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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Number of I/O | Core Architecture | RAM Size | Forward Current | Forward Voltage | Isolation Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Non-Repetitive Pk On-state Cur | Repetitive Peak Reverse Voltage | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Desc. of Quick-Connects | Program Memory Type | Program Memory Size | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Structure | Number of SCRs, Diodes | Desc. of Screw Terminals | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Device Core | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | HTS | Maximum Power Dissipation (mW) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | No. of Timers | Maximum Expanded Memory Size | Watchdog | Analog Comparators |
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| IXFH75N10Q | IXYS | $8.24 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/ixys-ixfh75n10q-datasheets-8506.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 65ns | 28 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.02Ohm | 100V | N-Channel | 3700pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10mOhm | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90ns | 79 ns | 158 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N50U2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | 260 | 4 | 35 | 1 | FET General Purpose Power | Not Qualified | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 176A | 0.12Ohm | N-Channel | 8400pF @ 25V | 120m Ω @ 500mA, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT32N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n50-datasheets-4425.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 110 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK80N25 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk80n25-datasheets-8708.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 33MOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 25ns | 24 ns | 88 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 2500 mJ | 250V | N-Channel | 6000pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 80A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN48N55 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n55-datasheets-8869.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 550V | 550V | 600W Tc | 192A | 0.11Ohm | 3000 mJ | N-Channel | 8900pF @ 25V | 110m Ω @ 500mA, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N10S3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N55Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n55q-datasheets-4284.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 18ns | 13 ns | 50 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 104A | 1500 mJ | 550V | N-Channel | 3000pF @ 25V | 230m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC74N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc74n20p-datasheets-4331.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 21ns | 21 ns | 60 ns | 35A | 20V | 200V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 200A | 0.036Ohm | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 5 V | 36m Ω @ 37A, 10V | 5V @ 4mA | 35A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN39N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn39n90-datasheets-4380.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 68ns | 30 ns | 125 ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 0.2Ohm | 900V | N-Channel | 9200pF @ 25V | 220m Ω @ 500mA, 10V | 5V @ 8mA | 39A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV03N400S | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv03n400s-datasheets-5320.pdf | PLUS-220SMD | Lead Free | 2 | 220 | yes | AVALANCHE RATED | No | SINGLE | GULL WING | 3 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4000V | 130W Tc | 300A | 800A | 4kV | N-Channel | 435pF @ 25V | 290 Ω @ 500mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK55N50F | IXYS |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx55n50f-datasheets-6230.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | R-PSFM-T3 | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 220A | 0.0085Ohm | 3000 mJ | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ52N30Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR16N90Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP110N12T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta110n12t2-datasheets-3419.pdf | TO-220-3 | 24 Weeks | unknown | 120V | 517W Tc | N-Channel | 6570pF @ 25V | 14m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM9226 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM6N90A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth6n90-datasheets-4158.pdf | TO-204AA, TO-3 | 2 | yes | e3 | Matte Tin (Sn) | NO | BOTTOM | PIN/PEG | 260 | 2 | 35 | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 180W Tc | 6A | 24A | N-Channel | 2600pF @ 25V | 1.4 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI430MCI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDI430MCI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI402 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | Yes | FET Driver (External FET) | IXDI402 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N30X3 | IXYS | $8.13 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa72n30x3-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 25 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT16P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p60p-datasheets-8613.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 460W Tc | TO-247 | 48A | 0.72Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 720m Ω @ 500mA, 10V | 4.5V @ 250μA | 16A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP36N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta36n30p-datasheets-4075.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 24 Weeks | 110MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | 24 ns | 30ns | 28 ns | 97 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 90A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ60N50P3 | IXYS | $9.91 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT82N25P | IXYS | $8.68 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq82n25p-datasheets-3903.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 22 ns | 78 ns | 82A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.035Ohm | 1000 mJ | 250V | N-Channel | 4800pF @ 25V | 35m Ω @ 41A, 10V | 5V @ 250μA | 82A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP10P50P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 1Ohm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | TO-220AB | 30A | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI8-06AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsei806as-datasheets-8658.pdf | TO-263-3 | 10.41mm | 4.83mm | 9.4mm | Lead Free | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.5V | 100A | CATHODE | FAST SOFT RECOVERY | SILICON | 50W | 110A | 20μA | 600V | 110A | 600V | TO-263AB | 50 ns | 50 ns | RECTIFIER DIODE | 600V | 8A | 1 | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA20IM800PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dla20im800pc-datasheets-3154.pdf | TO-263-3 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 220A | CATHODE | GENERAL PURPOSE | SILICON | 83W | 10μA | 800V | TO-263AB | 1.24V | RECTIFIER DIODE | 800V | 20A | 200A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK28-01AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 100V | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Z86E0412SEGR538P | IXYS |
Min: 1 Mult: 1 |
https://pdf.utmel.com/r/datasheets/ixys-z86e0412segr538ptr-datasheets-7129.pdf | 14 | Z8 | 125B | EPROM | 1KB | Z8 | -40 | 105 | 4.5 | 5.5 | 5 | Extended | 8542.31.00.01 | 1650 | Z8 | CISC | 12 | 12 | 8 | Yes | 2 | 16MB | 1 | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCD72-08IO1B | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/ixys-mcc7216io1b-datasheets-0025.pdf | TO-240AA | 5 | 25 Weeks | 5 | yes | UL RECOGNIZED | UPPER | UNSPECIFIED | NOT SPECIFIED | MC*72 | 5 | NOT SPECIFIED | 1 | Silicon Controlled Rectifiers | Not Qualified | 180A | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200mA | 1840 A | 800V | SCR | 800V | 800V | 180A | 2.5V | 1700A 1800A | 150mA | 115A | G-GR | Series Connection - SCR/Diode | 1 SCR, 1 Diode | A-K-AK |
