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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SK320AHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AC, SMA | 20 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 100μA @ 200V | 950mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPL-D2V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjpld2vl-datasheets-0814.pdf | 2-SMD, J-Lead | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 200V | 1A | 200V | 25μA @ 200V | 980mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS32 R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 500μA | Schottky | 100A | 1 | 3A | 20V | 500μA @ 20V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| AK 04V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak04v0-datasheets-5128.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 1A | 40V | 5mA @ 40V | 550mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SS29HE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss210e352t-datasheets-4809.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | AEC-Q101 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 30μA | Schottky | 75A | 1 | 1.5A | 90V | 30μA @ 90V | 950mV @ 3A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| SJPB-H4V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-sjpbh4vr-datasheets-9402.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | EAR99 | LOW NOISE | 8541.10.00.80 | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | Schottky | 40V | 2A | 50A | 1 | 2A | 40V | 200μA @ 40V | 550mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| ES2CHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 50A | 20 ns | Standard | 150V | 2A | 1 | 2A | 18pF @ 4V 1MHz | 10μA @ 50V | 900mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| SS25HE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | Schottky | 50V | 2A | 75A | 1 | 2A | 50V | 400μA @ 50V | 700mV @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| BYT54G-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 100 ns | 100 ns | Avalanche | 400V | 1.25A | 0.75A | 5μA @ 400V | 1.5V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| BYT52G-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.4A | 1.3V | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 200 ns | 200 ns | Avalanche | 400V | 1.4A | 0.85A | 5μA @ 400V | 1.3V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| BYM13-40HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | BYM13-40 | 2 | Single | 1 | Rectifier Diodes | 1A | 500mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 30A | Schottky | 40V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||
| 6A60G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| EM 1BV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em1bv1-datasheets-3535.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1A | 800V | 20μA @ 800V | 1.05V @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SE40PWDC-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pwjcm3i-datasheets-4976.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 14pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.1V @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF31G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 5μA | 35ns | Standard | 125A | 1 | 3A | 80pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYX84TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 50A | 600V | 4 μs | 4 μs | Avalanche | 600V | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1μA @ 600V | 1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||
| MUR360SHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 10μA @ 600V | 1.25V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3J V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 30pF @ 4V 1MHz | 600V | 10μA @ 600V | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3C-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 150V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 150V | 10μA @ 150V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| SS33 R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 500μA | Schottky | 100A | 1 | 3A | 30V | 500μA @ 30V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| NRVB560MFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-mbr560mfst3g-datasheets-9944.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW POWER LOSS | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | FLAT | 5 | Single | 1 | 5A | 650mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 15μA | 60V | 100A | Schottky | 60V | 5A | 1 | 5A | 60V | 150μA @ 60V | 780mV @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||
| SS2003M-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ss2003mtlw-datasheets-5123.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 2 Weeks | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | YES | DUAL | 6 | 125°C | Single | 1 | Rectifier Diodes | 2A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10A | 1250μA | 20ns | Schottky | 30V | 2A | 1 | 2A | 75pF @ 10V 1MHz | 1.25mA @ 15V | 400mV @ 2A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||
| EG01CW | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-eg01cv1-datasheets-9191.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100 ns | Standard | 1kV | 500mA | 0.5A | 1000V | 50μA @ 1000V | 3.3V @ 500mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| AK 04V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak04v0-datasheets-5128.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 5mA @ 40V | 550mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AK 06V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak06v1-datasheets-5137.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 0.7A | 60V | 1mA @ 60V | 620mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STD12100TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 660pF @ 5V 1MHz | 100V | 300μA @ 100V | 750mV @ 12A | 12A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM 2BV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em2bv1-datasheets-0219.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 10μA @ 800V | 920mV @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM13-30HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM13-30 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 30A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||
| SS33 V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 500μA @ 30V | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RB168M150DDTR | ROHM Semiconductor | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rb168m150ddtr-datasheets-5046.pdf | SOD-123F | 40 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 20μA @ 150V | 840mV @ 1A | 1A | 150°C Max |
