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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH14N80 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth14n80-datasheets-4559.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 56A | 0.7Ohm | 800V | N-Channel | 4500pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 250μA | 14A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH10N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh10n90-datasheets-7620.pdf | 900V | 10A | TO-247-3 | Contains Lead | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12ns | 18 ns | 51 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 40A | 900V | N-Channel | 4200pF @ 25V | 1.1 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA16N50P | IXYS | $27.56 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTU02N50D | IXYS | $1.54 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | Not Qualified | R-PSIP-T3 | 4ns | 4 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 5V @ 25μA | 200mA Tc | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXKP13N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5-datasheets-9701.pdf | TO-220-3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 13A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.3Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 300m Ω @ 6.6A, 10V | 3.5V @ 440μA | 13A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA160N04T2 | IXYS | $1.26 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n04t2-datasheets-9891.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | 400A | 0.005Ohm | 600 mJ | N-Channel | 4640pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 250μA | 160A Tc | 79nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA180N10T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n10t7-datasheets-0043.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 6.4MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-G6 | 54ns | 31 ns | 42 ns | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480W Tc | 450A | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFA50N20X3 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 200V | 240W Tc | N-Channel | 2100pF @ 25V | 30m Ω @ 25A, 10V | 4.5V @ 1mA | 50A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1200V | 200W Tc | N-Channel | 1100pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA32P20T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 300W Tc | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA20N65X-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ62N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 62A | 250V | N-Channel | 62A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ150N06P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq150n06p-datasheets-0489.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 53ns | 45 ns | 66 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 280A | 0.01Ohm | 2500 mJ | 60V | N-Channel | 3000pF @ 25V | 10m Ω @ 75A, 10V | 5V @ 250μA | 150A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA34N65X2 | IXYS | $3.97 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta34n65x2-datasheets-0539.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 102A | 250V | N-Channel | 102A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT15N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n80q-datasheets-2059.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 16 ns | 53 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 60A | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT12N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft12n90q-datasheets-0671.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 23ns | 15 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 48A | 0.9Ohm | 900V | N-Channel | 2900pF @ 25V | 900m Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFR14N100Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfr14n100q2-datasheets-0710.pdf | ISOPLUS247™ | Lead Free | 3 | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 200W | 1 | FET General Purpose Power | R-PSFM-T3 | 10ns | 12 ns | 28 ns | 9.5A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 200W Tc | 56A | 2500 mJ | 1kV | N-Channel | 2700pF @ 25V | 1.1 Ω @ 7A, 10V | 5V @ 4mA | 9.5A Tc | 83nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTK33N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk33n50-datasheets-0755.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 170mOhm | 3 | yes | EAR99 | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 30ns | 40 ns | 140 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 500V | N-Channel | 4900pF @ 25V | 170m Ω @ 500mA, 10V | 4V @ 250μA | 33A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK44N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n50q-datasheets-2086.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 22ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFT7N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n90q-datasheets-4153.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 13 ns | 42 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 7A | 28A | 700 mJ | 900V | N-Channel | 2200pF @ 25V | 1.5 Ω @ 500mA, 10V | 5V @ 2.5mA | 7A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFX44N55Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx44n55q-datasheets-0861.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 550V | N-Channel | 6400pF @ 25V | 120m Ω @ 22A, 10V | 4.5V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFE73N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe73n30q-datasheets-0915.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 36ns | 12 ns | 82 ns | 66A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400W Tc | 292A | 2500 mJ | 300V | N-Channel | 6400pF @ 25V | 46m Ω @ 36.5A, 10V | 4V @ 4mA | 66A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN44N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n50q-datasheets-0909.pdf | SOT-227-4, miniBLOC | 4 | 44g | No SVHC | 120mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 22ns | 10 ns | 75 ns | 44A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 500W Tc | 176A | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 4 V | 120m Ω @ 500mA, 10V | 4V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXFX400N15X3 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 1250W Tc | N-Channel | 23700pF @ 25V | 3m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK21N100 | IXYS | $1.24 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk21n100-datasheets-1027.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 50ns | 40 ns | 100 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.55Ohm | 1kV | N-Channel | 8400pF @ 25V | 550m Ω @ 500mA, 10V | 4.5V @ 500μA | 21A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTT12N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 1500V | 890W Tc | N-Channel | 3720pF @ 25V | 2.2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB40N110P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfb40n110p-datasheets-1092.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 55ns | 54 ns | 110 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 1250W Tc | 100A | 0.26Ohm | 2000 mJ | 1.1kV | N-Channel | 19000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXKN45N80C | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixkn45n80c-datasheets-1129.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 15ns | 10 ns | 75 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 380W Tc | 670 mJ | 800V | N-Channel | 74m Ω @ 44A, 10V | 3.9V @ 4mA | 44A Tc | 360nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFE44N50QD3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V |
