Products
Manufacturer
RFQ
NEWS
ContactIXYS(5222)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMIX1F132N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f132n50p3-datasheets-2252.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 30 Weeks | 24 | Single | FET General Purpose Power | 42 ns | 90 ns | 63A | 40V | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP15N50L2 | IXYS | $31.67 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp15n50l2-datasheets-1635.pdf | TO-220-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 300W Tc | TO-220AB | 0.48Ohm | 750 mJ | N-Channel | 4080pF @ 25V | 2.5 V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTU12N06T | IXYS | $5.53 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtu12n06t-datasheets-8277.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | 30A | 0.085Ohm | 20 mJ | N-Channel | 256pF @ 25V | 85m Ω @ 6A, 10V | 4V @ 25μA | 12A Tc | 3.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTY2N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixty2n65x2-datasheets-9221.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 2A | 650V | 55W Tc | N-Channel | 180pF @ 25V | 2.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 4.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP20N50P3M | IXYS | $4.57 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp20n50p3m-datasheets-2906.pdf | TO-220-3 | 3 | 26 Weeks | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 58W Tc | TO-220AB | 8A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFH94N30P3 | IXYS | $10.58 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 5V | 1040W Tc | TO-247AD | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTT60N20L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n20l2-datasheets-3662.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 540W Tc | 150A | 0.045Ohm | 2000 mJ | N-Channel | 10500pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFN94N50P2 | IXYS | $26.17 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Chassis, Stud | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfn94n50p2-datasheets-3736.pdf | SOT-227-4, miniBLOC | 30 Weeks | compliant | 68A | 500V | 780W Tc | N-Channel | 13700pF @ 25V | 55m Ω @ 500mA, 10V | 5V @ 8mA | 68A Tc | 220nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH22N60P | IXYS | $7.19 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh22n60p-datasheets-3796.pdf | 600V | 22A | TO-247-3 | 25.96mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 150°C | 20 ns | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 400W Tc | TO-247AD | 66A | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 4mA | 22A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFX24N100Q3 | IXYS | $27.32 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk24n100q3-datasheets-1553.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1000W Tc | 60A | 0.44Ohm | 2000 mJ | 1kV | N-Channel | 7200pF @ 25V | 440m Ω @ 12A, 10V | 6.5V @ 4mA | 24A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFV16N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n80p-datasheets-7014.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 32ns | 29 ns | 75 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4600pF @ 25V | 600m Ω @ 500mA, 10V | 5V @ 4mA | 16A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH64N10L2 | IXYS | $8.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta64n10l2-datasheets-1737.pdf | TO-247-3 | 28 Weeks | 64A | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 32A, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ69N30PM | IXYS | $4.32 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2012 | TO-3P-3 Full Pack | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300V | 300V | 90W Tc | 25A | 200A | 0.049Ohm | 1500 mJ | N-Channel | 4960pF @ 25V | 49m Ω @ 34.5A, 10V | 5V @ 250μA | 25A Tc | 156nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTH41N25 | IXYS | $8.29 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth41n25-datasheets-3980.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 41A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 164A | 0.072Ohm | 1000 mJ | 250V | N-Channel | 3200pF @ 25V | 72m Ω @ 15A, 10V | 4V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTH360N055T2 | IXYS | $50.48 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt360n055t2-datasheets-3643.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 935W Tc | 900A | 0.0024Ohm | 960 mJ | N-Channel | 20000pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 250μA | 360A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH7N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n80-datasheets-4081.pdf | 800V | 7A | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 60 ns | 100 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 7A | 28A | 800V | N-Channel | 2800pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4.5V @ 2.5mA | 7A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT52N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFK36N60P | IXYS | $2.66 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 650W Tc | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTT30N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFK220N17T2 | IXYS | $12.01 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx220n17t2-datasheets-4243.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1250W Tc | 550A | 0.0063Ohm | 2000 mJ | N-Channel | 31000pF @ 25V | 6.3m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH64N65X | IXYS | $13.15 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth64n65x-datasheets-4289.pdf | TO-247-3 | 15 Weeks | 64A | 650V | 890W Tc | N-Channel | 5500pF @ 25V | 51m Ω @ 32A, 10V | 5V @ 250μA | 64A Tc | 143nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX170N20T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20t-datasheets-4838.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1150W Tc | 470A | 0.011Ohm | N-Channel | 19600pF @ 25V | 11m Ω @ 60A, 10V | 5V @ 4mA | 170A Tc | 265nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFT80N65X2HV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft80n65x2hv-datasheets-4361.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | compliant | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT94N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 1040W Tc | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT30N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixft30n50-datasheets-4425.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFN36N110P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n110p-datasheets-4465.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 54ns | 45 ns | 94 ns | 36A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 1000W Tc | 110A | 2000 mJ | 1.1kV | N-Channel | 23000pF @ 25V | 240m Ω @ 500mA, 10V | 6.5V @ 1mA | 36A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFR180N15P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n15p-datasheets-4534.pdf | ISOPLUS247™ | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 2.5kV | 32ns | 36 ns | 150 ns | 100A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 4mA | 100A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH10N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | 1kV | 10A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 62 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA10N60P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta10n60p-datasheets-9382.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 250μA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTA130N10T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t7-datasheets-9476.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 47ns | 28 ns | 44 ns | 130A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 0.0091Ohm | 400 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±20V |
