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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MUR340S R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 400V | 10μA @ 400V | 1.25V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPB-H9V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-sjpbh9vl-datasheets-9353.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 2A | 90V | 200μA @ 90V | 850mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UG58G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30μA | 20ns | Standard | 65A | 1 | 5A | 600V | 30μA @ 600V | 2.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| EM 2V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em2v1-datasheets-9095.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 10μA @ 400V | 920mV @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3A-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 50V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 50V | 10μA @ 50V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||
| EP01CW | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ep01cv1-datasheets-0501.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 200 ns | Standard | 1kV | 200mA | 0.2A | 1000V | 5μA @ 1000V | 4V @ 200mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| ES3FHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 30pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RBR3L30ATE25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/rohm-rbr3l30ate25-datasheets-5820.pdf | DO-214AC, SMA | 2 | 39 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | DUAL | C BEND | 260 | 150°C | 10 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | Schottky | 30V | 3A | 30A | 1 | 3A | 30V | 50μA @ 30V | 580mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||
| EM 2AV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em2av1-datasheets-9104.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 10μA @ 600V | 920mV @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A20G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CFRC303-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cfrc303g-datasheets-5064.pdf | DO-214AB, SMC | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | Standard | 200V | 3A | 100A | 3A | 200V | 5μA @ 200V | 1.3V @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||
| SF38G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RB168M150DDTR | ROHM Semiconductor | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rb168m150ddtr-datasheets-5046.pdf | SOD-123F | 40 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 20μA @ 150V | 840mV @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| SS33HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 20 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 125°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 0.5μA | Schottky | 100A | 1 | 3A | 30V | 500μA @ 30V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||
| SMAJ5818E3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK315BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AK 09V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ak09v0-datasheets-5074.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 1mA @ 90V | 810mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE40PWBC-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pwjcm3i-datasheets-4976.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 14pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A100G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EG01CV0 | Sanken | $4.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-eg01cv1-datasheets-9191.pdf | Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | Standard | 1kV | 500mA | 1000V | 50μA @ 1000V | 3.3V @ 500mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SS32HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 20 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 125°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20V | 0.5μA | Schottky | 100A | 1 | 3A | 20V | 500μA @ 20V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||
| BY458TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 140°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by448tr-datasheets-0720.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 2A | 30A | ISOLATED | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3μA | 1.2kV | 30A | 1.2kV | 2 μs | 20 μs | Avalanche | 1.2kV | 2A | 1 | 2A | 1200V | 3μA @ 1200V | 1.6V @ 3A | 140°C Max | |||||||||||||||||||||
| VSSC8L45-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssc8l45m39at-datasheets-0482.pdf | DO-214AB, SMC | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1850μA | Schottky | 45V | 3.8A | 140A | 1 | 4.9A | 1068pF @ 4V 1MHz | 1.6mA @ 45V | 430mV @ 3.5A | 3.8A DC | -40°C~150°C | ||||||||||||||||||||||||||||
| SK320BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 100μA @ 200V | 950mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS23HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | Schottky | 30V | 2A | 75A | 1 | 2A | 30V | 400μA @ 30V | 500mV @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||
| BYV14-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv16tap-datasheets-0526.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.5V | 40A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 40A | 600V | 300 ns | 300 ns | Avalanche | 600V | 1.5A | 1 | 5μA @ 600V | 1.5V @ 1A | -55°C~175°C | |||||||||||||||||||||
| S10GC V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 400V | 1μA @ 400V | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT53B-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 50 ns | 50 ns | Avalanche | 100V | 1.9A | 1 | 5μA @ 100V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||
| 6A100G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| SS36-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 100A | 1 | 3A | 60V | 500μA @ 60V | 750mV @ 3A | -55°C~150°C |
