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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| RS1PGHE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs1pdm384a-datasheets-2346.pdf | DO-220AA | 2 | RS1PG | Single | DO-220AA (SMP) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 150 ns | Standard | 400V | 1A | 9pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| FES8DTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 125A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||
| UH3C-E3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3dhe3ai-datasheets-8505.pdf | DO-214AB, SMC | 2 | 21 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH3C | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 80A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 80A | 150V | 40 ns | 40 ns | Standard | 150V | 3A | 1 | 5μA @ 150V | 1.05V @ 3A | -55°C~175°C | ||||||||||||||||||||||
| BYW29-50HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 100A | 50V | 25 ns | 25 ns | Standard | 50V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 50V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||
| MBR1035HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1035 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||
| ES1AHE3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es1de35at-datasheets-9740.pdf | DO-214AC, SMA | 2 | No | ES1A | Single | DO-214AC (SMA) | 1A | 920mV | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 50V | 30A | 50V | 25 ns | 25 ns | Standard | 50V | 1A | 10pF @ 4V 1MHz | 50V | 5μA @ 50V | 920mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| GURB5H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 245 | 3 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | 90A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | |||||||||||||||||||||
| BYS459-1500-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bys459b1500e345-datasheets-3924.pdf | TO-220-2 | BYS459-1500 | Single | TO-220AC | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 1.5kV | 350 ns | 350 ns | Standard | 1.5kV | 6.5A | 1500V | 250μA @ 1500V | 1.3V @ 6.5A | 6.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR16H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 660mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 45V | 150A | Schottky | 45V | 16A | 1 | 100μA @ 45V | 660mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||
| MBR10H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 630mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||
| MBR7H35HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 50μA @ 35V | 630mV @ 7.5A | -65°C~175°C | |||||||||||||||||||||||||||||
| MBR10H50-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 710mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||
| UH3D-E3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3dhe3ai-datasheets-8505.pdf | DO-214AB, SMC | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH3D | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 80A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 80A | 200V | 40 ns | 40 ns | Standard | 200V | 3A | 1 | 5μA @ 200V | 1.05V @ 3A | -55°C~175°C | |||||||||||||||||||||||
| FES8FTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 125A | 300V | 50 ns | 50 ns | Standard | 300V | 8A | 1 | 8A | 10μA @ 300V | 1.3V @ 8A | -55°C~150°C | |||||||||||||||||||||||||
| MBR10H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 850mV | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||||||
| SS32HE3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | No | SS32 | Single | DO-214AB (SMC) | 3A | 500mV | 100A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 20V | 100A | Schottky | 20V | 3A | 20V | 500μA @ 20V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||
| SS3P5HE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss3p6he384a-datasheets-3740.pdf | DO-220AA | SS3P5 | Single | DO-220AA (SMP) | 45A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 3A | 80pF @ 4V 1MHz | 50V | 100μA @ 50V | 780mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| BY229-200HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 | 2 | No | Single | TO-220AC | 8A | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 100A | 200V | 145 ns | 145 ns | Standard | 200V | 8A | 200V | 10μA @ 200V | 1.85V @ 20A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SS2P5-E3/84A | Vishay Semiconductor Diodes Division | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | DO-220AA | 3.61mm | 1.15mm | 2.18mm | 2 | SS2P5 | Single | DO-220AA (SMP) | 2A | 700mV | 50A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 50A | 100μA | 50V | 50A | Schottky | 50V | 2A | 80pF @ 4V 1MHz | 50V | 100μA @ 50V | 700mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| BY229X-400HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | No | Single | ITO-220AC | 8A | 100A | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 100A | 145 ns | 145 ns | Standard | 400V | 8A | 400V | 10μA @ 400V | 1.85V @ 20A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| FES16GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16G | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 250A | 400V | 50 ns | 50 ns | Standard | 400V | 16A | 1 | 10μA @ 400V | 1.3V @ 16A | -65°C~150°C | |||||||||||||||||||||||||
| MBR1050-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1050 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||||
| FES16DTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16D | 3 | Single | 1 | Rectifier Diodes | 16A | 975mV | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 250A | 200V | 35 ns | 35 ns | Standard | 200V | 16A | 1 | 10μA @ 200V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||
| UH1B-E3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh1bhe3ai-datasheets-6090.pdf | DO-214AC, SMA | 2 | 19 Weeks | 2 | yes | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH1B | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 30A | 100V | 30 ns | 25 ns | Standard | 100V | 1A | 1A | 1μA @ 100V | 1.05V @ 1A | -55°C~175°C | |||||||||||||||||||||||
| MBR1045HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1045 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||||
| FES8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 125A | 50V | 35 ns | 35 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||
| BYS459F-1500E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bys459b1500e345-datasheets-3924.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | BYS459-1500 | Single | ITO-220AC | 1.3V | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 130A | 1.5kV | 350 ns | 350 ns | Standard | 1.5kV | 6.5A | 1500V | 250μA @ 1500V | 1.3V @ 6.5A | 6.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| GURF5H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 90A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||
| BYW29-150HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | BYW29-150 | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 150V | 25 ns | 25 ns | Standard | 150V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||
| SS10PH9HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss10ph9hm386a-datasheets-4106.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | SS10PH9 | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 880mV | 200A | 10μA | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 90V | 200A | TO-277A | Schottky | 90V | 10A | 1 | 270pF @ 4V 1MHz | 10μA @ 90V | 880mV @ 10A | -55°C~175°C |
