Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Frequency Band | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UH4PBCHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-uh4pbchm3ai-datasheets-9940.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 175°C | 30 | 2 | R-PDSO-F3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | TO-277A | 25 ns | Standard | 100V | 2A | 40A | 1 | 2A | 21pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.05V @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
DB2J40700L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2011 | /files/panasonicelectroniccomponents-db2j40700l-datasheets-7534.pdf | SC-90, SOD-323F | 1.2mm | 600μm | 800μm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | Tin | No | 8541.10.00.60 | DUAL | FLAT | DB2J407 | Single | 1 | Rectifier Diodes | 500mA | 550mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2A | 100μA | 40V | 2A | 3.6 ns | Schottky | 40V | 500mA | 0.5A | 10.5pF @ 10V 1MHz | ULTRA HIGH FREQUENCY | 100μA @ 35V | 550mV @ 500mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||
NRVB10100MFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-nrvb10100mfst1g-datasheets-2923.pdf | 8-PowerTDFN, 5 Leads | 5 | 9 Weeks | yes | EAR99 | LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 150A | Schottky | 100V | 10A | 1 | 100μA @ 100V | 950mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
VIT5200-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt5200e34w-datasheets-7124.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T3 | 5A | 650mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 2.5mA | 200V | Schottky | 200V | 5A | 1 | 5A | 200V | 150μA @ 200V | 1.6V @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
MBRF760 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbrf760c0g-datasheets-7602.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 750mV @ 7.5A | 7.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SFF502G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff504gc0g-datasheets-7558.pdf | TO-220-3 Full Pack, Isolated Tab | 12 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 70pF @ 4V 1MHz | 100V | 10μA @ 100V | 980mV @ 2.5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ES1M-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microcommercialco-es1ktp-datasheets-1530.pdf | DO-214AC, SMA | 2 | 8 Weeks | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | ES1M | 2 | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 100ns | Standard | 1A | 45pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.7V @ 1A | 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
SF5405-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 150A | 500V | 75 ns | 75 ns | Standard | 500V | 3A | 1 | 3A | 5μA @ 500V | 1.7V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
V15PN50-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pn50m386a-datasheets-7505.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 150°C | 30 | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | TO-277A | Schottky | 50V | 15A | 200A | 1 | 50V | 3mA @ 50V | 560mV @ 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
SK82C V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 500μA @ 20V | 8A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SF5405-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.7V | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 150A | 500V | 75 ns | 75 ns | Standard | 500V | 3A | 1 | 3A | 5μA @ 500V | 1.7V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
NRVTS10100EMFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nts10100emfst1g-datasheets-5685.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 6 Weeks | ACTIVE (Last Updated: 2 weeks ago) | yes | not_compliant | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 10A | 100V | 50μA @ 100V | 720mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MURD330T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2001 | /files/onsemiconductor-murd330t4g-datasheets-7564.pdf | 300V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | 260 | MURD330 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 3A | 3A | 1.15V | 75A | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 5μA | 300V | 75A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 1 | 5μA @ 300V | 1.15V @ 3A | 3A DC | -55°C~175°C | ||||||||||||||||||||||||||
SS10P3HM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-ss10p4m387a-datasheets-1623.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | TO-277A | Schottky | 30V | 10A | 280A | 1 | 750pF @ 4V 1MHz | 30V | 800μA @ 30V | 560mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
SFA806G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sfa808gc0g-datasheets-2583.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SD060SC200A.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60pF @ 5V 1MHz | 200V | 70μA @ 200V | 920mV @ 3A | 3A | -55°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER603G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 10μA | 50ns | Standard | 150A | 1 | 6A | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
FS8K | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-fs8m-datasheets-0395.pdf | TO-277, 3-PowerDFN | 3 | 23 Weeks | 113.6mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 230A | 800V | 5μA | 3.37 μs | Standard | 800V | 8A | 1 | 8A | 118pF @ 0V 1MHz | 5μA @ 800V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
HER602G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 100V | 10μA @ 100V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR1202 B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr1204ha0g-datasheets-2534.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 500μA @ 20V | 550mV @ 12A | 12A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER604G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | PURE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300V | 10μA | 50ns | Standard | 150A | 1 | 6A | 80pF @ 4V 1MHz | 300V | 10μA @ 300V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
HER602G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 10μA | 50ns | Standard | 150A | 1 | 6A | 80pF @ 4V 1MHz | 100V | 10μA @ 100V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
UH4PCCHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh4pbchm3ai-datasheets-9940.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | DUAL | FLAT | 260 | 175°C | 30 | 2 | R-PDSO-F3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | TO-277A | 25 ns | Standard | 150V | 2A | 40A | 1 | 2A | 21pF @ 4V 1MHz | 150V | 5μA @ 150V | 1.05V @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
STTH8S06B-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth8s06d-datasheets-4357.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 11 Weeks | SOFT FACTOR IS 1 | YES | SINGLE | GULL WING | STTH8S06 | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Small Signal =< 200mA (Io), Any Speed | SILICON | 600V | 20μA | 18ns | Standard | 60A | 1 | 600V | 20μA @ 600V | 3.4V @ 8A | 8A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
FES10J | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 | 175°C | -55°C | ROHS3 Compliant | TO-277, 3-PowerDFN | 3 | 10 Weeks | 113.6mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 10A | SINGLE | CATHODE | ULTRA FAST RECOVERY | SILICON | 150A | 600V | 5μA | 1.8V | RECTIFIER DIODE | 1 | 0.04μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||
HER601G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 10μA | 50ns | Standard | 150A | 1 | 6A | 80pF @ 4V 1MHz | 50V | 10μA @ 50V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
SFF504G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff504gc0g-datasheets-7558.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 70pF @ 4V 1MHz | 200V | 10μA @ 200V | 980mV @ 2.5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AS3PDHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as3pgm386a-datasheets-3937.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 70A | TO-277A | 1.2 μs | Avalanche | 200V | 2.1A | 1 | 37pF @ 4V 1MHz | 10μA @ 200V | 1.1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
ZLLS2000QTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zlls2000qtc-datasheets-9967.pdf | SOT-23-6 | 6 | 23 Weeks | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 150°C | 1 | R-PDSO-G6 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1W | 40V | 40μA | 6ns | Schottky | 12A | 1 | 2.2A | 65pF @ 30V 1MHz | 40V | 40μA @ 30V | 540mV @ 2A | 2.2A DC | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
AS3PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as3pgm386a-datasheets-3937.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 70A | TO-277A | 1.2 μs | Avalanche | 600V | 2.1A | 1 | 37pF @ 4V 1MHz | 10μA @ 600V | 1.1V @ 3A | -55°C~175°C |
Please send RFQ , we will respond immediately.