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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IMW120R090M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r090m1hxksa1-datasheets-0059.pdf | TO-247-3 | 20 Weeks | 1.2kV | 115W Tc | N-Channel | 707pF @ 800V | 117m Ω @ 8.5A, 18V | 5.7V @ 3.7mA | 26A Tc | 21nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3105KLGC11 | ROHM Semiconductor | $25.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3105klgc11-datasheets-0061.pdf | TO-247-3 | 21 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 134W | N-Channel | 574pF @ 800V | 137m Ω @ 7.6A, 18V | 5.6V @ 3.81mA | 24A Tc | 51nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMZ120R140M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r140m1hxksa1-datasheets-9998.pdf | TO-247-4 | 20 Weeks | 1.2kV | 94W Tc | N-Channel | 454pF @ 800V | 182m Ω @ 6A, 18V | 5.7V @ 2.5mA | 19A Tc | 13nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMZ120R220M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r220m1hxksa1-datasheets-9924.pdf | TO-247-4 | 20 Weeks | 1.2kV | 75W Tc | N-Channel | 289pF @ 800V | 220m Ω @ 4A, 18V | 5.7V @ 1.6mA | 13A Tc | 8.5nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY60NK30Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sty60nk30z-datasheets-0000.pdf | 300V | 60A | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 3 | No SVHC | 247 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STY60N | 3 | Single | 450W | 1 | FET General Purpose Power | R-PSIP-T3 | 50 ns | 90ns | 60 ns | 150 ns | 60A | 30V | SILICON | SWITCHING | 3.75V | 450W Tc | 240A | 0.045Ohm | 700 mJ | 300V | N-Channel | 7200pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 100μA | 60A Tc | 220nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| FQL40N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fql40n50-datasheets-9926.pdf | 500V | 40A | TO-264-3, TO-264AA | 20mm | 26mm | 5mm | Lead Free | 3 | 15 Weeks | 6.756g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 460W | 1 | FET General Purpose Power | 140 ns | 440ns | 250 ns | 350 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 460W Tc | 500V | N-Channel | 7500pF @ 25V | 110m Ω @ 20A, 10V | 5V @ 250μA | 40A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STFI40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf40n60m2-datasheets-9731.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.8mm | 4.6mm | 2.240009g | 3 | EAR99 | No | STFI40N | 1 | Single | 20.5 ns | 13.5ns | 11 ns | 96 ns | 34A | 25V | 600V | 40W Tc | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| FCH47N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fch47n60n-datasheets-9937.pdf | TO-247-3 | 15.95mm | 21mm | 5.03mm | 3 | 15 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | FCH47N60 | Single | NOT SPECIFIED | 368W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 9ns | 22 ns | 135 ns | 47A | 30V | SILICON | SWITCHING | 2V | 368W Tc | 0.062Ohm | 600V | N-Channel | 6700pF @ 100V | 62m Ω @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| NVHL040N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® III, FRFET® | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-nvhl040n65s3f-datasheets-9945.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 446W Tc | N-Channel | 5875pF @ 400V | 40m Ω @ 32.5A, 10V | 5V @ 2.1mA | 65A Tc | 153nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW75NF30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw75nf30-datasheets-9231.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 45mOhm | 3 | EAR99 | Tin | No | e3 | STW75N | 3 | Single | 320W | 1 | FET General Purpose Power | 115 ns | 87ns | 101 ns | 141 ns | 60A | 20V | SILICON | SWITCHING | 3V | 320W Tc | TO-247AD | 240A | 300V | N-Channel | 5930pF @ 25V | 45m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 164nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTHL040N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthl040n65s3hf-datasheets-9956.pdf | TO-247-3 Variant | 15 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 446W Tc | N-Channel | 5945pF @ 400V | 40m Ω @ 32.5A, 10V | 5V @ 2.1mA | 65A Tc | 159nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH072N60F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch072n60ff085-datasheets-9960.pdf | TO-247-3 | 6.39g | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 52A | 600V | 481W Tc | N-Channel | 6330pF @ 100V | 72m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stwa57n65m5-datasheets-9970.pdf | TO-247-3 | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STWA57 | Single | 250W | 73 ns | 15ns | 12 ns | 19 ns | 42A | 25V | 250W Tc | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R190CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r190cexksa1-datasheets-9974.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 127W | 1 | FET General Purpose Power | 9.5 ns | 8.5ns | 7.5 ns | 54 ns | 18.5A | 20V | 500V | SILICON | SWITCHING | 127W Tc | TO-220AB | 0.19Ohm | 550V | N-Channel | 1137pF @ 100V | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||
| STW34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 110mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW34N | Single | 190W | 1 | 59 ns | 59 ns | 28A | 25V | SILICON | SWITCHING | 190W Tc | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| SIHG039N60EF-GE3 | Vishay Siliconix | $10.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60efge3-datasheets-9983.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4323pF @ 100V | 40mOhm @ 32A, 10V | 5V @ 250μA | 61A Tc | 126nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb57n65m5-datasheets-5392.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STI57N | Single | 250W | 1 | 73 ns | 15ns | 12 ns | 19 ns | 42A | 25V | SILICON | DRAIN | SWITCHING | 250W Tc | 168A | 960 mJ | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| NVHL027N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® III, FRFET® | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-nvhl027n65s3f-datasheets-9990.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 595W Tc | N-Channel | 7780pF @ 400V | 27.4m Ω @ 35A, 10V | 5V @ 3mA | 75A Tc | 227nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMZ120R090M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r090m1hxksa1-datasheets-9996.pdf | TO-247-4 | 20 Weeks | 1.2kV | 115W Tc | N-Channel | 707pF @ 800V | 117m Ω @ 8.5A, 18V | 5.7V @ 3.7mA | 26A Tc | 21nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 98MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW35N | 3 | Single | 160W | 1 | FET General Purpose Power | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 160W Tc | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| STF28NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf28nm60nd-datasheets-9215.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 329.988449mg | 3 | EAR99 | No | STF28 | 1 | Single | 1 | 23.5 ns | 21.5ns | 27 ns | 92 ns | 23A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 35W Tc | TO-220AB | 92A | 50 mJ | 650V | N-Channel | 2090pF @ 100V | 150m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STP34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 110mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP34N | Single | 190W | 1 | 59 ns | 59 ns | 28A | 25V | SILICON | SWITCHING | 190W Tc | TO-220AB | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IMW120R350M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r350m1hxksa1-datasheets-9859.pdf | TO-247-3 | 16 Weeks | 1.2kV | 60W Tc | N-Channel | 182pF @ 800V | 455m Ω @ 2A, 18V | 5.7V @ 1mA | 4.7A Tc | 5.3nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n65efge3-datasheets-9861.pdf | TO-247-3 | 3 | 21 Weeks | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 31.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 4V | 313W Tc | TO-247AC | 0.109Ohm | 508 mJ | N-Channel | 4026pF @ 100V | 109m Ω @ 16.5A, 10V | 4V @ 250μA | 31.6A Tc | 171nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHF065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf065n60ege3-datasheets-9868.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL040N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nthl040n65s3f-datasheets-9870.pdf | TO-247-3 | 12 Weeks | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 446W Tc | N-Channel | 5940pF @ 400V | 40m Ω @ 32.5A, 10V | 5V @ 6.5mA | 65A Tc | 158nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA90N20X3 | IXYS | $4.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa90n20x3-datasheets-9879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW30NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm50n-datasheets-9882.pdf | TO-247-3 | Lead Free | 3 | No SVHC | 115mOhm | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW30N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | 20ns | 60 ns | 115 ns | 13.5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 190W Tc | TO-247AC | 27A | 108A | 900 mJ | 500V | N-Channel | 2740pF @ 50V | 115m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 94nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| PSMN015-100P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn015100p127-datasheets-9884.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 240A | 0.015Ohm | N-Channel | 4900pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPW60R090CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 125W Tc | N-Channel | 2103pF @ 400V | 90m Ω @ 11.4A, 10V | 4.5V @ 570μA | 25A Tc | 51nC @ 10V | 10V | ±20V |
