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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SF38G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RB168M150DDTR | ROHM Semiconductor | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rb168m150ddtr-datasheets-5046.pdf | SOD-123F | 40 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 20μA @ 150V | 840mV @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SS33HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 20 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 125°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 0.5μA | Schottky | 100A | 1 | 3A | 30V | 500μA @ 30V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||
| SMAJ5818E3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK315BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AK 09V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ak09v0-datasheets-5074.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 1mA @ 90V | 810mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE40PWBC-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pwjcm3i-datasheets-4976.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 14pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A100G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EG01CV0 | Sanken | $4.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-eg01cv1-datasheets-9191.pdf | Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | Standard | 1kV | 500mA | 1000V | 50μA @ 1000V | 3.3V @ 500mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A20G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR340S R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 400V | 10μA @ 400V | 1.25V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPB-H9V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-sjpbh9vl-datasheets-9353.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 2A | 90V | 200μA @ 90V | 850mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG58G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30μA | 20ns | Standard | 65A | 1 | 5A | 600V | 30μA @ 600V | 2.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| EM 2V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em2v1-datasheets-9095.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 10μA @ 400V | 920mV @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3A-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 50V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 50V | 10μA @ 50V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||
| EP01CW | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ep01cv1-datasheets-0501.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 200 ns | Standard | 1kV | 200mA | 0.2A | 1000V | 5μA @ 1000V | 4V @ 200mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| ES3FHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 30pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RBR3L30ATE25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/rohm-rbr3l30ate25-datasheets-5820.pdf | DO-214AC, SMA | 2 | 39 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | DUAL | C BEND | 260 | 150°C | 10 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | Schottky | 30V | 3A | 30A | 1 | 3A | 30V | 50μA @ 30V | 580mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||
| EM 2AV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em2av1-datasheets-9104.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 10μA @ 600V | 920mV @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A20G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS36-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 100A | 1 | 3A | 60V | 500μA @ 60V | 750mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||
| MUR340SB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur340sbr5g-datasheets-1487.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 45pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.25V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A40G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| FESF16BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 250A | 100V | 35 ns | 35 ns | Standard | 100V | 16A | 1 | 10μA @ 100V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||
| RB068L-60TE25 | ROHM Semiconductor | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2012 | Lead Free | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | SILICON | 2μA | DO-214AC | 0.68V | RECTIFIER DIODE | 60V | 2A | 90A | 1 | 2A | ||||||||||||||||||||||||||||||||||||||
| FESF16GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 250A | 400V | 50 ns | 50 ns | Standard | 400V | 16A | 1 | 10μA @ 400V | 1.3V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||
| SB580E-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-sb580eg-datasheets-5041.pdf | DO-201AD, Axial | 12 Weeks | yes | SB580 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 5A | 500pF @ 4V 1MHz | 80V | 500μA @ 80V | 850mV @ 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A60G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| UG54G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 14 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 200V | 10μA @ 200V | 1.05V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS32HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 20 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 125°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20V | 0.5μA | Schottky | 100A | 1 | 3A | 20V | 500μA @ 20V | 500mV @ 3A | 3A | -55°C~125°C |
