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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Power Supply Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N457A | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 225mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 70V | DO-7 | Standard | 70V | 150mA | 0.075A | 1μA @ 70V | 1V @ 100mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6642U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n6643u-datasheets-6375.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5819-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/586 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/586 | WIRE | 2 | Single | 1 | Qualified | 1A | 850mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 1nA | 40V | 50A | Schottky | 1A | 45V | 50μA @ 45V | 490mV @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5551 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5550-datasheets-2378.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5619 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | DO-7 | 250 ns | Standard | 600V | 1A | 1A | 25pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S43100TS | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5622 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDM30014 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-tdm30014-datasheets-9563.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5552US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N6642US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n6643ustr-datasheets-8160.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5292UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 | FIELD EFFECT | Non-RoHS Compliant | 1999 | /files/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 0.62mA | 1.13V | 1550000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LX5506LQ-TR | Microsemi |
Min: 1 Mult: 1 |
download | Tape and Reel | /files/microsemi-lx5506lqtr-datasheets-7127.pdf | 16 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30SCD120S | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt30scd120s-datasheets-7866.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 22 Weeks | 3 | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | No Recovery Time > 500mA (Io) | 0 s | Silicon Carbide Schottky | 1.2kV | 99A | 2100pF @ 0V 1MHz | 1200V | 600μA @ 1200V | 1.8V @ 30A | 99A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM845JE3/TR | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tape and Reel | Yes with exemptions | /files/microsemi-lsm840je3tr13-datasheets-4617.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5807 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 50V | 125A | 30 ns | Standard | 50V | 6A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 50V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANS1N6638 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-data1n6642jans-datasheets-6025.pdf | 1.91(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC020SDA120B | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-247-2 | 20 Weeks | TO-247 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 104pF @ 400V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 43A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R50420 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-r504120-datasheets-5608.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL90SK120T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP1 | 22 Weeks | 10 | EAR99 | 385W | 1 | Insulated Gate BIP Transistors | 4.4nF | Single | 385W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 2.25 V | 20V | 250μA | 2.25V @ 15V, 75A | Trench Field Stop | Yes | 4.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5620US/TR | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GR120JD30 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gr120jd30-datasheets-2285.pdf | SOT-227-4 | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | 417W | 1 | Insulated Gate BIP Transistors | 5.55nF | Single | 417W | 1.2kV | 3.2V | 84A | Standard | 1200V | 30V | 1.1mA | 3.2V @ 15V, 50A | NPT | No | 5.55nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N4148UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjan1n4148ur1-datasheets-4537.pdf | 1.7(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H60T2G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | SP2 | 22 | EAR99 | No | 176W | 3.15nF | Full Bridge Inverter | 600V | 600V | 80A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5418US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5418us-datasheets-4295.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75TA120PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt75ta120pg-datasheets-3874.pdf | SP6 | 21 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 350W | UPPER | UNSPECIFIED | 21 | 6 | R-XUFM-X21 | 5.34nF | SILICON | Three Phase | ISOLATED | POWER CONTROL | N-CHANNEL | 350W | 1.2kV | 335 ns | 2.1V | 100A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | No | 5.34nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS5100E3 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | Yes with exemptions | /files/microsemi-ups5100e3-datasheets-8368.pdf | 3 | Single Dual Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300TL60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt300tl60g-datasheets-3994.pdf | SP6 | Lead Free | 12 | 36 Weeks | 11 | EAR99 | 935W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | R-XUFM-X12 | 18.4nF | 115 ns | 225 ns | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 935W | 600V | 180 ns | 600V | 400A | Standard | 370 ns | 1.9 V | 20V | 350μA | 1.9V @ 15V, 300A | Trench Field Stop | No | 18.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6912UTK2CS | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tray | RoHS non-compliant | /files/microsemi-jan1n6912utk2as-datasheets-8567.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT600DU60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt600du60g-datasheets-4079.pdf | SP6 | 7 | 36 Weeks | 7 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 2.3kW | UPPER | UNSPECIFIED | 7 | Dual | 2 | 49nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 2300W | 600V | 205 ns | 600V | 700A | Standard | 400 ns | 750μA | 1.8V @ 15V, 600A | Trench Field Stop | No | 49nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5554US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single |
