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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5806E3/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5802-datasheets-0547.pdf | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 975mV @ 2.5A | 2.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3890 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | 1N3890 | Single | 1 | O-MUPM-D1 | 12A | 1.4V | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 180A | 100V | 300 ns | 300 ns | Standard | 100V | 12A | 1 | 25μA @ 100V | 1.4V @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| FR6KR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishay-vs30apf12pbf-datasheets-8930.pdf | TO-247-3 | 3 | 8 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | 1.41V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 1.2kV | 100μA | TO-247AC | 450 ns | Standard | 1.2kV | 30A | 1 | 1200V | 100μA @ 1200V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| FR6MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 6A | 1 | 6A | 1000V | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| CDLL645 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll645-datasheets-5722.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 400mA | ISOLATED | 100 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 225V | 5A | Standard | 225V | 400mA | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-50PFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 830A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 50A | 1 | 1200V | 1.4V @ 125A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| S25G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25g-datasheets-8936.pdf | DO-203AA, DO-4, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 25A | 373A | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 400V | Standard | 400V | 25A | 400V | 10μA @ 50V | 1.1V @ 25A | 25A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishay-vs30apf06pbf-datasheets-8937.pdf | TO-247-3 | 3 | 8 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | 1.41V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 600V | 100μA | TO-247AC | 160 ns | Standard | 600V | 30A | 1 | 100μA @ 600V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-60EPF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-2 | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | 60A | 830A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400V | 830A | 400V | 180 ns | 180 ns | Standard | 400V | 60A | 1 | 100μA @ 400V | 1.3V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| DHG60I1200HA | IXYS | $43.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-dhg60i1200ha-datasheets-5732.pdf | TO-247-3 | Lead Free | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 3.06V | 430A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125μA | 500A | 1.2kV | 200 ns | 75 ns | Standard | 1.2kV | 60A | 1 | 1200V | 125μA @ 1200V | 2.32V @ 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| S25D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25d-datasheets-8943.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 175°C | 1 | O-MUPM-D1 | 25A | 373A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard | 200V | 25A | 1 | 10μA @ 50V | 1.1V @ 25A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 200V | 200 ns | 200 ns | Standard | 200V | 6A | 200V | 50μA @ 200V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5616 | Microsemi Corporation | $6.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||
| S25QR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25qr-datasheets-8923.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 373A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 25A | 1 | 1200V | 10μA @ 50V | 1.1V @ 25A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-12FL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 12A | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard | 600V | 12A | 600V | 50μA @ 600V | 1.4V @ 12A | 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50PF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 50A | 1.4V | 830A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 830A | 9mA | 1.2kV | 830A | 1.2kV | Standard | 1.2kV | 50A | 1 | 1200V | 1.4V @ 125A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||
| S25J | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25j-datasheets-8928.pdf | DO-203AA, DO-4, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 25A | 373A | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 600V | 600V | Standard | 600V | 25A | 600V | 10μA @ 50V | 1.1V @ 25A | 25A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL1A60 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 1A | ISOLATED | 220 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | Schottky | 60V | 1A | 1A | 0.9pF @ 5V 1MHz | 100μA @ 60V | 690mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||
| VS-1N3210R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3210 | Single | 1 | O-MUPM-D1 | 15A | 1.5V | 297A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 200V | Standard, Reverse Polarity | 200V | 15A | 1 | 10mA @ 200V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-20ETF02FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs20etf04fpm3-datasheets-5526.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | NOT APPLICABLE | 20ETF02 | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AC | 160 ns | Standard | 200V | 20A | 300A | 1 | 200V | 100μA @ 200V | 1.67V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| S25MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25mr-datasheets-8913.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 25A | 373A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 25A | 1 | 1000V | 10μA @ 50V | 1.1V @ 25A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPU06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishay-vs60apu06pbf-datasheets-8165.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 11 Weeks | 2 | EAR99 | Tin | No | 8541.10.00.80 | e3 | 2 | Single | 1 | Rectifier Diodes | 60A | 1.68V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 600V | 600A | 600V | 45 ns | 45 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.68V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-1N3891 | Vishay Semiconductor Diodes Division | $5.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3891 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 12A | 1.4V | 180A | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 300 ns | 300 ns | Standard | 200V | 12A | 1 | 25μA @ 200V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-50PFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 830A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | Standard, Reverse Polarity | 800V | 50A | 1 | 1.4V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||
| S25K | GeneSiC Semiconductor | $7.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25k-datasheets-8921.pdf | DO-203AA, DO-4, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 25A | 373A | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 800V | 800V | Standard | 800V | 25A | 800V | 10μA @ 50V | 1.1V @ 25A | 25A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3892R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3892 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 300V | 300 ns | 300 ns | Standard, Reverse Polarity | 300V | 12A | 1 | 25μA @ 300V | 1.4V @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6643 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | 2 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | AXIAL | WIRE | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | O-LALF-W2 | SINGLE | ISOLATED | SILICON | 50V | RECTIFIER DIODE | 0.3A | 0.006μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP40-03AS-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | AVALANCHE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT,PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 175W | 300V | 5μA | 35ns | Standard | 340A | 1 | 40A | 50pF @ 150V 1MHz | 300V | 5μA @ 300V | 1.46V @ 40A | 40A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SICRB101200TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 640pF @ 0V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C |
