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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP3N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-220-3 | Lead Free | 3 | 8 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 70W Tc | TO-220AB | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTA5N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta5n60p-datasheets-6010.pdf | 600V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 17 ns | 55 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 5A | 10A | 360 mJ | 600V | N-Channel | 750pF @ 25V | 1.7 Ω @ 2.5A, 10V | 5.5V @ 50μA | 5A Tc | 14.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFT20N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n80q-datasheets-7388.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 360W | 1 | FET General Purpose Power | R-PSSO-G2 | 27ns | 14 ns | 74 ns | 20A | 20V | SILICON | DRAIN | 360W Tc | 80A | 0.42Ohm | 800V | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA160N075T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n075t7-datasheets-7444.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 64ns | 60 ns | 60 ns | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 360W Tc | 430A | 0.006Ohm | 750 mJ | 75V | N-Channel | 4950pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 250μA | 160A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFV96N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n20p-datasheets-3565.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTC220N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc220n075t-datasheets-7524.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 65ns | 47 ns | 55 ns | 115A | SILICON | ISOLATED | SWITCHING | 150W Tc | 600A | 0.005Ohm | 1000 mJ | 75V | N-Channel | 7700pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 115A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA180N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n085t-datasheets-7558.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 5.5MOhm | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 70ns | 65 ns | 55 ns | 180A | SILICON | DRAIN | SWITCHING | 430W Tc | 480A | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTP220N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n055t-datasheets-7591.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | 62ns | 53 ns | 53 ns | 220A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-220AB | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTA90N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta90n055t-datasheets-7633.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 20 ns | 40 ns | 90A | SILICON | DRAIN | SWITCHING | 176W Tc | 240A | 0.0088Ohm | 400 mJ | 55V | N-Channel | 2500pF @ 25V | 8.8m Ω @ 25A, 10V | 4V @ 50μA | 90A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| VMO40-05P1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | ECO-PAC2 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X4 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 500V | 41A | 0.1Ohm | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR32N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfr32n50q-datasheets-7716.pdf | ISOPLUS247™ | Lead Free | 3 | 160mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 120A | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 30A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTF250N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtf250n075t-datasheets-8242.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | Not Qualified | 50ns | 45 ns | 58 ns | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200W Tc | 130A | 0.004Ohm | 75V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR24N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n100-datasheets-5308.pdf | 1kV | 22A | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 35ns | 21 ns | 75 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 416W Tc | 96A | 1kV | N-Channel | 8700pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 22A Tc | 267nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFC80N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfc80n10-datasheets-8466.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 0.0125Ohm | 2500 mJ | 100V | N-Channel | 4800pF @ 25V | 12.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH14N100 | IXYS | $11.80 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n100-datasheets-8518.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFN25N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn25n90-datasheets-8618.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 35ns | 24 ns | 130 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 100A | 0.33Ohm | 3000 mJ | 900V | N-Channel | 10800pF @ 25V | 330m Ω @ 500mA, 10V | 5V @ 8mA | 25A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFX100N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk100n25-datasheets-8553.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 400A | 0.027Ohm | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 50A, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFN48N50U2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | 260 | 4 | Single | 35 | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 520W Tc | 192A | 0.1Ohm | 500V | N-Channel | 8400pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTQ80N28T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq80n28t-datasheets-8715.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 280V | 280V | 500W Tc | 240A | 0.049Ohm | N-Channel | 5000pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 1mA | 80A Tc | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFN260N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfn260n17t-datasheets-9078.pdf | SOT-227-4, miniBLOC | 3 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | NICKEL | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 245A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 170V | 170V | 1090W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 245A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFV12N120PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120p-datasheets-4453.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 543W Tc | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFH13N80Q | IXYS | $7.23 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH15N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFV18N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFP14N60P3 | IXYS | $2.71 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 10 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 21 ns | 43 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 327W Tc | TO-220AB | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFJ40N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfj40n30q-datasheets-3240.pdf | TO-220-3, Short Tab | 300V | 300W Tc | N-Channel | 4800pF @ 25V | 80m Ω @ 20A, 10V | 4V @ 4mA | 40A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N10Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT58N20Q TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft58n20qtrl-datasheets-3348.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 200V | 300W Tc | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM12N100 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 12A | 48A | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTM15N60 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2 | NO | BOTTOM | PIN/PEG | 150°C | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-204AE | 15A | 0.5Ohm | 300W |
