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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Voltage | Isolation Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Peak Reverse Current | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Trigger Device Type | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Thermal Resistance @ Natural | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Diode Configuration | Vce(on) (Max) @ Vge, Ic | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFC110N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc110n10p-datasheets-4257.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 25ns | 25 ns | 65 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 250A | 0.017Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 17m Ω @ 55A, 10V | 5V @ 4mA | 60A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL60N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl60n60-datasheets-4329.pdf | ISOPLUS264™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | 52ns | 26 ns | 110 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 700W Tc | 240A | 0.08Ohm | 4000 mJ | 600V | N-Channel | 10000pF @ 25V | 80m Ω @ 30A, 10V | 4V @ 8mA | 60A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N50Q | IXYS | $3.31 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | TO-247-3 | Lead Free | 3 | 160mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 416W | 1 | FET General Purpose Power | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 500V | N-Channel | 4925pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN280N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfn280n07-datasheets-4610.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 90ns | 50 ns | 85 ns | 280A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 1120A | 0.005Ohm | 3000 mJ | 70V | N-Channel | 9400pF @ 25V | 5m Ω @ 120A, 10V | 4V @ 8mA | 280A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX21N100F | IXYS |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx21n100f-datasheets-3032.pdf | TO-247-3 | 3 | 10 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 16ns | 15 ns | 55 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5500pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | TO-247-3 | 3 | yes | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 360W Tc | TO-247AD | 14A | 56A | 0.75Ohm | 1500 mJ | N-Channel | 4500pF @ 25V | 750m Ω @ 7A, 10V | 5V @ 4mA | 14A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX80N15Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD26N60Q-8XQ | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1316 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM11P50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | e0 | Tin/Lead (Sn/Pb) | NO | 150°C | Other Transistors | Single | P-CHANNEL | 200W | METAL-OXIDE SEMICONDUCTOR | 11A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD430MYI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDD430MYI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN430CI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDN430CI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH21N50 | IXYS | $0.63 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth24n50-datasheets-4211.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 250mOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 84A | 500V | N-Channel | 4200pF @ 25V | 250m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT170N25X3HV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH42N60P3 | IXYS | $7.56 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh42n60p3-datasheets-2199.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | Not Qualified | 32 ns | 23ns | 17 ns | 60 ns | 42A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 830W Tc | 100A | 0.185Ohm | 600V | N-Channel | 5150pF @ 25V | 185m Ω @ 500mA, 10V | 5V @ 4mA | 42A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH180N20X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft180n20x3hv-datasheets-1427.pdf | TO-247-3 | 19 Weeks | 200V | 780W Tc | N-Channel | 10300pF @ 25V | 7.5m Ω @ 90A, 10V | 4.5V @ 4mA | 180A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKK85N60C | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixkk85n60c-datasheets-2508.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 12 Weeks | 36MOhm | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 10 ns | 110 ns | 85A | 20V | SILICON | SWITCHING | 1800 mJ | 600V | N-Channel | 36m Ω @ 55A, 10V | 4V @ 4mA | 85A Tc | 650nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH16N20D2 | IXYS | $9.79 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n20d2-datasheets-7254.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 695W Tc | 0.073Ohm | N-Channel | 5500pF @ 25V | 73m Ω @ 8A, 0V | 16A Tc | 208nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA40IM800PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | RoHS Compliant | TO-263-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 185W | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 300A | CATHODE | EFFICIENCY | SILICON | 10μA | 800V | TO-263AB | 1.15V | RECTIFIER DIODE | 800V | 40A | 275A | 1 | 0.25 °C/W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG30IM600PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dhg30im600pc-datasheets-1342.pdf | TO-263 | 2 | 1.59999g | yes | EAR99 | FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | Common Anode | 1 | Rectifier Diodes | R-PSSO-G2 | 3.18V | 200A | 50μA | CATHODE | FAST SOFT RECOVERY | SILICON | 200A | 35 ns | 35 ns | RECTIFIER DIODE | 600V | 30A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK28-0045BS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 45V | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS6-0045AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Tape and Reel | 175°C | -55°C | SCHOTTKY | RoHS Compliant | TO-252-3 | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 710mV | 80A | 300μA | CATHODE | POWER | SILICON | 80A | TO-252AA | RECTIFIER DIODE | 45V | 6A | 1 | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MLO175-16IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/ixys-mmo17516io7-datasheets-0518.pdf | Module | 5 | 3 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | MLO | 6 | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X5 | 125A | SINGLE WITH BUILT-IN ANTI-PARALLEL DIODE | ISOLATED | 200mA | 1.6kV | SCR | 1600V | 125A | 1.5V | 1500A 1600A | 100mA | 80A | 1-Phase Controller - SCR/Diode | 1 SCR, 1 Diode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA360UB1600PTED | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~150°C TJ | Standard | E2 | 20 Weeks | compliant | Three Phase (Braking) | 1.6kV | 100μA @ 1.6kV | 1.8V @ 360A | 360A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH25N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1997 | /files/ixys-ixgh25n100-datasheets-5494.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 200W | SINGLE | NOT SPECIFIED | IXG*25N100 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 1kV | 350 ns | 3.5V | 50A | 1000V | 1670 ns | 800V, 25A, 33 Ω, 15V | 20V | 5V | 3.5V @ 15V, 25A | 130nC | 100A | 100ns/500ns | 5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT10N170 | IXYS |
Min: 1 Mult: 1 |
download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixbt10n170-datasheets-0704.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 4.500005g | yes | unknown | e3 | PURE TIN | 140W | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 140W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 360 ns | 1.7kV | 3.4V | 63 ns | 1.7kV | 20A | 1700V | 1800 ns | 1360V, 10A, 56 Ω, 15V | 20V | 5V | 3.8V @ 15V, 10A | 30nC | 40A | 35ns/500ns | 6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA600P1600PTSF | IXYS |
Min: 1 Mult: 1 |
download | MDMA600P1600PTSF | Chassis Mount | SimBus F | 16 Weeks | Standard | 1600V | 600A | 1 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ110A16K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz110a16k-datasheets-7630.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ110 | 3 | NOT SPECIFIED | 2 | Not Qualified | 18.3V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 1.6kV | Standard | 16kV | 3.5A | 1 | 16000V | 500μA @ 16800V | 18.3V @ 12A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ280H28K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz280h28k-datasheets-7694.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ280 | 3 | NOT SPECIFIED | 2 | Not Qualified | 23V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 28kV | Standard | 28kV | 4.7A | 1 | 28000V | 500μA @ 28000V | 23V @ 12A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ160C12K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz160c14k-datasheets-7587.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ160 | 3 | NOT SPECIFIED | 2 | Not Qualified | 12V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 12kV | Standard | 12kV | 1.7A | 1 | 12000V | 500μA @ 12000V | 12V @ 2A | 1 Pair Series Connection |
