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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Max Current Rating | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Cable Length | Number of Conductors | Natural Thermal Resistance | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Cable Pitch |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-SD2500C20K | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Clamp, Screw | Clamp On | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vssd2500c12k-datasheets-8859.pdf | DO-200AC, K-PUK | 2 | 12 Weeks | 2 | EAR99 | unknown | END | NO LEAD | NOT SPECIFIED | SD2500C*K | Single | NOT SPECIFIED | 1 | 3kA | 1.41V | 32.46kA | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75mA | 32.46kA | 2kV | Standard | 2kV | 3kA | 1 | 3000A | 2000V | 75mA @ 2000V | 1.41V @ 4000A | 3000A | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6627 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| IDC10S120C5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | Die | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-86HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | Standard, Reverse Polarity | 600V | 85A | 1800A | 1 | 9mA @ 600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| S3HVM7.5 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | UNSPECIFIED | UNSPECIFIED | S3HVM | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XXSS-X2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2.5 μs | Standard | 7.5kV | 1.5A | 20A | 1 | 7500V | 1μA @ 7500V | 9.2V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S3HVM10 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | UNSPECIFIED | UNSPECIFIED | S3HVM | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XXSS-X2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2.5 μs | Standard | 10kV | 1.2A | 20A | 1 | 10000V | 1μA @ 10000V | 11.5V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SHVM10 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 1 | 18 Weeks | EAR99 | unknown | UPPER | UNSPECIFIED | SHVM | 150°C | 1 | Not Qualified | O-XUPM-X1 | SINGLE | CATHODE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2 μs | Standard | 10kV | 500mA | 10000V | 1μA @ 10000V | 28V @ 800mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3HVM5 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | UNSPECIFIED | UNSPECIFIED | S3HVM | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XXSS-X2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2.5 μs | Standard | 5kV | 2.4A | 20A | 1 | 5000V | 1μA @ 5000V | 5.75V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N645UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/240 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n645ur1-datasheets-9443.pdf | DO-213AA | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 225V | 5A | Standard | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-SD1700C24K | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Clamp | Clamp On | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssd1700c24k-datasheets-9444.pdf | DO-200AC, K-PUK | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | END | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-CEDB-N2 | 2.08kA | 25.15kA | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75mA | 2.4kV | Standard | 2.4kV | 2.08kA | 1 | 2080A | 2400V | 75mA @ 2400V | 1.81V @ 4000A | 2080A | |||||||||||||||||||||||||||||||||||||||||||||||
| PF8 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300 ns | Standard | 800V | 850mA | 38A | 0.85A | 18pF @ 5V 1MHz | 800V | 1μA @ 800V | 1.35V @ 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GKN71/12 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.2kV | 95A | 1150A | 1200V | 10mA @ 1200V | 1.5V @ 60A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PFF0 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | 2 | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Rectifier Diodes | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 22A | 75 ns | Standard | 1kV | 1A | 1A | 30pF @ 5V 1MHz | 1000V | 1μA @ 1000V | 2.1V @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5827R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N5827R | 1 | O-MUPM-D1 | 15A | 500A | 1μA | SINGLE | ANODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | DO-203AA | Schottky, Reverse Polarity | 30V | 15A | 1 | 10mA @ 20V | 470mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5826R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-1n5826r-datasheets-1238.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N5826R | 1 | O-MUPM-D1 | 15A | 500A | 1μA | SINGLE | ANODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | DO-203AA | Schottky, Reverse Polarity | 20V | 15A | 1 | 10mA @ 20V | 440mV @ 15A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| R9G01812XX | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-r9g00212xx-datasheets-8523.pdf | DO-200AB, B-PUK | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | END | NO LEAD | 190°C | -40°C | 1 | Rectifier Diodes | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150000μA | 25 μs | Standard | 1.8kV | 1.2kA | 16000A | 1 | 1680A | 1800V | 150mA @ 1800V | 1.45V @ 1500A | 1200A | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5804US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 175°C | -65°C | RoHS Compliant | SQ-MELF | 16 Weeks | 2 | 1N5804 | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 100V | 35A | 25 ns | Standard | 25pF @ 5V 1MHz | 100V | 1μA @ 100V | 875mV @ 1A | 1.1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5615 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | DO-7 | 150 ns | Standard | 200V | 1A | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5828R | GeneSiC Semiconductor | $15.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | 1.3A | UPPER | SOLDER LUG | 1N5828R | 1 | O-MUPM-D1 | 15A | 500A | 1μA | SINGLE | ANODE | POWER | 100.584mm | 20 | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 15A | 1 | 10mA @ 20V | 500mV @ 15A | -65°C~150°C | 1mm | ||||||||||||||||||||||||||||||||||||||||||
| 1N6537 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | O-LALF-W2 | 1A | ISOLATED | SILICON | 10μA | 500V | 30 ns | RECTIFIER DIODE | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SHVM10F | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 2 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.70 | UNSPECIFIED | UNSPECIFIED | SHVM | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XXSS-X2 | SINGLE | CATHODE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2 μs | Standard | 10kV | 500mA | 0.35A | 10000V | 1μA @ 10000V | 28V @ 800mA | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| S20F | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.70 | e0 | TIN LEAD | DUAL | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300 ns | Standard | 2kV | 500mA | 10A | 0.23A | 4pF @ 5V 1MHz | 2000V | 1μA @ 2000V | 5V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N6638 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 50 Weeks | 2 | 1N6638 | Single | Axial | 1.1V | Fast Recovery =< 500ns, > 200mA (Io) | 2.5A | 4.5ns | Standard | 125V | 500nA @ 125V | 800mV @ 10mA | 300mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A451PN | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-a451pd-datasheets-8845.pdf | DO-200AC, K-PUK | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | END | NO LEAD | 175°C | -40°C | 1 | Rectifier Diodes | Not Qualified | O-CEDB-N2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1.8kV | 2.5kA | 30000A | 1 | 2500A | 1800V | 50mA @ 1800V | 1.4V @ 5000A | 2500A | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5417US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-SD2500C24K | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Clamp | Clamp On | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vssd2500c12k-datasheets-8859.pdf | DO-200AC, K-PUK | 2 | 12 Weeks | EAR99 | unknown | END | NO LEAD | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-CEDB-N2 | SINGLE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75000μA | Standard | 2.4kV | 3kA | 32460A | 1 | 3000A | 2400V | 1.14V @ 4000A | 3000A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA17-16A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | Not Applicable | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsa1716a-datasheets-9402.pdf | 1.6kV | 40A | DO-203AA, DO-4, Stud | 31.32mm | 11mm | Lead Free | 12 Weeks | No SVHC | 2 | Reverse | Single | DO-203AA | 40A | 25A | 1.36V | 370A | Standard Recovery >500ns, > 200mA (Io) | 400A | 4mA | 1.6kV | 400A | 1.6kV | Avalanche | 1.6kV | 25A | 1600V | 4mA @ 1600V | 1.36V @ 55A | 25A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| R9G01618XX | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-r9g00218xx-datasheets-8580.pdf | DO-200AB, B-PUK | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | END | UNSPECIFIED | NOT SPECIFIED | 2 | 175°C | -40°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XEDB-X2 | SINGLE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25 μs | Standard | 1.6kV | 1.8kA | 21500A | 1 | 1800A | 1600V | 150mA @ 1600V | 1.2V @ 1500A | 1800A | ||||||||||||||||||||||||||||||||||||||||||||
| S85QR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1 | 1200V | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6620 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | DO-41 | 30 ns | Standard | 220V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C |
