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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| UG4B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 4A | 950mV | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 30 ns | 30 ns | Standard | 100V | 4A | 1 | 4A | 20pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| CMS07(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | SOD-128 | 12 Weeks | Silver, Tin | CMS07 | Single | M-FLAT (2.4x3.8) | 40A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 30V | 40A | Schottky | 30V | 2A | 30V | 500μA @ 30V | 450mV @ 2A | 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBYV28-150-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-sbyv2850e354-datasheets-4754.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | 1 | Rectifier Diodes | 3.5A | 1.1V | 90A | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 90A | 150V | 20 ns | 20 ns | Standard | 150V | 3.5A | 1 | 20pF @ 4V 1MHz | 5μA @ 150V | 1.1V @ 3.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| CFRC307-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/comchiptechnology-cfrc303g-datasheets-5064.pdf | DO-214AB, SMC | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | CFRC307 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | 100A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 1kV | 500 ns | 500 ns | Standard | 1kV | 3A | 3A | 1000V | 5μA @ 1000V | 1.3V @ 3A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AB01BV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-ab01bv1-datasheets-0309.pdf | Axial | 12 Weeks | EAR99 | 22 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | Standard | 800V | 500mA | 800V | 10μA @ 800V | 2V @ 500mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR340SHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 400V | 10μA @ 400V | 1.25V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBB3200LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/comchiptechnology-cdbb3150lrhf-datasheets-4751.pdf | DO-214AA, SMB | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 500μA | 200V | Schottky | 125A | 1 | 3A | 250pF @ 4V 1MHz | 200V | 500μA @ 200V | 850mV @ 3A | 3A | -50°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RS2KA-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-rs2ma13f-datasheets-1478.pdf | 800V | 1.5A | DO-214AC, SMA | 30pF | 4.6mm | 2.1mm | 2.92mm | Exempt | 2 | 13 Weeks | 64.013223mg | 2 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | RS2K | 2 | Single | 40 | 1 | Rectifier Diodes | 1.5A | 1.5A | 1.3V | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 500 ns | 500 ns | Standard | 800V | 1.5A | 1 | 800V | 30pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1.5A | -65°C~150°C | ||||||||||||||||||||||||||||||
| BYT51K-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 50A | 800V | 4 μs | 4 μs | Avalanche | 800V | 1.5A | 1A | 1μA @ 800V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SMAJ5817E3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG4C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 4A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 150A | 150V | 30 ns | 30 ns | Standard | 150V | 4A | 1 | 4A | 20pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 6A20G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK310BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMEG040V030EPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-pmeg040v030epdz-datasheets-5326.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE | AEC-Q101; IEC-60134 | YES | DUAL | FLAT | 3 | 175°C | 1 | R-PDSO-F3 | 3A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 40V | 120μA | 13ns | Schottky | 1 | 395pF @ 1V 1MHz | 40V | 120μA @ 40V | 490mV @ 3A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54K-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | 1.25A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 1.5V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 100 ns | 100 ns | Avalanche | 800V | 1.25A | 0.75A | 5μA @ 800V | 1.5V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| BYT51M-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | No | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 1.5A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| BYM13-50HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM13-50 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 30A | Schottky | 50V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 50V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| BYV27-050-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-byv27100tr-datasheets-6917.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | 2A | 1.07V | 50A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 50A | 50V | 25 ns | 25 ns | Avalanche | 55V | 2A | 1 | 2A | 1μA @ 55V | 1.07V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| BYT53C-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishay-byt53ctap-datasheets-5936.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 50A | 150V | 50 ns | 50 ns | Avalanche | 150V | 1.9A | 1 | 5μA @ 150V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| ES3D-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 200V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 200V | 10μA @ 200V | 900mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BYW35-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 2A | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 50A | 500V | 200 ns | 200 ns | Avalanche | 500V | 2A | 1 | 2A | 5μA @ 500V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| SBR8E45P5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-sbr8e45p57-datasheets-1054.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350μA | Super Barrier | 45V | 5A | 140A | 1 | 8A | 45V | 280μA @ 45V | 600mV @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| BYT53C-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 50A | 150V | 50 ns | 50 ns | Avalanche | 150V | 1.9A | 1 | 5μA @ 150V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| BYM13-50-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM13-50 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 700mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 30A | Schottky | 50V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 50V | 700mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYM13-60HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM13-60 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 30A | Schottky | 60V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 60V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| BYW35-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 50A | 500V | 200 ns | 200 ns | Avalanche | 500V | 2A | 1 | 2A | 5μA @ 500V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| ES3B-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 100V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 100V | 10μA @ 100V | 900mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-60/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | 60V | 1A | DO-213AB, MELF | 80pF | Contains Lead | 2 | 21 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | Standard | END | WRAP AROUND | NOT SPECIFIED | SGL41-60 | 2 | NOT SPECIFIED | 1 | Not Qualified | 1A | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 1A | 80pF @ 4V 1MHz | 500μA @ 60V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| SS3P3LHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss3p4lm386a-datasheets-5912.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | TO-277A | Schottky | 30V | 3A | 150A | 1 | 3A | 30V | 250μA @ 30V | 470mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BYV27-050-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-byv27100tr-datasheets-6917.pdf | 2A | SOD-57, Axial | Lead Free | 2 | 12 Weeks | Unknown | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 2A | 1.07V | 50A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 1μA | 50V | 50A | 50V | 25 ns | 25 ns | Avalanche | 55V | 2A | 1 | 2A | 1μA @ 55V | 1.07V @ 3A | -55°C~175°C |
