Products
Manufacturer
RFQ
NEWS
ContactMicrosemi(18086)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Data Rate | Forward Current | Forward Voltage | Output Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Function | Application | Number of Outputs | Speed | Power - Max | Frequency Range | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Inputs | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5620US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 60S4 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-60s4-datasheets-3996.pdf | 6.22 | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4454UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/144 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-jan1n4454ur1-datasheets-5473.pdf | DO-213AA | 2 | 13 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 50V | 4A | 44 ns | Standard | 100nA @ 50V | 1V @ 10mA | 200mA DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N1190R | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n1190-datasheets-2479.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5712-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/444 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | Contains Lead | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | WIRE | 2 | Single | 1 | Qualified | 75mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 16V | 20V | Schottky | 0.075A | 2pF @ 0V 1MHz | 150nA @ 16V | 1V @ 35mA | 750mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPR15E3 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | Yes with exemptions | /files/microsemi-upr10e3tr13-datasheets-6039.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5188 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Single | 1 | Qualified | 3A | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 400V | 80A | 250 ns | Standard | 1 | 3A | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6620US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n6621us-datasheets-1257.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5615US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 1A | 45pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N6622 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n6622-datasheets-4586.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5553 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 2 μs | Standard | 800V | 5A | 1 | 5A | 1μA @ 800V | 1.3V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60DQ60SG | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tube | RoHS Compliant | /files/microsemi-apt60dq60sg-datasheets-4236.pdf | 3 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3293R | Microsemi |
Min: 1 Mult: 1 |
download | Bulk | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3297-datasheets-0944.pdf | 1 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | 8541.10.00.80 | e0 | TIN LEAD | NO | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 1 | 200°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-H1 | SINGLE | ANODE | POWER | SILICON | 600V | DO-205AA | 1.2V | RECTIFIER DIODE | 1600A | 1 | 100A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5819-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjan1n58191-datasheets-3027.pdf | 2.72(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6625 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | 1.95V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 15A | 60 ns | Standard | 1.1kV | 1A | 1A | 10pF @ 10V 1MHz | 1100V | 500nA @ 1100V | 1.75V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N6620US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n6621us-datasheets-1257.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5419 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 150 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SMX0504-M1 | Microsemi |
Min: 1 Mult: 1 |
download | Attenuator|Switch | Tape and Reel | RoHS Compliant | /files/microchiptechnology-sm0504m1-datasheets-2411.pdf | 2 | Single | HF|VHF|UHF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSC7145XRU-31/C | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SSTL (Stub-Series Terminated Logic) | Non-RoHS Compliant | 2003 | /files/microsemicorporation-vsc7145xru30c-datasheets-2426.pdf | 64-QFP | 3.3V | 64-PQFP (14x14) | 2.52Gbps | Differential | Serializer/Deserializer | 10 | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5619JANTXV | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL60DSK120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 16 | EAR99 | 280W | Dual | 1 | Insulated Gate BIP Transistors | 2.77nF | Dual Buck Chopper | 280W | 1.2kV | 1.2kV | 80A | Standard | 1200V | 2.25 V | 20V | 250μA | 2.25V @ 15V, 50A | Trench Field Stop | Yes | 2.77nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA201A | Microsemi |
Min: 1 Mult: 1 |
download | RoHS non-compliant | /files/microsemi-ga201-datasheets-4172.pdf | 5.84(Max) | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60HM70RT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptcv60hm70rt3g-datasheets-2300.pdf | SP3 | 3 | EAR99 | 250W | 1 | Insulated Gate BIP Transistors | 3.15nF | Full Bridge Inverter | 250W | 600V | 1.9V | 50A | Single Phase Bridge Rectifier | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANS1N5819UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5819ur1-datasheets-5682.pdf | 2.66(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50VDA120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw, Through Hole | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50vda120t3g-datasheets-2458.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | Lead Free | 20 | 3 | EAR99 | 312W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X20 | 3.45nF | Dual Boost Chopper | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 3.2V | 100 ns | 1.2kV | 70A | Standard | 1200V | 400 ns | 20V | 250μA | 3.7V @ 15V, 50A | NPT | Yes | 3.45nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N6625US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n6621us-datasheets-1257.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150TDU60PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150tdu60pg-datasheets-3892.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | 21 | 6 | R-XUFM-X21 | 9.2nF | SILICON | Triple, Dual - Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 1.9V | 225A | Standard | 370 ns | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | No | 9.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT30140 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-cpt30140-datasheets-5231.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ300A120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2016 | /files/microsemicorporation-aptglq300a120g-datasheets-4004.pdf | Module | 36 Weeks | SP6 | Half Bridge | 1500W | Standard | 1200V | 500A | 200μA | 2.42V @ 15V, 300A | Trench Field Stop | No | 17.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5616 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single |
