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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CDBJSC51200-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjsc51200g-datasheets-5832.pdf | TO-220-2 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 475pF @ 0V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 5A | 5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR10S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 420A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 500 ns | 500 ns | Standard, Reverse Polarity | 100V | 40A | 500A | 1 | 100μA @ 100V | 1.95V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5806US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | Single | D-5A | 875mV | Fast Recovery =< 500ns, > 200mA (Io) | 35A | 25ns | Standard | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 975mV @ 2.5A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60S20SG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60s20bg-datasheets-5782.pdf | 200V | 75A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.08mm | 13.99mm | Lead Free | 2 | 26 Weeks | 260.39037mg | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | PURE MATTE TIN | Standard | GULL WING | 245 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 75A | 75A | 900mV | 600A | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 200V | 600A | 55 ns | 55 ns | Schottky | 200V | 75A | 1 | 200V | 1mA @ 200V | 900mV @ 60A | -55°C~150°C | ||||||||||||||||||||||||||||
| JAN1N5620 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| VS-6FL60S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 200 ns | 200 ns | Standard | 600V | 6A | 600V | 50μA @ 600V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50PFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pfr140-datasheets-5691.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | PIN/PEG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-P1 | 595A | ANODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 50A | 1 | 1600V | 1.5V @ 125A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4942 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | Contains Lead | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | 1.3V | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 200V | 15A | 150 ns | Standard | 200V | 1A | 200V | 1μA @ 200V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR120W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | 2.09kA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 95A | 1 | 1200V | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB0865A | ON Semiconductor | $4.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ffsb0865a-datasheets-5806.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 463pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 8A | 15.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA30IM1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 1600V | 40μA | Standard | 275A | 1 | 30A | 10pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.29V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5817 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -55°C | Non-RoHS Compliant | 1997 | 10 Weeks | 2 | Single | 650mV | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25M | GeneSiC Semiconductor | $6.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25m-datasheets-9016.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 25A | 373A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 25A | 1 | 1000V | 10μA @ 50V | 1.1V @ 25A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 6A | 600V | 50μA @ 600V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-12B | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | AVALANCHE | TO-247-2 | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 330W | 1200V | 200μA | 65ns | Standard | 500A | 1 | 30pF @ 600V 1MHz | 1200V | 200μA @ 1200V | 3.25V @ 60A | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 800V | 500 ns | 500 ns | Standard | 800V | 6A | 800V | 50μA @ 800V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PF120W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | 2.09kA | 1.2kV | Standard | 1.2kV | 95A | 1 | 1200V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||
| VS-95PFR40W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | 2.09kA | 400V | Standard, Reverse Polarity | 400V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2-12A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ds212a-datasheets-5798.pdf | Axial | 2 | 16 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | Nickel (Ni) | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.25V | 120A | 2mA | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 127A | Standard | 1.2kV | 3.6A | 1 | 1200V | 2mA @ 1200V | 1.25V @ 7A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5552/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | Yes | Single | B, Axial | 5A | Standard Recovery >500ns, > 200mA (Io) | 1μA | 600V | 100A | 2 μs | Standard | 600V | 1μA @ 600V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL40S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | 6A | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 400V | 200 ns | 200 ns | Standard | 400V | 6A | 400V | 50μA @ 400V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s25b-datasheets-9009.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 373A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard | 100V | 25A | 1 | 10μA @ 50V | 1.1V @ 25A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 6A | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard | 600V | 6A | 600V | 50μA @ 600V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5617 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1A | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 400V | 1A | 1A | 35pF @ 12V 1MHz | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-95PF80W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 2.09kA | 800V | Standard | 800V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3214 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | 15A | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3214 | Single | 1 | O-MUPM-D1 | 15A | 250A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 600V | 297A | 600V | Standard | 600V | 15A | 1 | 10mA @ 600V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-16FL10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 16A | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 100V | 200 ns | 200 ns | Standard | 100V | 16A | 100V | 50μA @ 100V | 1.4V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs30apf10m3-datasheets-7959.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 8 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 6mA | 1kV | TO-247AC | 95 ns | Standard | 1kV | 30A | 1 | 1000V | 100μA @ 1000V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-12FLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 12A | 600V | 50μA @ 600V | 1.4V @ 12A | 12A | -65°C~150°C |
