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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PM8 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 75 ns | Standard | 800V | 1A | 50A | 1 | 2A | 30pF @ 5V 1MHz | 800V | 1μA @ 800V | 2.1V @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6641 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 0.1μA | DO-35 | 5ns | Standard | 0.3A | 100nA @ 50V | 1.1V @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6643 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 75V | 0.5μA | DO-35 | 20ns | Standard | 0.3A | 5pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S70VR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.1V | 1.25kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.25kA | 10μA | 1.4kV | 1.4kV | Standard, Reverse Polarity | 1.4kV | 70A | 1 | 1400V | 10μA @ 100V | 1.1V @ 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5188 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Single | 1 | Qualified | 3A | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 400V | 80A | 250 ns | Standard | 400V | 3A | 1 | 3A | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-1N3768 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 20.02mm | 36.9062mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3768 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 2mA | 1kV | 400A | 1kV | Standard | 1kV | 35A | 1 | 1000V | 2mA @ 1000V | 1.8V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||
| VS-85HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 1kV | 1.8kA | 1kV | Standard, Reverse Polarity | 1kV | 85A | 1 | 1000V | 9mA @ 1000V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||
| VS-87HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard | 1.6kV | 85A | 1800A | 1 | 1600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5417 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 1N5417 | 2 | Single | 1 | Rectifier Diodes | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 150A | 1 | 4.5A | 250pF @ 4V 1MHz | 1μA @ 200V | 1.1V @ 3A | 4.5A | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5622 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||
| 1N6857UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 150°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 150mA | ISOLATED | SILICON | 20V | RECTIFIER DIODE | 0.15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6642U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6642u-datasheets-6254.pdf | SQ-MELF, D | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | not_compliant | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 75V | 2.5A | 0.5μA | 20 ns | Standard | 100V | 300mA | 0.3A | 500nA @ 100V | 1.2V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-70HFL40S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 70A | 1.85V | 730A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 730A | 100μA | 400V | 730A | 400V | 500 ns | 500 ns | Standard | 400V | 70A | 1 | 100μA @ 400V | 1.85V @ 219.8A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||
| JANTXV1N6642US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 75V | 2.5A | 20 ns | Standard | 100V | 300mA | 0.3A | 500nA @ 100V | 1.2V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N6546 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 700V | RECTIFIER DIODE | 1 | 3A | 0.05μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR30AR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 10 | Straight | EAR99 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 200 ns | 200 ns | Standard, Reverse Polarity | 50V | 30A | 1 | 25μA @ 50V | 1.4V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| IDW32G65C5BXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idw32g65c5bxksa1-datasheets-4564.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 188W | 650V | 200μA | 0ns | Silicon Carbide Schottky | 74A | 1 | 470pF @ 1V 1MHz | 650V | 200μA @ 650V | 1.7V @ 16A | 16A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5416 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 80A | 150 ns | Standard | 150A | 1 | 4.5A | 430pF @ 4V 1MHz | 1μA @ 100V | 1.1V @ 3A | 4.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5619US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 250 ns | Standard | 1A | 500nA @ 600V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-86HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | Standard | 600V | 85A | 1800A | 1 | 9mA @ 600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N3957 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 2μs | Standard | 20A | 1A | 1000V | 500nA @ 1000V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFLR10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 730A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 70A | 1 | 100μA @ 100V | 1.85V @ 219.8A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| S70KR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s70kr-datasheets-1127.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 1.25kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 70A | 1 | 10μA @ 100V | 1.1V @ 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL5712/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | DO-213AA | DO-213AA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2pF @ 0V 1MHz | 16V | 150nA @ 16V | 1V @ 35mA | 75mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFLR80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.151kA | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 85A | 1369A | 1 | 100μA @ 800V | 1.75V @ 266.9A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 730A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 600V | 500 ns | 500 ns | Standard | 600V | 70A | 1 | 100μA @ 600V | 1.85V @ 219.8A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N6639US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | END | WRAP AROUND | 2 | Single | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 75V | 2.5A | 4 ns | Standard | 0.3A | 100nA @ 75V | 1.2V @ 300mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N6622US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 30 ns | Standard | 660V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| FR30JR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 200 ns | 250 ns | Standard, Reverse Polarity | 600V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6638 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 150V | 2.5A | 0.5μA | DO-35 | 20ns | Standard | 0.3A | 2.5pF @ 0V 1MHz | 125V | 500nA @ 125V | 1.1V @ 200mA | 300mA | -65°C~175°C |
