Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S85DR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85dr-datasheets-1196.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFLR80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 70A | 730A | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 730A | 100μA | 800V | 730A | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 70A | 1 | 100μA @ 800V | 1.85V @ 219.8A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| S85B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard | 100V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6626 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 30 ns | Standard | 220V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 220V | 1.35V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N6627US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | 1.5V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| JANTX1N3645 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 14A | Standard | 2000V | 5μA @ 2000V | 5V @ 250mA | 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N6643 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 50 Weeks | 1N6643 | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | Standard | 50V | 500nA @ 50V | 800mV @ 10mA | 300mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S85G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85g-datasheets-1180.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard | 400V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S85M | GeneSiC Semiconductor | $14.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 85A | 1 | 1000V | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5827 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n5827-datasheets-1184.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N5827 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 15A | 470mV | 500A | 1μA | CATHODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | DO-203AA | Schottky | 30V | 15A | 1 | 10mA @ 20V | 470mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| S85BR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N3612 | Semtech Corporation | $14.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 2μs | Standard | 1A | 400V | 500nA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFLR40S02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6544 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 7 Weeks | EAR99 | Lead, Tin | 8541.10.00.80 | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | O-LALF-W2 | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 500V | RECTIFIER DIODE | 1 | 3A | 0.03μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3613 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | MIL-19500/228J | NO | WIRE | 2 | 175°C | 1 | Rectifier Diodes | Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | DO-41 | 2μs | Standard | 1A | 600V | 500nA @ 600V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6642 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | 2016 | Axial | 50 Weeks | 2 | 1N6642 | Single | Axial | 1.2V | Fast Recovery =< 500ns, > 200mA (Io) | 2.5A | 5ns | Standard | 75V | 500nA @ 75V | 800mV @ 10mA | 300mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5415 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| FR30M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2016 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 30A | 1 | 1000V | 25μA @ 800V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6641US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, B | 8 Weeks | 2 | Lead, Tin | Single | D-5B | 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 50V | 5ns | Standard | 50V | 100μA @ 50V | 1.1V @ 300mA | 300mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3768R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3768 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 2mA | 1kV | 400A | 1kV | Standard, Reverse Polarity | 1kV | 35A | 1 | 1000V | 2mA @ 1000V | 1.8V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| 1N5418 | Semtech Corporation | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | MIL-19500 | WIRE | 1N5418 | 2 | Single | 1 | Rectifier Diodes | Not Qualified | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 80A | 150 ns | Standard | 150A | 1 | 4.5A | 165pF @ 4V 1MHz | 1μA @ 400V | 1.1V @ 3A | 4.5A | |||||||||||||||||||||||||||||||||||||||||||||
| VS-72HAR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-203AB, DO-5, Stud | 17 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 800V | 70A | 800V | 1.35V @ 220A | 70A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFL80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.151kA | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 800V | 500 ns | 500 ns | Standard | 800V | 85A | 1 | 100μA @ 800V | 1.75V @ 266.9A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-88HF120 | Vishay Semiconductor Diodes Division | $9.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | 1.8kA | 1.2kV | Standard | 1.2kV | 85A | 1 | 1200V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5615US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 1A | 45pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| FR30BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 13 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5802US | Microsemi Corporation | $12.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 35A | 25 ns | Standard | 50V | 2.5A | 1 | 25pF @ 10V 1MHz | 1μA @ 50V | 975mV @ 2.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5420US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILITY | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Rectifier Diodes | Qualified | O-LELF-R2 | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-86HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | Standard, Reverse Polarity | 400V | 85A | 1800A | 1 | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6643U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6642u-datasheets-6254.pdf | SQ-MELF, D | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 2.5A | 0.5μA | 20ns | Standard | 0.3A | 5pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C |
