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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Application | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Capacitance @ Vr, F | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N6677UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/610 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA (Glass) | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/610E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 700mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 40V | Schottky | 5μA @ 40V | 500mV @ 200mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5188 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5187-datasheets-3585.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5809US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4148UR-1/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpabcjan1n4148ur1-datasheets-4537.pdf | 1.7(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jantxv1n5806-datasheets-1101.pdf | A, Axial | Contains Lead | 2 | 14 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5418US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5418us-datasheets-4295.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES2604R | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | Not Applicable | 150°C | -55°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-ues2604-datasheets-0585.pdf | Lead Free | 2 | 8 Weeks | 3 | no | No | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | Common Cathode | 2 | Rectifier Diodes | O-MBFM-P2 | 30A | ULTRA FAST RECOVERY | SILICON | 50μA | 200V | 300A | 1.25V | 50 ns | RECTIFIER DIODE | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5554 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5550-datasheets-2378.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6074 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | 2.04V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 35A | 30 ns | Standard | 100V | 850mA | 1 | 3A | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5616 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3903 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3901-datasheets-5893.pdf | DO-203AB, DO-5, Stud | 1 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 20A | 1.4V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 400V | 225A | 200 ns | Standard | 1 | 150pF @ 10V 1MHz | 50μA @ 400V | 1.4V @ 63A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5619 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5821US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5822us-datasheets-5973.pdf | SQ-MELF, B | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 3A | 700mV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 30V | Schottky | 30V | 3A | 1 | 3A | 100μA @ 30V | 500mV @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5616US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6392 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/554 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n6392-datasheets-9855.pdf | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/554 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 60A | 820mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 45V | 1kA | Schottky | 1 | 3000pF @ 5V 1MHz | 2mA @ 45V | 680mV @ 60A | 54A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6621 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n6622-datasheets-4586.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF150A120T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | /files/microsemicorporation-aptgf150a120t3ag-datasheets-2178.pdf | SP3 | Lead Free | 10 | 20 | EAR99 | No | 1.041kW | UPPER | UNSPECIFIED | 25 | Dual | 2 | Insulated Gate BIP Transistors | R-XUFM-X10 | 9.3nF | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1041W | 1.2kV | 190 ns | 1.2kV | 210A | Standard | 1200V | 390 ns | 3.7 V | 250μA | 3.7V @ 15V, 150A | NPT | Yes | 9.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6642US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n6643ustr-datasheets-8160.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF25H120T2G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf25h120t2g-datasheets-2265.pdf | SP2 | 22 | EAR99 | 208W | 1 | Insulated Gate BIP Transistors | 1.65nF | Full Bridge Inverter | 1.2kV | 1.2kV | 40A | Standard | 1200V | 3.7 V | 20V | 250μA | 3.7V @ 15V, 25A | NPT | Yes | 1.65nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N3595-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n35951-datasheets-5478.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60TLM45T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60tlm45t3g-datasheets-2316.pdf | SP3 | 32 | 24 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 250W | UPPER | UNSPECIFIED | 32 | Dual | 4 | Insulated Gate BIP Transistors | R-XUFM-X32 | 4.62nF | SILICON | Three Level Inverter - IGBT, FET | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6631U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60TLM24T3G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Chassis Mount | -40°C~175°C TJ | Bulk | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60tlm24t3g-datasheets-2860.pdf | Module | 24 | 24 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | UPPER | UNSPECIFIED | 25 | Dual | 2 | Insulated Gate BIP Transistors | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 250W | 170 ns | 600V | 75A | Standard | 100A | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR6090R | Microsemi |
Min: 1 Mult: 1 |
Schottky Diode | RoHS non-compliant | /files/microsemi-sbr6090r-datasheets-7960.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ200H65G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2016 | /files/microsemicorporation-aptglq200h65g-datasheets-3939.pdf | Module | 36 Weeks | SP6 | Full Bridge | 680W | Standard | 650V | 270A | 75μA | 2.3V @ 15V, 200A | Trench Field Stop | No | 12.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5712-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n57121-datasheets-2433.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400DA120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt400da120g-datasheets-4031.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.785kW | UPPER | UNSPECIFIED | 5 | 1 | 28nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1785W | 1.2kV | 340 ns | 1.2kV | 560A | Standard | 1200V | 620 ns | 750μA | 2.1V @ 15V, 400A | Trench Field Stop | No | 28nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5616US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT600U120D4G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2011 | /files/microsemicorporation-aptgt600u120d4g-datasheets-4139.pdf | D4 | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | e1 | TIN SILVER COPPER | 2.5kW | UPPER | UNSPECIFIED | 4 | 1 | 40nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 2500W | 1.2kV | 400 ns | 1.2kV | 900A | Standard | 1200V | 830 ns | 5mA | 2.1V @ 15V, 600A | Trench Field Stop | No | 40nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5811US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-1n5811aus-datasheets-6164.pdf | 2 | Single |
