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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRF745HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 100μA @ 45V | 840mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||
| MBR1650-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-3 | 2 | yes | EAR99 | No | 8541.10.00.80 | MBR1650 | 3 | Single | 16A | 150A | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 50V | 150A | Schottky | 50V | 16A | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| BY229-800-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 | 2 | No | Single | TO-220AC | 8A | 1.85V | 100A | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 145 ns | 145 ns | Standard | 800V | 8A | 800V | 10μA @ 800V | 1.85V @ 20A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| MBRB750HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB750 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 500μA @ 50V | 750mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||
| MBR7H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 50μA @ 60V | 730mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||
| MBRB1645HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | GULL WING | 245 | MBRB1645 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 150A | Schottky | 45V | 16A | 1 | 200μA @ 45V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||||
| MBRB750-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB750 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 500μA @ 50V | 750mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||
| MBRB735HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB735 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 840mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 100μA @ 35V | 840mV @ 15A | -65°C~150°C | ||||||||||||||||||||
| MBR7H35-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 50μA @ 35V | 630mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||
| BY229X-800HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | No | BY229X-800 | Single | ITO-220AC | 8A | 100A | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 145 ns | 145 ns | Standard | 800V | 8A | 800V | 10μA @ 800V | 1.85V @ 20A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| MBRB10H100HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | MBRB10H100 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 100V | 250A | Schottky | 100V | 10A | 1 | 4.5μA @ 100V | 770mV @ 10A | -65°C~175°C | |||||||||||||||||||
| FES16JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16J | 3 | Single | 1 | Rectifier Diodes | 16A | 1.5V | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 250A | 600V | 50 ns | 50 ns | Standard | 600V | 16A | 1 | 10μA @ 600V | 1.5V @ 16A | -65°C~150°C | |||||||||||||||||||
| MBRB10H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | |||||||||||||||||||||
| MBRB16H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB16H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 730mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 16A | 1 | 100μA @ 60V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||
| SS3P3HE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss3p3m384a-datasheets-7658.pdf | DO-220AA | SS3P3 | Single | DO-220AA (SMP) | 50A | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 3A | 30V | 200μA @ 30V | 580mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| UH2CHE3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh2dhe3ai-datasheets-1364.pdf | DO-214AA, SMB | 2 | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH2C | 2 | Single | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | 2A | 50A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 2μA @ 150V | 1.05V @ 2A | -55°C~175°C | ||||||||||||||||||
| MBR735-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR735 | 3 | Single | 1 | Rectifier Diodes | 7.5A | 840mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 100μA @ 35V | 840mV @ 15A | -65°C~175°C | ||||||||||||||||||||||
| RS1PGHE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs1pdm384a-datasheets-2346.pdf | DO-220AA | 2 | RS1PG | Single | DO-220AA (SMP) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 150 ns | Standard | 400V | 1A | 9pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| FES8DTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 125A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 950mV @ 8A | -55°C~150°C | ||||||||||||||||||||
| MBR735HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 | yes | No | MBR735 | 3 | Single | 7.5A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 100μA @ 35V | 840mV @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| M3045S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 30A | 700mV | 200A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 200A | TO-220AB | Schottky | 45V | 30A | 1 | 200μA @ 45V | 700mV @ 30A | -65°C~150°C | ||||||||||||||||||||
| MBR1650HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-3 | 2 | yes | EAR99 | No | 8541.10.00.80 | MBR1650 | 3 | Single | 16A | 150A | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 50V | 150A | Schottky | 50V | 16A | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| MBR10H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||
| MBR750HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR750 | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 500μA @ 50V | 750mV @ 7.5A | -65°C~175°C | |||||||||||||||||||||||
| MBR750-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR750 | 3 | Single | 1 | Rectifier Diodes | 7.5A | 750mV | 150A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 500μA @ 50V | 750mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||
| M3035S-E3/4W | Vishay Semiconductor Diodes Division | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 30A | 200A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 200A | TO-220AB | Schottky | 35V | 30A | 1 | 200μA @ 35V | 700mV @ 30A | -65°C~150°C | ||||||||||||||||||||
| MBR1035-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1035 | 3 | Single | 1 | Rectifier Diodes | 10A | 840mV | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||||||
| SS1P6LHE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss1p5lm384a-datasheets-7225.pdf | DO-220AA | SS1P6 | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 1A | 60V | 100μA @ 60V | 590mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| GUR5H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 90A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | ||||||||||||||||||||
| MBR760HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | MBR760 | 3 | Single | 1 | Rectifier Diodes | 7.5A | 750mV | 150A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 500μA @ 60V | 750mV @ 7.5A | -65°C~175°C |
