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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N5617 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | 2008 | Axial | 2 | 12 Weeks | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 1N5617 | 2 | Single | 1 | Rectifier Diodes | 2A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 25A | DO-7 | 150 ns | Standard | 1A | 27pF @ 5V 1MHz | 500nA @ 400V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N6627 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| 1N5622 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | No | 8541.10.00.80 | WIRE | 1N5622 | 2 | Single | 1 | Rectifier Diodes | 2A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 500nA | 1kV | 30A | 2 μs | Standard | 1A | 23pF @ 5V 1MHz | 1000V | 500nA @ 1000V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60APF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs60apf12m3-datasheets-8018.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 480 ns | Standard | 1kV | 60A | 830A | 1 | 1000V | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-71HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | Single | DO-203AB | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1.25kA | 1kV | Standard, Reverse Polarity | 1kV | 70A | 1000V | 9mA @ 1000V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5615 | Semtech Corporation | $13.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 2A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 25A | DO-7 | 150 ns | Standard | 1A | 27pF @ 5V 1MHz | 500nA @ 200V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| JANTX1N5618US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||
| VS-60APF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 8 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | 1.3V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 830A | 100μA | TO-247AC | 180 ns | Standard | 200V | 60A | 1 | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-HFA30PB120HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vshfa30pb120hn3-datasheets-9053.pdf | TO-247-2 | 2 | 13 Weeks | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 120A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350W | 40μA | 1.2kV | 170 ns | 170 ns | Standard | 1.2kV | 30A | 1 | 1200V | 40μA @ 1200V | 4.1V @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| JANTX1N6641 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 0.1μA | DO-35 | 5ns | Standard | 0.3A | 100μA @ 50V | 1.1V @ 300mA | 300mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-88HF80 | Vishay Semiconductor Diodes Division | $9.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 800V | 1.8kA | 800V | Standard | 800V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||
| JANTX1N6639 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 0.1μA | DO-35 | 4ns | Standard | 0.3A | 100μA @ 75V | 1.2V @ 300mA | 300mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| 1N2133A | GeneSiC Semiconductor | $50.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n2133a-datasheets-0948.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N2133 | DO-5 | 60A | 1.05kA | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 300V | 300V | Standard | 300V | 60A | 300V | 10μA @ 50V | 1.1V @ 60A | 60A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4247 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 5 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| JANTX1N5186 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Single | 1 | Qualified | 3A | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 1 | 3A | 2μA @ 100V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| FFSH20120ADN-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | /files/onsemiconductor-ffsh20120adnf085-datasheets-9061.pdf | TO-247-3 | 10 Weeks | yes | not_compliant | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 612pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 15A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5551 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 5A | 1.2V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 400V | 3A | 1 | 3A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| VS-1N2137A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N2137 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 60A | 900A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 500V | Standard | 500V | 60A | 1 | 10mA @ 500V | 1.3V @ 188A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||
| VS-71HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | No | Single | DO-203AB | 70A | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1.2kV | 1.25kA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 70A | 1200V | 9mA @ 1200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Screw | 190°C | -65°C | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 40A | 1.3V | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 570A | 9mA | 1.2kV | 595A | 1.2kV | Standard | 1.2kV | 40A | 1 | 1200V | 9mA @ 1200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||
| 1N6623 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 1.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 20A | 50 ns | Standard | 880V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| JANTX1N5811US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 125A | 30 ns | Standard | 150V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-80APS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishay-vs80aps08m3-datasheets-8236.pdf | TO-247-3 | 3 | 8 Weeks | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | Common Anode | 1 | 80A | 1.17V | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | 800V | 1.5kA | TO-247AC | Standard | 800V | 80A | 1 | 100μA @ 800V | 1.17V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| DSB1A60 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 60V | Schottky | 60V | 1A | 1A | 100μA @ 80V | 690mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 1.3V | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 595A | 1.2kV | Standard, Reverse Polarity | 1.2kV | 40A | 1 | 1200V | 9mA @ 1200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||
| JANTX1N6643 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jans1n6642-datasheets-6195.pdf | Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 500nA | 75V | 2.5A | DO-35 | 6 ns | Standard | 0.3A | 5pF @ 0V 1MHz | 125V | 50nA @ 20V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||
| VS-60HFUR-300 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 15 Weeks | 60HFUR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5804US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 35A | 25 ns | Standard | 100V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 100V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| 1N5807 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 16 Weeks | 1N5807 | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 60pF @ 5V 1MHz | 50V | 5μA @ 50V | 875mV @ 4A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N645-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/240 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6451-datasheets-0792.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn63Pb37) | MIL-19500 | WIRE | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 225V | 5A | Standard | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C |
