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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR16H50-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 16A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 50V | 150A | Schottky | 50V | 16A | 100μA @ 50V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||
| MBR16H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 16A | 1 | 100μA @ 45V | 660mV @ 16A | -65°C~175°C | |||||||||||||||||||||
| MBRF10H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 750mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 630mV @ 10A | -65°C~175°C | |||||||||||||||||||||
| MBRF1660-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 16A | 1 | 1mA @ 60V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||||||
| MBRF10H90-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-220-2 Full Pack, Isolated Tab | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 10A | 250A | 4.5μA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5μA | 90V | 250A | Schottky | 90V | 10A | 4.5μA @ 90V | 770mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| MBRF735HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 100μA @ 35V | 840mV @ 15A | -65°C~150°C | ||||||||||||||||||||||
| MBRF1050HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||
| MBR1645HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-3 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | 260 | MBR1645 | 3 | Single | 30 | 1 | Rectifier Diodes | 16A | 630mV | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 150A | Schottky | 45V | 16A | 1 | 200μA @ 45V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||
| MBRB1050HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1050 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||
| MBR7H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 50μA @ 45V | 630mV @ 7.5A | -65°C~175°C | |||||||||||||||||||||
| MBR10H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 630mV @ 10A | -65°C~175°C | |||||||||||||||||||||
| MBRB1035HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1035 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||
| UH2DHE3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh2dhe3ai-datasheets-1364.pdf | DO-214AA, SMB | 2 | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH2D | 2 | Single | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | 2A | 50A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 1.05V @ 2A | -55°C~175°C | |||||||||||||||
| MBRF16H35HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 16A | 1 | 100μA @ 35V | 660mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||
| MBRF16H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | yes | No | 3 | Single | 16A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 45V | 150A | Schottky | 45V | 16A | 100μA @ 45V | 660mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| MBRB10H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 850mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | |||||||||||||||||
| MBRB1650HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1650 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 150A | Schottky | 50V | 16A | 1 | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||
| MBRB1650-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1650 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 150A | Schottky | 50V | 16A | 1 | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||
| MBRB1045HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1045 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||
| MBRB16H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | MBRB16H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 16A | 1 | 100μA @ 60V | 730mV @ 16A | -65°C~175°C | ||||||||||||||||||
| DTV32-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-dtv32be345-datasheets-3925.pdf | TO-220-2 | 2 | DTV32 | Single | TO-220AC | 1.5V | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 130A | 1.5kV | 175 ns | 175 ns | Standard | 1.5kV | 10A | 1500V | 100μA @ 1500V | 1.5V @ 6A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||
| MBRF10H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | ||||||||||||||||||||||
| MBRB1660HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | 245 | MBRB1660 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 16A | 1 | 1mA @ 60V | 750mV @ 16A | -65°C~175°C | |||||||||||||||
| MBRB735-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | MBRB735 | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 840mV | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 100μA @ 35V | 840mV @ 15A | -65°C~150°C | |||||||||||||||||
| MBRF16H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 660mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 16A | 1 | 100μA @ 45V | 660mV @ 16A | -65°C~150°C | |||||||||||||||||||||
| MBRB745HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | 245 | MBRB745 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 840mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 100μA @ 45V | 840mV @ 15A | -65°C~150°C | |||||||||||
| MBRF16H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 16A | 1 | 100μA @ 60V | 730mV @ 16A | -65°C~150°C | ||||||||||||||||||||||
| MBRB1635HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | GULL WING | 245 | MBRB1635 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 150A | Schottky | 35V | 16A | 1 | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||
| MBR7H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 50μA @ 45V | 630mV @ 7.5A | -65°C~175°C | |||||||||||||||||||||
| MBR1050HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1050 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C |
