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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| NSB8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | Standard | 400V | 8A | 1 | 8A | 55pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||
| MBR1060HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1060 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||
| NSB8KTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | NSB8K | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.1V | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 125A | Standard | 800V | 8A | 1 | 8A | 55pF @ 4V 1MHz | 10μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||
| NSB8MTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | NSB8M | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 125A | Standard | 1kV | 8A | 1 | 8A | 55pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||
| NSF8DTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 125A | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||
| MBR1635HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-3 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | 260 | MBR1635 | 3 | Single | 30 | 1 | Rectifier Diodes | 16A | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 1.8kA | Schottky | 35V | 16A | 1 | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | |||||||||||||||||||||
| MBRF1035-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||||
| MBRF10H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||
| NS8BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 125A | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| MBRF760-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||
| MI3035S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 30A | 700mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 200μA | 35V | 200A | TO-262AA | Schottky | 35V | 30A | 1 | 200μA @ 35V | 700mV @ 30A | -65°C~150°C | |||||||||||||||||||||||
| NS8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| S4PGHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | 260 | S4PG | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 110V | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | 400V | TO-277A | 2.5 μs | 2.5 μs | Standard | 400V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 4A | -55°C~150°C | |||||||||||||
| MBRB745-E3/45 | Vishay Semiconductor Diodes Division | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 38 Weeks | Unknown | 2 | Tin | No | MBRB745 | Common Cathode | TO-263AB | 7.5A | 570mV | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 400A | 100μA | 45V | 150A | 2.5 μs | Schottky | 45V | 7.5A | 45V | 100μA @ 45V | 840mV @ 15A | 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||
| MB3045S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | GULL WING | MB3045 | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 30A | 700mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 200A | Schottky | 45V | 30A | 1 | 200μA @ 45V | 700mV @ 30A | -65°C~150°C | |||||||||||||||||||||||||||
| FES16BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16B | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 250A | 100V | 35 ns | 35 ns | Standard | 100V | 16A | 1 | 10μA @ 100V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||
| MBRF1035HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||||
| MBRF7H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 50μA @ 45V | 630mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||
| MBRF7H35-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 50μA @ 35V | 630mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||
| NS8JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| GUR5H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 90A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | ||||||||||||||||||||||
| BY229-200-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 | 2 | Tin | No | Common Cathode | TO-220AC | 8A | 1.85V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 100A | 200V | 145 ns | 145 ns | Standard | 200V | 8A | 200V | 10μA @ 200V | 1.85V @ 20A | 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| M2045S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-m2035se34w-datasheets-3990.pdf | TO-220-3 | 3 | 19 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | R-PSFM-T3 | 20A | 200A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 200A | TO-220AB | Schottky | 45V | 20A | 1 | 200μA @ 45V | 700mV @ 20A | -55°C~150°C | |||||||||||||||||||||||
| MI3045S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-220-3 | 3 | 19 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | R-PSIP-T3 | 30A | 200A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 200A | TO-262AA | Schottky | 45V | 30A | 1 | 200μA @ 45V | 700mV @ 30A | -65°C~150°C | |||||||||||||||||||||||
| MBR10H90-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-220-2 | 2 | No | Single | TO-220AC | 10A | 880mV | Fast Recovery =< 500ns, > 200mA (Io) | 250A | 4.5μA | 90V | 250A | Schottky | 90V | 10A | 90V | 4.5μA @ 90V | 770mV @ 10A | 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| MBR10H100HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 250A | 4.5μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 100V | 250A | Schottky | 100V | 10A | 1 | 4.5μA @ 100V | 770mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||||
| GI1404HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi1404e345-datasheets-6839.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 5μA @ 200V | 975mV @ 8A | -65°C~150°C | ||||||||||||||||||||||
| MBRF735-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | No | Single | ITO-220AC | 7.5A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 35V | 100μA @ 35V | 840mV @ 15A | 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| MBRF1660HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | 3 | Single | 1 | Rectifier Diodes | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 16A | 1 | 1mA @ 60V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||
| MBRF10H90-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-220-2 Full Pack, Isolated Tab | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 10A | 250A | 4.5μA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5μA | 90V | 250A | Schottky | 90V | 10A | 4.5μA @ 90V | 770mV @ 10A | -65°C~175°C |
