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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5306-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6075 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30 ns | Standard | 150V | 3A | 1 | 3A | 1μA @ 150V | 2.04V @ 9.4A | -65°C~155°C | ||||||||||||||||||||||||||||||
| 1N5301-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6622U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 20A | 30ns | Standard | 1 | 600V | 500nA @ 600V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| 1N5307-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5303-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 2 days ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5807 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | 2 | 14 Weeks | 2 | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 30 ns | Standard | 50V | 3A | 1 | 3A | 65pF @ 10V 1MHz | 5μA @ 50V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||
| JANTXV1N5809 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 65pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||
| 1N5314-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | Contains Lead | 20 Weeks | 100V | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5293-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR70J05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 70A | 870A | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 600V | 600V | 500 ns | 500 ns | Standard | 600V | 70A | 25μA @ 100V | 1.4V @ 70A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5312-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5292-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5617US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 1A | 500nA @ 400V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| JANTX1N6073 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 14 Weeks | 2 | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 1 | 3A | 1μA @ 50V | 2.04V @ 9.4A | 850mA | -65°C~155°C | |||||||||||||||||||||||||||||||||
| 1N5296-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5811 | Microsemi Corporation | $18.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | Single | 1 | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 30 ns | Standard | 150V | 3A | 1 | 3A | 65pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||
| JANTX1N5550US | Microsemi Corporation | $11.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||
| 1N5310-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5311-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 3 weeks ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80APF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs80apf02m3-datasheets-6175.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | R-PSFM-T3 | 1.25V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1kA | 100μA | TO-247AC | 190 ns | Standard | 600V | 80A | 1000A | 1 | 100μA @ 600V | 1.25V @ 80A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| FR70MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Panel, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | Straight | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 870A | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 70A | 1 | 1000V | 25μA @ 100V | 1.4V @ 70A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||
| 1N6621US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||
| JANTX1N6622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 20A | 0.5μA | 30 ns | Standard | 660V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||
| IDC15S120C5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | Die | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | Single | DO-203AB (DO-5) | 1.46V | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | Standard | 1.6kV | 70A | 1600V | 1.46V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N3612 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | Single | DO-203AB (DO-5) | 1.46V | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | Standard, Reverse Polarity | 1.6kV | 70A | 1600V | 1.46V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3645 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 14A | Standard | 1.4kV | 250mA | 1400V | 5μA @ 1400V | 5V @ 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| JAN1N3646 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2.5kV | 14A | Standard | 1.75kV | 250mA | 1750V | 5μA @ 1750V | 5V @ 250mA | -65°C~175°C |
