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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Isolation Voltage | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Off State | Utilized IC / Part | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Current - Hold (Ih) (Max) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Thermal Resistance @ Natural | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | Current - Off State (Max) | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTC72N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 72A | 300V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA72N20T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 72A | 200V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK210N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk210n17t-datasheets-9134.pdf | TO-264-3, TO-264AA | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1150W Tc | 580A | 0.0075Ohm | 2000 mJ | N-Channel | 18800pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 4mA | 210A Tc | 285nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC110N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/ixys-ixtc110n25t-datasheets-1069.pdf | ISOPLUS220™ | Lead Free | 3 | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 27 ns | 60 ns | 50A | 20V | SILICON | ISOLATED | SWITCHING | 180W Tc | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 27m Ω @ 55A, 10V | 4.5V @ 1mA | 50A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC20N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXCY01N90E | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSIP-T3 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N250 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth02n250-datasheets-2386.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 1 | R-PSSO-G2 | 19ns | 33 ns | 32 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 2500V | 2500V | 83W Tc | 0.2A | 0.6A | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ15N100Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR32N50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 30A | 120A | 0.15Ohm | 1500 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT1874 TR | IXYS |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM15N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n60-datasheets-7594.pdf | TO-204AE | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 15A | 60A | 0.05Ohm | N-Channel | 4500pF @ 25V | 500m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM1627 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EV6R11S6 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ev6r11s6-datasheets-5884.pdf | Yes | Half H-Bridge Driver (External FET) | IX6R11S6 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI409 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDI409 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXRB5-506MINIPACK2 | IXYS |
Min: 1 Mult: 1 |
download | Bulk | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | 1.2kV | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 4.5Ohm | 3 | No | Single | 150W | 1 | TO-263 (IXTA) | 1.35nF | 15ns | 18 ns | 32 ns | 3A | 20V | 1200V | 200W Tc | 4.5Ohm | 1.1kV | N-Channel | 1350pF @ 25V | 4.5Ohm @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 4.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP28P065T | IXYS | $3.14 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta28p065t-datasheets-4647.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 83W Tc | TO-220AB | 90A | 0.045Ohm | 200 mJ | P-Channel | 2030pF @ 25V | 45m Ω @ 14A, 10V | 4.5V @ 250μA | 28A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH20N65X | IXYS | $9.98 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65x-datasheets-3922.pdf | TO-247-3 | 15 Weeks | 20A | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR80N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n50p-datasheets-2484.pdf | 500V | 80A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 72MOhm | 247 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | R-PSIP-T3 | 2.5kV | 27ns | 16 ns | 70 ns | 45A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 360W Tc | 200A | 3500 mJ | 500V | N-Channel | 12700pF @ 25V | 72m Ω @ 40A, 10V | 5V @ 8mA | 45A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP220N06T3 | IXYS | $4.58 |
Min: 1 Mult: 1 |
download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh220n06t3-datasheets-1345.pdf | TO-220-3 | 26 Weeks | yes | 220A | 60V | 440W Tc | N-Channel | 8500pF @ 25V | 4m Ω @ 100A, 10V | 4V @ 250μA | 220A Tc | 136nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK140N30P | IXYS | $43.32 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx140n30p-datasheets-6039.pdf | TO-264-3, TO-264AA | Lead Free | 3 | No SVHC | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | FET General Purpose Power | 30ns | 20 ns | 100 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 8mA | 140A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA120X150LB | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | SCHOTTKY | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsa120x150lb-datasheets-4796.pdf | SMD/SMT | 25mm | 5.5mm | 23mm | 9 | 9 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE, UL RECOGNIZED | IEC-60747 | DUAL | GULL WING | 185W | 2 | Other Diodes | 75A | SEPARATE, 2 ELEMENTS | ISOLATED | SOFT RECOVERY | SILICON | 5mA | 150V | 1.13V | RECTIFIER DIODE | 150V | 75A | 1 | 0.25 °C/W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI36-06AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -40°C | RoHS Compliant | TO-263-3 | 3 | Common Anode | 1.6V | 320A | 50 ns | 600V | 37A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP8-08S | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 180°C | -40°C | RoHS Compliant | TO-263-3 | Lead Free | 2 | 3 | yes | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Dual | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.15V | 100A | ANODE AND CATHODE | GENERAL PURPOSE | SILICON | 5μA | 800V | 110A | 800V | RECTIFIER DIODE | 800V | 11A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N3565HA160 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | 8 Weeks | 1.6kV | 7050A | 1A | 3V | 50000A @ 50Hz | 300mA | 3565A | Standard Recovery | 1.2V | 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCA500-16IO1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2005 | /files/ixys-mcc50014io1-datasheets-8583.pdf | WC-500 | 500 | MC*500 | 1.294kA | 1A | 1.6kV | 1294A | 1A | 3V | 16500A @ 50Hz | 300mA | 545A | Common Anode - All SCRs | 2 SCRs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXEH40N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixeh40n120-datasheets-4719.pdf | TO-3P-3 Full Pack | 3 | 6.500007g | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-247AD | 180 ns | 1.2kV | 2.4V | 135 ns | 3V | 60A | 1200V | 490 ns | 600V, 40A, 39 Ω, 15V | 20V | 6.5V | 3V @ 15V, 40A | NPT | 150nC | 6.1mJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH75N65C3 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixyh75n65c3-datasheets-0579.pdf | TO-247-3 | 28 Weeks | 38.000013g | 750W | NOT SPECIFIED | Single | NOT SPECIFIED | 750W | 650V | 1.8V | 2.3V | 170A | 400V, 60A, 3 Ω, 15V | 2.3V @ 15V, 60A | PT | 123nC | 360A | 27ns/93ns | 2.8mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK50-015A | IXYS |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2003 | /files/ixys-dssk50015a-datasheets-5969.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 20 Weeks | No SVHC | 3 | yes | EAR99 | No | 8541.10.00.80 | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 25A | 680mV | 450A | 1.5mA | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 150V | 450A | TO-247AD | Schottky | 150V | 25A | 1 | 1.5mA @ 150V | 810mV @ 25A | -55°C~175°C | 1 Pair Common Cathode |
