.6A, 18V | 5.6V @ 3.81mA | 24A Tc | 51nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STW60N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw60n65m5-datasheets-0010.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 59MOhm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STW60N | 3 | Single | 255W | 1 | FET General Purpose Power | 90 ns | 11ns | 16 ns | 13 ns | 46A | 25V | SILICON | SWITCHING | 4V | 255W Tc | 650V | N-Channel | 6810pF @ 100V | 59m Ω @ 23A, 10V | 5V @ 250μA | 46A Tc | 139nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STW78N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw78n65m5-datasheets-0012.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STW78N | Single | 450W | 1 | FET General Purpose Power | 163 ns | 14ns | 14 ns | 26 ns | 69A | 25V | SILICON | SWITCHING | 450W Tc | 276A | 2000 mJ | 650V | N-Channel | 9000pF @ 100V | 32m Ω @ 34.5A, 10V | 5V @ 250μA | 69A Tc | 203nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SCT3120ALHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3120alhrc11-datasheets-0017.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 103W | N-Channel | 460pF @ 500V | 156m Ω @ 6.7A, 18V | 5.6V @ 3.33mA | 21A Tc | 38nC @ 18V | 18V | +22V, -4V |
