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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4946 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | Contains Lead | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Single | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 600V | 15A | 250 ns | Standard | 600V | 1A | 25pF @ 12V 1MHz | 600V | 1μA @ 600V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP45-12AZ-TUB | IXYS | $8.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 28 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 270W | 1200V | 40μA | Standard | 440A | 1 | 45A | 18pF @ 400V 1MHz | 1200V | 40μA @ 1200V | 1.26V @ 45A | 45A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FL40S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | 12A | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 12A | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 400V | 500ns | 500 ns | Standard | 400V | 12A | 400V | 50μA @ 400V | 1.4V @ 12A | 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80PFR140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr140w-datasheets-5654.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 80A | 1.25kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 1.25kA | 1.4kV | Standard, Reverse Polarity | 1.4kV | 80A | 1 | 1400V | 1.46V @ 220A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1183R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1183 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 400A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 50V | Standard, Reverse Polarity | 50V | 35A | 1 | 10mA @ 50V | 1.7V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||
| VS-1N3893R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3893 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 300 ns | 300 ns | Standard, Reverse Polarity | 400V | 12A | 1 | 25μA @ 400V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard | 600V | 6A | 600V | 50μA @ 600V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5617 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1A | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 400V | 1A | 1A | 35pF @ 12V 1MHz | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-95PF80W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 2.09kA | 800V | Standard | 800V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3214 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | 15A | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3214 | Single | 1 | O-MUPM-D1 | 15A | 250A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 600V | 297A | 600V | Standard | 600V | 15A | 1 | 10mA @ 600V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-16FL10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 16A | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 100V | 200 ns | 200 ns | Standard | 100V | 16A | 100V | 50μA @ 100V | 1.4V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5552 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 5A | 1.2V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-50PF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pfr140-datasheets-5691.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | PIN/PEG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-P1 | 595A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard | 1.6kV | 50A | 1 | 1600V | 1.5V @ 125A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50PF140W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pfr140-datasheets-5691.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 50A | 595A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 595A | 1.4kV | Standard | 1.4kV | 50A | 1 | 1400V | 1.5V @ 125A | -55°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 16A | 600V | 50μA @ 600V | 1.4V @ 16A | 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15DQ100BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1kV | 15A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | yes | EAR99 | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 15A | 15A | 3.06V | 80A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1kV | 80A | 235 ns | 235 ns | Standard | 1kV | 15A | 1 | 1kV | 1000V | 100μA @ 1000V | 3V @ 15A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| VS-6FLR80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 6A | 800V | 50μA @ 800V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 40A | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | 595A | 600V | Standard | 600V | 40A | 1 | 9mA @ 600V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-2 | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 830A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200V | 830A | 200V | 180 ns | 180 ns | Standard | 200V | 60A | 1 | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-1N1186RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1186 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 800A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 200V | 800A | 200V | Standard, Reverse Polarity | 200V | 40A | 1 | 2.5mA @ 200V | 1.3V @ 126A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||
| VS-60EPF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishay-vs60apf12m3-datasheets-8018.pdf | TO-247-2 | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 2 | Common Anode | 1 | Rectifier Diodes | 60A | 1.4V | 700A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 830A | 1kV | 480 ns | 480 ns | Standard | 1kV | 60A | 1 | 1000V | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-1N1185R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1185 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 400A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 150V | Standard, Reverse Polarity | 150V | 35A | 500A | 1 | 10mA @ 150V | 1.7V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N4532 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4532-datasheets-5764.pdf | DO-204AG, DO-34, Axial | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 75V | 0.1μA | 30ns | Standard | 0.5A | 0.125A | 50V | 100nA @ 50V | 1V @ 10mA | 125mA | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3893 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-vs1n3891r-datasheets-5646.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | 1N3893 | Single | 1 | O-MUPM-D1 | 12A | 1.4V | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 25μA | 400V | 180A | 400V | 300 ns | 300 ns | Standard | 400V | 12A | 1 | 25μA @ 400V | 1.4V @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5551 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 5A | 1.2V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 400V | 3A | 1 | 5A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-6FLR20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 200V | 200ns | 200 ns | Standard, Reverse Polarity | 200V | 6A | 200V | 50μA @ 200V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5618 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| VS-30APF12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishay-vs30apf12pbf-datasheets-8930.pdf | TO-247-3 | 3 | 8 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | 1.41V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 1.2kV | 100μA | TO-247AC | 450 ns | Standard | 1.2kV | 30A | 1 | 1200V | 100μA @ 1200V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| FR6MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 6A | 1 | 6A | 1000V | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| CDLL645 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll645-datasheets-5722.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 400mA | ISOLATED | 100 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 225V | 5A | Standard | 225V | 400mA | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C |
