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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| DHG30I600PA | IXYS | $7.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhg30i600pa-datasheets-5667.pdf | TO-220-2 | 10.66mm | 9.66mm | 4.82mm | Lead Free | 2 | 28 Weeks | 2.299997g | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | unknown | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | 3.14V | 200A | 50μA | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 50μA | 600V | 200A | 35 ns | 35 ns | Standard | 600V | 30A | 1 | 50μA @ 600V | 2.37V @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-8EWF06STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf02sm3-datasheets-5703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREEWHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 100μA | 600V | 150A | TO-252AA | 55 ns | Standard | 600V | 8A | 1 | 8A | 100μA @ 600V | 1.2V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-12FL20S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | 12A | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 12A | 180A | CATHODE | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 200V | 500 ns | 500 ns | Standard | 200V | 12A | 1 | 50μA @ 200V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-STPS40L15CW-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vsstps40l15cwpbf-datasheets-9143.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | unknown | SINGLE | NOT SPECIFIED | STPS40L15C | 125°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10000μA | TO-247AC | Schottky | 15V | 40A | 700A | 1 | 2000pF @ 5V 1MHz | 15V | 10mA @ 15V | 520mV @ 40A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4153-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/337 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n41531-datasheets-2201.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/337 | WIRE | Single | 1 | Qualified | 150mA | 880mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 75V | 2A | 4 ns | Standard | 2pF @ 0V 1MHz | 50nA @ 50V | 880mV @ 20mA | 150mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPU3006HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsapu3006hn3-datasheets-5515.pdf | TO-247-2 | 2 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | AEC-Q101 | Single | 1 | 220A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 220A | 600V | 45 ns | 30 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| C3D06060G-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 7 Weeks | No | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 295pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.7V @ 6A | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPU04HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs60epu04hn3-datasheets-5623.pdf | TO-247-3 | 2 | 14 Weeks | EAR99 | unknown | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-247AC | 85 ns | Standard | 400V | 60A | 600A | 1 | 400V | 50μA @ 400V | 1.25V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3883 | Vishay Semiconductor Diodes Division | $5.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3883 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 6A | 1.4V | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 400V | 400V | 300 ns | 300 ns | Standard | 400V | 6A | 1 | 6A | 15μA @ 400V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-6F10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 100V | Standard | 100V | 6A | 1 | 6A | 12mA @ 100V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPU6006L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-247-2 | 2 | 7 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 45 ns | Standard | 600V | 30A | 600A | 1 | 60A | 600V | 30μA @ 600V | 2V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3211R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3211 | Single | 1 | O-MUPM-D1 | 15A | 297A | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 297A | 10mA | 300V | 297A | 300V | Standard, Reverse Polarity | 300V | 15A | 1 | 10mA @ 300V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-6FR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 6A | 1.1V | 167A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 167A | 12mA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 6A | 1 | 6A | 1000V | 12mA @ 1000V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| IDK08G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk08g65c5xtma2-datasheets-5633.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 2 | EAR99 | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 76W | 650V | 1400μA | 0ns | Silicon Carbide Schottky | 60A | 1 | 250pF @ 1V 1MHz | 650V | 1.8V @ 8A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3212R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3212 | Single | 1 | O-MUPM-D1 | 15A | 1.5V | 297A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 297A | 10mA | 400V | 400V | Standard, Reverse Polarity | 400V | 15A | 1 | 10mA @ 400V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA06TB120PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vshfa06tb120pbf-datasheets-5639.pdf | TO-220-2 | 10.4902mm | 15.24mm | 4.6482mm | Lead Free | 2 | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | HFA06TB120 | 3 | Single | 62.5W | 1 | Rectifier Diodes | 6A | 850mV | 80A | CATHODE | EFFICIENCY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 5μA | 1.2kV | 80A | 1.2kV | 80 ns | 80 ns | Standard | 1.2kV | 6A | 1 | 6A | 1200V | 5μA @ 1200V | 3V @ 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| DSP45-18A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 20 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | 8541.10.00.80 | IEC-60747 | NO | SINGLE | 175°C | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 270W | 1800V | 40μA | Standard | 440A | 1 | 45A | 18pF @ 400V 1MHz | 1800V | 40μA @ 1800V | 1.26V @ 45A | 45A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5616/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Tape & Reel (TR) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 400V | 500nA @ 400V | 1.3V @ 3A | 1A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FL40S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | DO-203AA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | Standard | 400V | 50μA @ 400V | 1.4V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3891R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | 1N3891 | Single | 1 | O-MUPM-D1 | 12A | 1.4V | 180A | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 180A | 200V | 300 ns | 300 ns | Standard, Reverse Polarity | 200V | 12A | 1 | 25μA @ 200V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| HSM830G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm845je3tr13-datasheets-3975.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | HSM830 | Single | DO-215AB | 8A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 30V | 350A | Schottky | 30V | 8A | 30V | 250μA @ 30V | 620mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-APU6006-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-vsepu6006n3-datasheets-4412.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 14 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 60A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 600V | TO-247AC | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| FFSP05120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | RoHS Compliant | 2016 | /files/onsemiconductor-ffsp05120a-datasheets-5571.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 2 days ago) | yes | PD-CASE | 175°C | -55°C | Single | 1 | R-PSFM-T2 | 9.2A | EFFICIENCY | No Recovery Time > 500mA (Io) | 94W | 1200V | 42A | 1.2kV | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 1200V | 200μA @ 1200V | 1.75V @ 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs20etf04fpm3-datasheets-5526.pdf | TO-220-2 Full Pack | 10.6mm | 8.9mm | 4.8mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 20ETF06 | Single | NOT APPLICABLE | 1 | 20A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 160 ns | Standard | 600V | 20A | 1 | 100μA @ 600V | 1.67V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| IDL08G65C5XUMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/infineontechnologies-idl08g65c5xuma2-datasheets-5587.pdf | 4-PowerTSFN | 18 Weeks | 4 | EAR99 | Halogen Free | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 250pF @ 1V 1MHz | 650V | 140μA @ 650V | 1.7V @ 8A | 8A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDC10D120H8X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/infineontechnologies-sidc10d120h8x1sa2-datasheets-5589.pdf | Die | 1 | 12 Weeks | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | S-XUUC-N1 | SINGLE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 27μA | Standard | 1 | 1200V | 27μA @ 1200V | 1.97V @ 7.5A | 15A DC | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS380J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs360je3tr13-datasheets-4385.pdf | DO-214AB, SMC | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | UFS380 | Single | DO-214AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 60 ns | Standard | 800V | 3A | 800V | 10μA @ 800V | 1.2V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15DQ120BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf&product=microsemicorporation-apt15dq120bg-6004289 | 1.2kV | 15A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 29 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 15A | 15A | 2.8V | 110A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 110A | 240 ns | 21 ns | Standard | 1.2kV | 15A | 1 | 1.2kV | 1200V | 100μA @ 1200V | 3.3V @ 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-APU6006L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-247-3 | 3 | 7 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 110 ns | Standard | 600V | 60A | 600A | 1 | 600V | 30μA @ 600V | 1.5V @ 60A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP0865A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp0865a-datasheets-5597.pdf | TO-220-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 98W | 650V | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 49A | 1 | 13A | 463pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 8A | 13A DC | -55°C~175°C |
