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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FR30A02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N5806US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 175°C | -65°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/semtech-1n5806us-datasheets-1163.pdf | SQ-MELF | 16 Weeks | 2 | No | 1N5806 | Single | 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 150V | 35A | 25 ns | Standard | 25pF @ 5V 1MHz | 150V | 1μA @ 150V | 875mV @ 1A | 1.1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6621 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||
| JANTX1N6641US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, B | 8 Weeks | 2 | Lead, Tin | Single | D-5B | 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 50V | 5ns | Standard | 50V | 100μA @ 50V | 1.1V @ 300mA | 300mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3768R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3768 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 2mA | 1kV | 400A | 1kV | Standard, Reverse Polarity | 1kV | 35A | 1 | 1000V | 2mA @ 1000V | 1.8V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||
| 1N6547 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 800V | RECTIFIER DIODE | 1 | 3A | 0.075μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB5712 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | 75mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 20V | Schottky | 20V | 75mA | 0.075A | 2pF @ 0V 1MHz | 150μA @ 16V | 1V @ 35mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6545 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 7 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 600V | RECTIFIER DIODE | 1 | 3A | 0.05μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PM6 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 3 μs | Standard | 600V | 2A | 50A | 1 | 2A | 18pF @ 4V 1MHz | 600V | 1mA @ 600V | 1V @ 1A | |||||||||||||||||||||||||||||||||||||||||
| VS-86HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 85A | 1800A | 1 | 1600V | 4.5mA @ 1600V | 1.4V @ 267A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| 1N6621US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 10pF @ 10V 1MHz | 400V | 500nA @ 400V | 1.6V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | No | Single | DO-203AB (DO-5) | 70A | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 4.5mA | 1.6kV | 1.25kA | 1.6kV | Standard | 1.6kV | 70A | 1600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A100 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | O-XALF-W2 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 100V | Schottky | 100V | 1A | 1A | 100μA @ 100V | 690mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5416US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount, Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 1 | 3A | 1μA @ 100V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S70MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.1V | 1.25kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 70A | 1 | 1000V | 10μA @ 100V | 1.1V @ 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||
| JAN1N5819UR-1/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6639 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 2.5A | 0.1μA | DO-35 | 4ns | Standard | 0.3A | 100nA @ 75V | 1.2V @ 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N6623US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1.8V | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 880V | 20A | 50 ns | Standard | 880V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||
| 1N6620US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | 30 ns | Standard | 220V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||
| 1N5802US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | 2012 | SQ-MELF | 16 Weeks | 1N5802 | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 5V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 1.1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-87HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 85A | 1800A | 1 | 1600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||
| JAN1N5554US |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5188 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Single | 1 | Qualified | 3A | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 400V | 80A | 250 ns | Standard | 400V | 3A | 1 | 3A | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-1N3768 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 20.02mm | 36.9062mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3768 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 2mA | 1kV | 400A | 1kV | Standard | 1kV | 35A | 1 | 1000V | 2mA @ 1000V | 1.8V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||
| VS-85HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 1kV | 1.8kA | 1kV | Standard, Reverse Polarity | 1kV | 85A | 1 | 1000V | 9mA @ 1000V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||
| VS-87HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard | 1.6kV | 85A | 1800A | 1 | 1600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5417 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 1N5417 | 2 | Single | 1 | Rectifier Diodes | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 150A | 1 | 4.5A | 250pF @ 4V 1MHz | 1μA @ 200V | 1.1V @ 3A | 4.5A | ||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5622 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||
| 1N4305-1E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | RoHS Compliant | DO-204AH, DO-35, Axial | 8 Weeks | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 2ns | Standard | 50V | 100nA @ 50V | 850mV @ 10mA | 200mA | -65°C~150°C |
