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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Speed Grade | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | Number of Inputs | Organization | Number of Gates | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Core Processor | Connectivity | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Number of Equivalent Gates | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| A2F500M3G-1PQG208 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 4.1mm | RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 28mm | 28mm | 1.5V | 208 | 12 Weeks | 1.575V | 1.425V | 208 | Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | Pure Matte Tin (Sn) | YES | QUAD | GULL WING | 245 | 1.5V | 0.5mm | A2F500M3G | 30 | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 11520 CLBS, 500000 GATES | ARM® Cortex®-M3 | Ethernet, I2C, SPI, UART/USART | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | 500000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM18SCG | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60am18scg-datasheets-5348.pdf | SP6 | Lead Free | 7 | 16 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 833W | UPPER | UNSPECIFIED | 7 | 833W | 2 | R-XUFM-X7 | 21 ns | 30ns | 84 ns | 283 ns | 143A | 30V | SILICON | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 0.018Ohm | 1800 mJ | 2 N-Channel (Half Bridge) | 28000pF @ 25V | 18m Ω @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 80MHz | 2mA | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 484-BGA | 12 Weeks | 484 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 100MHz | A2F500M3G | 484-FPBGA (23x23) | MCU - 41, FPGA - 128 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DUM02G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dum02g-datasheets-9467.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 160 ns | 240ns | 160 ns | 500 ns | 495A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1900A | 3000 mJ | 2 N-Channel (Dual) | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM34CT3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam34ct3ag-datasheets-9524.pdf | Module | 36 Weeks | SP3 | 1200V 1.2kV | 375W | 6 N-Channel (3-Phase Bridge) | 2788pF @ 1000V | 34mOhm @ 50A, 20V | 4V @ 15mA | 74A Tc | 161nC @ 5V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60TAM24TPG | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60tam24tpg-datasheets-9620.pdf | SP6 | 36 Weeks | 23 | EAR99 | No | 462W | 3 | FET General Purpose Power | 95A | 600V | METAL-OXIDE SEMICONDUCTOR | 462W | 6 N-Channel (3-Phase Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060T-1FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A40FT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 12 | 390W | 2 | FET General Purpose Power | 44 ns | 40ns | 38 ns | 150 ns | 21A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 0.48Ohm | 2 N-Channel (Half Bridge) | 7868pF @ 25V | 480m Ω @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM19STG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2004 | /files/microsemicorporation-aptm50am19stg-datasheets-5100.pdf | SP4 | 4 | 1.25kW | SP4 | 22.4nF | 170A | 500V | 1250W | 2 N-Channel (Half Bridge) | 22400pF @ 25V | 19mOhm @ 85A, 10V | 5V @ 10mA | 170A | 492nC @ 10V | Silicon Carbide (SiC) | 19 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VFG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM10G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm20dhm10g-datasheets-5168.pdf | SP6 | 8 | 6 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | NOT SPECIFIED | 8 | NOT SPECIFIED | 694W | 2 | Not Qualified | R-XUFM-X8 | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 2 N-Channel (Dual) Asymmetrical | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-1FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM60H23FT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60h23ft1g-datasheets-0386.pdf | SP1 | 12 | 36 Weeks | 1 | EAR99 | AVALANCHE RATED | No | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | 37 ns | 43ns | 34 ns | 115 ns | 20A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.23Ohm | 4 N-Channel (H-Bridge) | 5316pF @ 25V | 276m Ω @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060TS-1FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM45BC1G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60am45bc1g-datasheets-0448.pdf | SP1 | 36 Weeks | 1 | EAR99 | No | 250W | 250W | 3 | Other Transistors | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-1TQ144 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 100MHz | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 144-LQFP | EBI/EMI, I2C, SPI, UART, USART | A2F060M3E | 144-TQFP (20x20) | MCU - 21, FPGA - 33 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 100MHz | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DDAM65T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50ddam65t3g-datasheets-0485.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 2 N-Channel (Dual) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-PQ208 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 80MHz | 4.1mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 28mm | 28mm | 208 | 12 Weeks | 208 | Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | 225 | 1.5V | 0.5mm | A2F500M3G | 1.575V | 1.425V | 20 | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 11520 CLBS, 500000 GATES | ARM® Cortex®-M3 | Ethernet, I2C, SPI, UART/USART | 24 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | 500000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM35SCTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60am35sctg-datasheets-0552.pdf | SP4 | 10 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 10 | 416W | 2 | R-XUFM-X10 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.035Ohm | 1800 mJ | 2 N-Channel (Half Bridge) | 14000pF @ 25V | 35m Ω @ 36A, 10V | 3.9V @ 2mA | 518nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010S-1VF400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2016 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S010S | 400-VFBGA (17x17) | 195 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90DDA12T1G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90dda12t1g-datasheets-5939.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 30A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 75A | 2 N Channel (Dual Buck Chopper) | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-FG256M | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -55°C~125°C TJ | Tray | 3 (168 Hours) | 125°C | -55°C | 80MHz | Non-RoHS Compliant | /files/microsemicorporation-a2f060m3efg256m-datasheets-5981.pdf | 256-LBGA | 256 | EBI/EMI, I2C, SPI, UART, USART | A2F060M3E | 256-FPBGA (17x17) | MCU - 26, FPGA - 66 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 80MHz | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML1002U60R020T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP3 | 14 | 22 Weeks | 3 | EAR99 | No | 520W | UNSPECIFIED | 32 | 520W | 2 | FET General Purpose Power | R-XDFM-X14 | 20A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 74A | 2 N-Channel (Dual) | 6000pF @ 25V | 720m Ω @ 10A, 10V | 4V @ 2.5mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005-TQ144I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.6mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 144 | 8 Weeks | OBSOLETE (Last Updated: 1 month ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PQFP-G144 | 84 | DDR | 64KB | MCU, FPGA | 84 | 166MHz | 84 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 6060 | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10021JLL | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt10021jll-datasheets-2794.pdf | 1kV | 37A | SOT-227-4, miniBLOC | Lead Free | 4 | 19 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 694W | 1 | FET General Purpose Power | 29 ns | 22ns | 20 ns | 80 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 694W Tc | 3600 mJ | N-Channel | 9750pF @ 25V | 210m Ω @ 18.5A, 10V | 5V @ 5mA | 37A Tc | 395nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-1TQ144 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 1.2V | 144 | 144 | OBSOLETE (Last Updated: 1 month ago) | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | NOT SPECIFIED | Field Programmable Gate Arrays | Not Qualified | 84 | DDR, PCIe, SERDES | 64KB | 1 | MCU, FPGA | 84 | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JVFR | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m11jvfr-datasheets-4576.pdf | 200V | 175A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 28 Weeks | 30.000004g | 4 | yes | EAR99 | FREDFET | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 700W | 1 | FET General Purpose Power | 20 ns | 40ns | 10 ns | 75 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 700A | 3600 mJ | N-Channel | 21600pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 5mA | 175A Tc | 180nC @ 10V | 10V | ±30V |
