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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| V12PM12HM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12pm12hm3ai-datasheets-7209.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | TO-277A | Schottky | 120V | 4.1A | 160A | 1 | 120V | 500μA @ 120V | 830mV @ 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| SS12P2L-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss12p3lm386a-datasheets-6565.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | DUAL | FLAT | SS12P2 | 3 | Common Anode | 1 | Rectifier Diodes | 12A | 560mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 280A | 1mA | 20V | 280A | TO-277A | Schottky | 20V | 12A | 1 | 930pF @ 4V 1MHz | 1mA @ 20V | 560mV @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| V12P8HM3_A/H | Vishay Semiconductor Diodes Division | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p8m386a-datasheets-9900.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 1mA @ 80V | 660mV @ 12A | 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6EWH06FNTRL-M3 | Vishay Semiconductor Diodes Division | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6ewh06fntrm3-datasheets-1939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 70A | TO-252AA | 25 ns | Standard | 600V | 6A | 1 | 6A | 50μA @ 600V | 2.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||
| SF5403-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 1 | 3A | 5μA @ 300V | 1.1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||
| TSN520M60 S4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsn520m60s3g-datasheets-3219.pdf | 8-PowerTDFN | 14 Weeks | 8-PDFN (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 60V | 500μA @ 60V | 580mV @ 20A | 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P6HM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p6m386a-datasheets-9280.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 3.6mA @ 60V | 620mV @ 15A | 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF1060 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbrf10200c0g-datasheets-2637.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 800mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF5403-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 1 | 3A | 5μA @ 300V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||
| V15P8HM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p8m386a-datasheets-5768.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 1.2mA @ 80V | 660mV @ 15A | 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGF5J C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf5jc0g-datasheets-7253.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 30μA @ 600V | 3V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V12P12-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-v12p12m386a-datasheets-7519.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREEWHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | V12P12 | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 12A | 800mV | 150A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 150A | TO-277A | Schottky | 120V | 12A | 1 | 500μA @ 120V | 800mV @ 12A | -40°C~150°C | ||||||||||||||||||||||||||||
| SF5400-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 50 ns | 50 ns | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||
| BYT56K-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 3A | 1.4V | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 80A | 800V | 100 ns | 100 ns | Avalanche | 800V | 3A | 1 | 1.5A | 5μA @ 800V | 1.4V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||
| SR10150-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/comchiptechnology-sr10150g-datasheets-7223.pdf | TO-220-3 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | TO-220AC | Schottky | 150V | 10A | 175A | 1 | 150V | 500μA @ 150V | 950mV @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| AU3PJ-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | AU3PJ | 3 | Common Anode | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 45A | TO-277A | 75 ns | Avalanche | 600V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 600V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | |||||||||||||||||||||||||||||||
| 1N3882 | GeneSiC Semiconductor | $6.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3882-datasheets-0028.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3882 | DO-4 | 6A | 90A | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 300V | 300V | 200 ns | 200 ns | Standard | 300V | 6A | 300V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SD060SE45B.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 180pF @ 5V 1MHz | 45V | 300μA @ 45V | 510mV @ 3A | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV98-100-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv98200tr-datasheets-9510.pdf | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 4A | 70A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 70A | 100V | 35 ns | 35 ns | Avalanche | 100V | 4A | 1 | 4A | 10μA @ 100V | 1.1V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||
| SS10P3-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-ss10p4m387a-datasheets-1623.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREEWHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS10P3 | 3 | Common Anode | 1 | 10A | 560mV | 280A | 800μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | 30V | 280A | TO-277A | Schottky | 30V | 10A | 1 | 800μA @ 30V | 560mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||
| V12P45HM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p45m386a-datasheets-0026.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 1mA @ 45V | 580mV @ 12A | 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV98-100-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv98200tr-datasheets-9510.pdf | 2A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 4A | 1.1V | 70A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 70A | 100V | 35 ns | 35 ns | Avalanche | 100V | 4A | 1 | 4A | 10μA @ 100V | 1.1V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||
| VS-1N3879R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3879 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 50V | 300 ns | 300 ns | Standard, Reverse Polarity | 50V | 6A | 1 | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| NRVHP820LFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nhp820lfst1g-datasheets-9962.pdf | SOT-1023, 4-LFPAK | 4 | 33 Weeks | yes | FREE WHEEELING DIODE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G4 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 1μA | 200V | 35ns | Standard | 175A | 1 | 8A | 200V | 1μA @ 200V | 1V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| BYW172F-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw172dtr-datasheets-7179.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 300V | 100A | 300V | 100 ns | 100 ns | Avalanche | 300V | 3A | 1 | 3A | 1μA @ 300V | 1.5V @ 9A | -55°C~175°C | ||||||||||||||||||||||||||
| VS-90EPF06L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs90apf06lm3-datasheets-6950.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | Standard | 600V | 100μA @ 600V | 1.3V @ 90A | 90A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR15300D1-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr15300d113-datasheets-7249.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300V | 10μA | Super Barrier | 110A | 1 | 15A | 300V | 10μA @ 300V | 1.01V @ 15A | 15A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| HER605G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU3PD-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | DUAL | FLAT | AU3PD | 3 | Common Anode | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 45A | TO-277A | 75 ns | Avalanche | 200V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 200V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | |||||||||||||||||||||||||||||||
| AU3PG-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | DUAL | FLAT | AU3PG | 3 | Common Anode | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 45A | TO-277A | 75 ns | Avalanche | 400V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 400V | 1.9V @ 3A | 1.7A DC | -55°C~175°C |
