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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Reverse Recovery Time-Max | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VMO80-05P1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | ECO-PAC2 | 18 | yes | UL RECOGNIZED | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 18 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X18 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 82A | 0.05Ohm | 3000 mJ | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc280n055t-datasheets-7929.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 145A | SILICON | DRAIN | SWITCHING | 160W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.6m Ω @ 50A, 10V | 4V @ 250μA | 145A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n60-datasheets-5296.pdf | 600V | 38A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 130MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 55ns | 45 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 60A | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 4mA | 38A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC40N30Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | ISOPLUS220™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 36A | 160A | 0.08Ohm | 1000 mJ | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | No SVHC | 700mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 15A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 360W Tc | 60A | 1kV | N-Channel | 4500pF @ 25V | 4.5 V | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 15A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK35N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 42ns | 23 ns | 110 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 140A | 0.15Ohm | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 16.5A, 10V | 4V @ 4mA | 35A Tc | 227nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR150N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr150n15-datasheets-8652.pdf | ISOPLUS247™ | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX180N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-247-3 | 3 | Single | 560W | PLUS247™-3 | 9.1nF | 90ns | 55 ns | 140 ns | 180A | 20V | 85V | 560W Tc | 7mOhm | 85V | N-Channel | 9100pF @ 25V | 7mOhm @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ36N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixtj36n20-datasheets-8710.pdf | TO-3P-3 Full Pack | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSIP-T3 | 130ns | 98 ns | 110 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 144A | 0.07Ohm | 200V | N-Channel | 2970pF @ 25V | 70m Ω @ 18A, 10V | 4V @ 4mA | 36A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-247-3 | Lead Free | 3 | 9MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | AVALANCHE RATED | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 89W Tc | 4A | 10A | 2Ohm | 150 mJ | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC96N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc96n15p-datasheets-4288.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 33ns | 18 ns | 66 ns | 42A | 20V | 150V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 250A | 0.026Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 5 V | 26m Ω @ 48A, 10V | 5V @ 4mA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN230N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn230n10-datasheets-4384.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 8 Weeks | No SVHC | 6mOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 40 ns | 150ns | 60 ns | 112 ns | 230A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 250 ns | 920A | 100V | N-Channel | 19000pF @ 25V | 4 V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 230A Tc | 570nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N90PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | PLUS-220SMD | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSSO-G2 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD26N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 0.235Ohm | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH21N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth21n50q-datasheets-3269.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 300W Tc | TO-247AD | 21A | 84A | 0.25Ohm | 1.5 mJ | N-Channel | 4200pF @ 25V | 250m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N48Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY8N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n65x2-datasheets-1933.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | 650V | 150W Tc | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM40N30 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtm40n30-datasheets-4851.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 40A | 160A | 0.088Ohm | N-Channel | 4600pF @ 25V | 88m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD3N50P-2J | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 500V | 70W Tc | N-Channel | 409pF @ 25V | 2 Ω @ 1.5A, 10V | 5.5V @ 50μA | 3A Tc | 9.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI414 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDI414 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDS430SI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDS430SI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N60P | IXYS | $10.64 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 30 ns | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX210N30X3 | IXYS | $26.94 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx210n30x3-datasheets-8871.pdf | TO-247-3 | 19 Weeks | 300V | 1250W Tc | N-Channel | 24.2nF @ 25V | 5.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP36N20X3 | IXYS | $3.71 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-220-3 | 3 | 19 Weeks | AVALANCHE RATED | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-220AB | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24P20 | IXYS | $9.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt24p20-datasheets-4098.pdf | -200V | -24A | TO-247-3 | Lead Free | 3 | 28 Weeks | 150mOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 29ns | 28 ns | 68 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 96A | -200V | P-Channel | 4200pF @ 25V | 150m Ω @ 500mA, 10V | 5V @ 250μA | 24A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK64N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60q3-datasheets-3702.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 50 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 250A | 0.095Ohm | 600V | N-Channel | 9930pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120-TRL | IXYS | $5.19 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 17 Weeks | 3A | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30IM300PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | SILICON | 175W | 1μA | TO-263AB | 1.66V | RECTIFIER DIODE | 300V | 30A | 360A | 1 | 0.035μs |
