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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| EGP50D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | Lead Free | 2 | 15 Weeks | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 950mV | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150A | 200V | 50 ns | 50 ns | Standard | 200V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~150°C | ||||||||||||||||
| FGP20BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 50A | 100V | 35 ns | 35 ns | Standard | 100V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 100V | 950mV @ 2A | -65°C~175°C | ||||||||||||||||||||
| EGP30F-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP30F | 2 | Single | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 300V | 125A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 5μA @ 300V | 1.25V @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| EGP30GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.25V @ 3A | -65°C~150°C | |||||||||||||||||||||
| EGP50F-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 20 | No | EGP50F | Single | GP20 | 5A | 1.25V | 150A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 5A | 75pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.25V @ 5A | 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| FGP50DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 135A | 200V | 35 ns | 35 ns | Standard | 200V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~175°C | |||||||||||||||||||
| FGP50BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 135A | 100V | 35 ns | 35 ns | Standard | 100V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~175°C | |||||||||||||||||||
| SBLB8L40HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl8l40e345-datasheets-4660.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | SBLB8L40 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 8A | 1 | 8A | 1mA @ 40V | 500mV @ 8A | -65°C~125°C | |||||||||||||||||||||
| 1N4934GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4934 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 200 ns | 200 ns | Standard | 100V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 100V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||
| EGP10BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10B | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||
| BA159DGPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BA159DG | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 20A | 800V | 500 ns | 500 ns | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||
| BY500-100-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 200A | 100V | 200 ns | 200 ns | Standard | 100V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 100V | 1.35V @ 5A | 125°C Max | |||||||||||||||||||||
| NSB8JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | NSB8J | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | Standard | 600V | 8A | 1 | 8A | 55pF @ 4V 1MHz | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||
| 1N4944GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N4944 | 2 | Single | 1 | Rectifier Diodes | 25A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 25A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| BY500-400-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | BY500-400 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 200A | 400V | 200 ns | 200 ns | Standard | 400V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.35V @ 5A | -50°C~125°C | ||||||||||||||||||||
| SBLF10L30-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl10l30he345-datasheets-4567.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 10A | 200A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 200A | TO-220AC | Schottky | 30V | 10A | 1 | 1mA @ 30V | 520mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||||
| BY448GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by448gpe354-datasheets-5306.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BY448GP | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 40A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.65kV | 40A | 1.65kV | 20 μs | 20 μs | Standard | 1.65kV | 1.5A | 1 | 1650V | 5μA @ 1650V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||
| SBL1030HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl1030e345-datasheets-4591.pdf | TO-220-3 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SBL1030 | 3 | Single | 1 | Rectifier Diodes | 10A | 250A | 1mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 250A | Schottky | 30V | 10A | 1 | 1mA @ 30V | 600mV @ 10A | -40°C~125°C | ||||||||||||||||||||||||||
| 1N5622GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5614gpe373-datasheets-4769.pdf | DO-204AC, DO-15, Axial | 2 | No | 1N5622 | Single | DO-204AC (DO-15) | 1.2V | 50A | Standard Recovery >500ns, > 200mA (Io) | 500nA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| BYD33MGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33M | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1kV | 30A | 1kV | 300 ns | 300 ns | Standard | 1kV | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| SBL8L40HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl8l40e345-datasheets-4660.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 500mV | 250A | 1mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 8A | 1 | 8A | 1mA @ 40V | 500mV @ 8A | -65°C~125°C | |||||||||||||||||||||||||
| BYD33GGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | 2 | No | BYD33G | Single | DO-204AL (DO-41) | 1.3V | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| 1N5399GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5399 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1.5A | 1 | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.4V @ 1.5A | -65°C~175°C | ||||||||||||||||||
| BY251GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by251gpe373-datasheets-2914.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BY251 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 100A | 200V | 3 μs | 3 μs | Standard | 200V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||
| UG12JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 12A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 135A | 50 ns | Standard | 600V | 12A | 1 | 30μA @ 600V | 1.75V @ 12A | 150°C Max | |||||||||||||||||||||||||||
| BA159GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BA159GP | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 20A | 1kV | 500 ns | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||
| BYD13DGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13D | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 30A | 200V | 3 μs | 3 μs | Standard | 200V | 1A | 8pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N5614GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5614gpe373-datasheets-4769.pdf | DO-204AC, DO-15, Axial | No | 1N5614 | Single | DO-204AC (DO-15) | 50A | Standard Recovery >500ns, > 200mA (Io) | 500nA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 45pF @ 12V 1MHz | 200V | 500nA @ 200V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| BYV26EGPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv26egpe354-datasheets-0868.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BYV26EGP | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | 1kV | 75 ns | 75 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 2.5V @ 1A | -65°C~175°C | ||||||||||||||||||
| SBLB10L30HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl10l30he345-datasheets-4567.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | Unknown | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB10L30 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 700mV | 200A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 1mA | 30V | 200A | Schottky | 30V | 10A | 1 | 1mA @ 30V | 520mV @ 10A | -65°C~150°C |
