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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| FR30BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 13 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||
| JAN1N5802US | Microsemi Corporation | $12.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 35A | 25 ns | Standard | 50V | 2.5A | 1 | 25pF @ 10V 1MHz | 1μA @ 50V | 975mV @ 2.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| JAN1N5420US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILITY | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Rectifier Diodes | Qualified | O-LELF-R2 | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-86HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | Standard, Reverse Polarity | 400V | 85A | 1800A | 1 | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6643U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6642u-datasheets-6254.pdf | SQ-MELF, D | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 2.5A | 0.5μA | 20ns | Standard | 0.3A | 5pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTXV1N6639 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 2.5A | 0.1μA | DO-35 | 4ns | Standard | 0.3A | 100nA @ 75V | 1.2V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 1N6623US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1.8V | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 880V | 20A | 50 ns | Standard | 880V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| 1N6620US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | 30 ns | Standard | 220V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| 1N5802US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | 2012 | SQ-MELF | 16 Weeks | 1N5802 | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 5V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 1.1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 85A | 1800A | 1 | 1600V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5554US |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6547 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 800V | RECTIFIER DIODE | 1 | 3A | 0.075μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB5712 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | 75mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 20V | Schottky | 20V | 75mA | 0.075A | 2pF @ 0V 1MHz | 150μA @ 16V | 1V @ 35mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N6545 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 7 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 600V | RECTIFIER DIODE | 1 | 3A | 0.05μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PM6 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 3 μs | Standard | 600V | 2A | 50A | 1 | 2A | 18pF @ 4V 1MHz | 600V | 1mA @ 600V | 1V @ 1A | ||||||||||||||||||||||||||||||||||||||||||||
| VS-86HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 85A | 1800A | 1 | 1600V | 4.5mA @ 1600V | 1.4V @ 267A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N6621US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 10pF @ 10V 1MHz | 400V | 500nA @ 400V | 1.6V @ 2A | 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | No | Single | DO-203AB (DO-5) | 70A | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 4.5mA | 1.6kV | 1.25kA | 1.6kV | Standard | 1.6kV | 70A | 1600V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A100 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | O-XALF-W2 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 100V | Schottky | 100V | 1A | 1A | 100μA @ 100V | 690mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5416US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount, Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 1 | 3A | 1μA @ 100V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| S70MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.1V | 1.25kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 70A | 1 | 1000V | 10μA @ 100V | 1.1V @ 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||
| JAN1N5819UR-1/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3595AUR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3595ur1-datasheets-5899.pdf | DO-213AA | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | MIL-19500/241 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Rectifier Diodes | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 125V | 3μs | Standard | 4A | 0.15A | 125V | 2nA @ 125V | 920mV @ 100mA | 150mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6642US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, D | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 1N6642 | 2 | Single | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 2.5A | 0.5μA | 5 ns | Standard | 75V | 300mA | 0.3A | 5pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||
| JANTXV1N5621 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | DO-7 | 300 ns | Standard | 800V | 1A | 1A | 20pF @ 12V 1MHz | 500nA @ 800V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| PM8 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 75 ns | Standard | 800V | 1A | 50A | 1 | 2A | 30pF @ 5V 1MHz | 800V | 1μA @ 800V | 2.1V @ 1A | ||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6641 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 0.1μA | DO-35 | 5ns | Standard | 0.3A | 100nA @ 50V | 1.1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6643 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 75V | 0.5μA | DO-35 | 20ns | Standard | 0.3A | 5pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| S70VR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.1V | 1.25kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.25kA | 10μA | 1.4kV | 1.4kV | Standard, Reverse Polarity | 1.4kV | 70A | 1 | 1400V | 10μA @ 100V | 1.1V @ 70A | -65°C~150°C |
