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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STW35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 98MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW35N | 3 | Single | 160W | 1 | FET General Purpose Power | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 160W Tc | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STF28NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf28nm60nd-datasheets-9215.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 329.988449mg | 3 | EAR99 | No | STF28 | 1 | Single | 1 | 23.5 ns | 21.5ns | 27 ns | 92 ns | 23A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 35W Tc | TO-220AB | 92A | 50 mJ | 650V | N-Channel | 2090pF @ 100V | 150m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STP34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 110mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP34N | Single | 190W | 1 | 59 ns | 59 ns | 28A | 25V | SILICON | SWITCHING | 190W Tc | TO-220AB | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| IMW120R350M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r350m1hxksa1-datasheets-9859.pdf | TO-247-3 | 16 Weeks | 1.2kV | 60W Tc | N-Channel | 182pF @ 800V | 455m Ω @ 2A, 18V | 5.7V @ 1mA | 4.7A Tc | 5.3nC @ 18V | 15V 18V | +23V, -7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n65efge3-datasheets-9861.pdf | TO-247-3 | 3 | 21 Weeks | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 31.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 4V | 313W Tc | TO-247AC | 0.109Ohm | 508 mJ | N-Channel | 4026pF @ 100V | 109m Ω @ 16.5A, 10V | 4V @ 250μA | 31.6A Tc | 171nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf065n60ege3-datasheets-9868.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD4NK80Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk80zt4-datasheets-3909.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | 260 | STD4N | 3 | Single | 30 | 80W | 1 | FET General Purpose Power | 13 ns | 12ns | 32 ns | 35 ns | 3A | 30V | SILICON | SWITCHING | 80W Tc | 3A | 800V | N-Channel | 575pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPP034N03LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp034n03lgxksa1-datasheets-9817.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | 9.2 ns | 6.4ns | 5.4 ns | 35 ns | 80A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 94W Tc | TO-220AB | 400A | 0.0047Ohm | 70 mJ | N-Channel | 5300pF @ 15V | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 80A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHG35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg35n60efge3-datasheets-9823.pdf | TO-247-3 | 21 Weeks | TO-247AC | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI6N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu6n65k3-datasheets-4448.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI6N | Single | 30W | 14 ns | 10ns | 24 ns | 44 ns | 5.4A | 30V | 30W Tc | 650V | N-Channel | 880pF @ 50V | 1.3 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020JNZ4C13 | ROHM Semiconductor | $9.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020jnz4c13-datasheets-9829.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 252W Tc | N-Channel | 1500pF @ 100V | 234m Ω @ 10A, 15V | 7V @ 3.5mA | 20A Tc | 45nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP32N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp32n65m5-datasheets-9831.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 119MOhm | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | STP32N | 3 | Single | 150W | 1 | FET General Purpose Power | 53 ns | 12ns | 16 ns | 53 ns | 24A | 25V | SILICON | SWITCHING | 4V | 150W Tc | TO-220AB | 96A | 650 mJ | 650V | N-Channel | 3320pF @ 100V | 119m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 72nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| SIHB065N60E-GE3 | Vishay Siliconix | $6.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb065n60ege3-datasheets-9834.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stwa45n65m5-datasheets-9836.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STWA45 | Single | 210W | 1 | 79.5 ns | 11ns | 9.3 ns | 16 ns | 35A | 25V | SILICON | SWITCHING | 210W Tc | 140A | 0.078Ohm | 810 mJ | 650V | N-Channel | 3470pF @ 100V | 78m Ω @ 17.5A, 10V | 5V @ 250μA | 35A Tc | 82nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHG28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg28n60efge3-datasheets-9841.pdf | TO-247-3 | Lead Free | 3 | 21 Weeks | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-247AC | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPZA60R060P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/infineontechnologies-ipza60r060p7xksa1-datasheets-9846.pdf | TO-247-4 | 4 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 164W Tc | 151A | 0.06Ohm | 159 mJ | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STW28NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 38.000013g | 3 | EAR99 | No | STW28N | 1 | Single | 19W | 1 | 23.5 ns | 21.5ns | 27 ns | 92 ns | 23A | 25V | SILICON | DRAIN | SWITCHING | 600V | 190W Tc | 92A | 50 mJ | 650V | N-Channel | 2090pF @ 100V | 150m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SIHG100N60E-GE3 | Vishay Siliconix | $8.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg100n60ege3-datasheets-9782.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFB20N50K-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 3 | 9 Weeks | yes | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 280W Tc | TO-220AB | 20A | 80A | 0.25Ohm | 330 mJ | N-Channel | 2870pF @ 25V | 250m Ω @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK065N65Z,S1F | Toshiba Semiconductor and Storage | $6.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSVI | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | 650V | 270W Tc | N-Channel | 3650pF @ 300V | 65m Ω @ 19A, 10V | 4V @ 1.69mA | 38A Ta | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp28n65efge3-datasheets-9802.pdf | TO-220-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfpc60pbf-datasheets-9807.pdf | 600V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 1 | Single | 280W | 1 | TO-247-3 | 3.9nF | 19 ns | 54ns | 56 ns | 110 ns | 16A | 20V | 600V | 4V | 280W Tc | 920 ns | 400mOhm | 600V | N-Channel | 3900pF @ 25V | 4 V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 210nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STI30N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti30n65m5-datasheets-9729.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | No SVHC | 3 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | SINGLE | STI30N | 3 | 140W | 1 | FET General Purpose Power | 50 ns | 8ns | 10 ns | 50 ns | 22A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 140W Tc | 88A | 500 mJ | 650V | N-Channel | 2880pF @ 100V | 139m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 64nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| STF40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf40n60m2-datasheets-9731.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | 3 | EAR99 | No | STF40N | 1 | Single | 20.5 ns | 13.5ns | 11 ns | 96 ns | 34A | 25V | 600V | 40W Tc | 650V | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-262-3 Full Pack, I2Pak | 3 | 3 | EAR99 | SINGLE | STI34N | 190W | 1 | 8.7ns | 7.5 ns | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190W Tc | TO-262AA | 112A | 0.11Ohm | 510 mJ | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R090CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipp60r090cfd7xksa1-datasheets-9737.pdf | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 125W Tc | N-Channel | 2103pF @ 400V | 90m Ω @ 11.4A, 10V | 4.5V @ 570μA | 25A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA44N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa44n30-datasheets-9741.pdf | 300V | 43.5A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | 85 ns | 470ns | 230 ns | 240 ns | 43.5A | 30V | SILICON | SWITCHING | 310W Tc | 174A | 0.069Ohm | 1700 mJ | 300V | N-Channel | 5600pF @ 25V | 69m Ω @ 21.75A, 10V | 5V @ 250μA | 43.5A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60efge3-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | Lead Free | 14 Weeks | 38.000013g | Unknown | 3 | Tin | No | 1 | Single | 278W | 1 | TO-247AC | 3.508nF | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | 600V | 2V | 278W Tc | 99mOhm | 600V | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 99 mΩ | 10V | ±30V |
