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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTQ220N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth220n055t-datasheets-7530.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | 62ns | 53 ns | 53 ns | 220A | SILICON | DRAIN | SWITCHING | 430W Tc | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV250N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv250n075ts-datasheets-7668.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 50ns | 45 ns | 58 ns | 250A | SILICON | DRAIN | SWITCHING | 550W Tc | 560A | 0.004Ohm | 1500 mJ | 75V | N-Channel | 9900pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 250A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT13N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n100-datasheets-9841.pdf | 1kV | 13A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 900mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 12.5A | 20V | DRAIN | SWITCHING | 1000V | 300W Tc | 50A | 1kV | N-Channel | 4000pF @ 25V | 900m Ω @ 500mA, 10V | 4.5V @ 4mA | 12.5A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT52N30Q | IXYS | $14.32 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | 300V | 52A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 60MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 360W | 1 | FET General Purpose Power | R-PSSO-G2 | 60ns | 25 ns | 80 ns | 52A | 20V | SILICON | DRAIN | 360W Tc | 208A | 300V | N-Channel | 5300pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE39N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe39n90-datasheets-8470.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 68ns | 30 ns | 125 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 580W Tc | 0.22Ohm | 900V | N-Channel | 13400pF @ 25V | 220m Ω @ 19.5A, 10V | 5V @ 8mA | 34A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH70N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n15-datasheets-4193.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 52ns | 23 ns | 70 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 280A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 70A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N10S1 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n25-datasheets-8664.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600W Tc | 0.027Ohm | 3000 mJ | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH150N17T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth150n17t-datasheets-8696.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 400A | 0.012Ohm | 1500 mJ | 175V | N-Channel | 9800pF @ 25V | 12m Ω @ 75A, 10V | 5V @ 1mA | 150A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN34N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn34n100-datasheets-8717.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | Not Qualified | 65ns | 30 ns | 110 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 700W Tc | 136A | 0.28Ohm | 1kV | N-Channel | 9200pF @ 25V | 280m Ω @ 500mA, 10V | 5.5V @ 8mA | 34A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK260N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx260n17t-datasheets-9075.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1670W Tc | 700A | 0.0065Ohm | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP10N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp10n60c5m-datasheets-1008.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 31W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5.4A | 20V | SILICON | SWITCHING | TO-220AB | 0.385Ohm | 225 mJ | 600V | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 5.4A Tc | 22nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC12N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc12n80p-datasheets-4312.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 7A | 1000 mJ | 800V | N-Channel | 2800pF @ 25V | 930m Ω @ 6A, 10V | 5.5V @ 2.5mA | 7A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK150N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx150n15-datasheets-8690.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN38N100Q2 | IXYS | $36.21 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn38n100q2-datasheets-4474.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 28ns | 15 ns | 57 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 890W Tc | 152A | 0.25Ohm | 5000 mJ | 1kV | N-Channel | 7200pF @ 25V | 250m Ω @ 19A, 10V | 5V @ 8mA | 38A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFY4N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | TO-252AA | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD14N100-8X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1000V | 1000V | 0.75Ohm | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR21N50Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX60N25Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM11N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4200pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM67N10 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | TO-204AE | 2 | 3 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 67A | 268A | 0.025Ohm | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LF-SIC-EVB-GDEV1 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | 15 Weeks | Gate Driver | Silicon Carbide (SiC) Diodes, MOSFETs | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN414 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDN414 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA210P1600YD | IXYS |
Min: 1 Mult: 1 |
download | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | 150°C | -40°C | 2 | R-PUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 735W | 1600V | 1000μA | 1.34V | RECTIFIER DIODE | 6060A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX98N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | EAR99 | AVALANCHE RATED | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF1N450 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n450-datasheets-9289.pdf | i4-Pac™-5 (3 Leads) | 3 | 8 Weeks | 3 | EAR99 | unknown | Single | 165W | 1 | FET General Purpose Power | 60ns | 127 ns | 58 ns | 900mA | 20V | SILICON | ISOLATED | 4500V | 160W Tc | 0.9A | 3A | 80Ohm | 4.5kV | N-Channel | 1730pF @ 25V | 85 Ω @ 50mA, 10V | 6.5V @ 250μA | 900mA Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N80P | IXYS | $5.61 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 400MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 650W | 1 | FET General Purpose Power | 32 ns | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 55A | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFN106N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 106A | SOT-227-4, miniBLOC | Lead Free | 8 Weeks | 20MOhm | 4 | No | 520W | 1 | SOT-227B | 9nF | 80ns | 30 ns | 75 ns | 106A | 20V | 200V | 521W Tc | 20mOhm | 200V | N-Channel | 9000pF @ 25V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 106A Tc | 380nC @ 10V | 20 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N60P | IXYS | $3.41 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfp10n60p-datasheets-2120.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 25A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 1mA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| VMO1200-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-vmo120001f-datasheets-7431.pdf | Y3-Li | Lead Free | 4 | yes | EAR99 | not_compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 1.245kA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 1220A | 0.00125Ohm | N-Channel | 1.35m Ω @ 932A, 10V | 4V @ 64mA | 1220A Tc | 2520nC @ 10V | 10V | ±20V |
