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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYW35-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 2A | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 50A | 500V | 200 ns | 200 ns | Avalanche | 500V | 2A | 1 | 2A | 5μA @ 500V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| SBR8E45P5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-sbr8e45p57-datasheets-1054.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350μA | Super Barrier | 45V | 5A | 140A | 1 | 8A | 45V | 280μA @ 45V | 600mV @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| BYT53C-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 50A | 150V | 50 ns | 50 ns | Avalanche | 150V | 1.9A | 1 | 5μA @ 150V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||
| BYM13-50-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM13-50 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 700mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 30A | Schottky | 50V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 50V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||
| VS-3EJH01HM3/6A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs3ejh01hm36b-datasheets-8779.pdf | DO-221AC, SMA Flat Leads | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 18 ns | Standard | 100V | 3A | 85A | 1 | 3A | 100V | 2μA @ 100V | 930mV @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| UG56G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 14 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 400V | 10μA @ 400V | 1.55V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT52K-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | 1.4A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.3V | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 200 ns | 200 ns | Avalanche | 800V | 1.4A | 0.85A | 5μA @ 800V | 1.3V @ 1A | -55°C~175°C | ||||||||||||||||||||||||
| SDT5A100P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 16 Weeks | not_compliant | e3 | Matte Tin (Sn) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 50μA @ 100V | 660mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT52J-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 1.4A | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 200 ns | 200 ns | Avalanche | 600V | 1.4A | 0.85A | 5μA @ 600V | 1.3V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| BYV15-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv16tap-datasheets-0526.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.5V | 40A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 40A | 800V | 300 ns | 300 ns | Avalanche | 800V | 1.5A | 1 | 5μA @ 800V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| CD214C-FS3G |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS3P5LHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss3p6lm386a-datasheets-6013.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | TO-277A | Schottky | 50V | 3A | 150A | 1 | 3A | 50V | 150μA @ 50V | 600mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SMAJ5819E3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT53D-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 50 ns | 50 ns | Avalanche | 200V | 1.9A | 1 | 5μA @ 200V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||
| BYT54K-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 1.25A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 100 ns | 100 ns | Avalanche | 800V | 1.25A | 0.75A | 5μA @ 800V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| UG4A-E3/54 | Vishay Semiconductor Diodes Division | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 4A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 30 ns | 30 ns | Standard | 50V | 4A | 1 | 4A | 20pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||
| SF4001-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf4007tr-datasheets-5869.pdf | 1A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Avalanche | 50V | 1A | 1A | 5μA @ 30V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||
| UG4C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 4A | 950mV | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 150A | 150V | 30 ns | 30 ns | Standard | 150V | 4A | 1 | 4A | 20pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||
| ES01FV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-es01fv1-datasheets-3584.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 1.5kV | 500mA | 0.5A | 1500V | 10μA @ 1500V | 2V @ 500mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| SDT5A100P5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 3 | 16 Weeks | FREE WHEELING DIODE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 50μA | Schottky | 100A | 1 | 5A | 100V | 50μA @ 100V | 660mV @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| ES2FHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2fe35bt-datasheets-3226.pdf | DO-214AA, SMB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 35 ns | Standard | 300V | 2A | 50A | 1 | 2A | 15pF @ 4V 1MHz | 300V | 10μA @ 50V | 1.1V @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||
| NRVUS230VT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-murs240t3g-datasheets-2946.pdf | DO-214AA, SMB | 2 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | DUAL | J BEND | 175°C | 1 | R-PDSO-J2 | SINGLE | HIGH VOLTAGE ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300V | 5μA | 65ns | Standard | 35A | 1 | 2A | 300V | 5μA @ 300V | 1.3V @ 2A | 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| BYX86TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||
| BYT51M-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | No | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 1.5A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| SS32 V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 500μA @ 20V | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF37G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 5μA | 35ns | Standard | 125A | 1 | 3A | 60pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| 6A40G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| ES2FHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2fe35bt-datasheets-3226.pdf | DO-214AA, SMB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 35 ns | Standard | 300V | 2A | 50A | 1 | 2A | 15pF @ 4V 1MHz | 300V | 10μA @ 50V | 1.1V @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||
| 6A80G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 800V | 10μA @ 800V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-4ESH02-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs4esh02m387a-datasheets-5249.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | TO-277A | 25 ns | Standard | 200V | 4A | 130A | 1 | 4A | 200V | 2μA @ 200V | 930mV @ 4A | -65°C~175°C |
