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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFL30N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl30n120p-datasheets-1097.pdf | ISOPLUSi5-Pak™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 357W Tc | 80A | 1500 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 380m Ω @ 15A, 10V | 6.5V @ 1mA | 18A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFN26N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n100p-datasheets-1147.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 595W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 595W Tc | 65A | 0.39Ohm | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 23A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXTX3N250L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 24 Weeks | compliant | 2500V | 417W Tc | N-Channel | 5400pF @ 25V | 10 Ω @ 1.5A, 10V | 5V @ 1mA | 3A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP44N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 44A | 150V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N85XM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n85xm-datasheets-1671.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 850V | 33W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n50p3-datasheets-1948.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 24 Weeks | 3 | Single | FET General Purpose Power | 13 ns | 29 ns | 8A | 30V | 500V | 180W Tc | 8A | N-Channel | 705pF @ 25V | 800m Ω @ 4A, 10V | 5V @ 1.5mA | 8A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTP10P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10p15t-datasheets-2123.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Tc | TO-220AB | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| IXTA1R6N100D2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | 3 | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP1N80 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n80-datasheets-1682.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | Not Qualified | 19ns | 28 ns | 40 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | TO-220AB | 0.75A | 3A | 100 mJ | 800V | N-Channel | 220pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 25μA | 750mA Tc | 8.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFA76N15T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 350W Tc | N-Channel | 5800pF @ 25V | 22m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH56N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 56A | 150V | N-Channel | 56A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 86W Tc | N-Channel | 666pF @ 25V | 13 Ω @ 700mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N100P | IXYS | $2.55 |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100p-datasheets-1536.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | TO-220AB | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXFA12N50P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 500V | 200W Tc | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 1mA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460 | IXYS | $2.72 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp460-datasheets-5147.pdf | 500V | 20A | TO-3P-3 Full Pack | Lead Free | 3 | 3 | yes | No | 3 | Single | 260W | 1 | FET General Purpose Power | 81ns | 65 ns | 85 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 260W Tc | TO-247AD | 80A | 0.27Ohm | 500V | N-Channel | 4200pF @ 25V | 270m Ω @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTP1R6N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50p-datasheets-5758.pdf | 500V | 1A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 43W | 1 | Not Qualified | 26ns | 23 ns | 45 ns | 1.6A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 43W Tc | TO-220AB | 2.5A | 75 mJ | 500V | N-Channel | 140pF @ 25V | 6.5 Ω @ 500mA, 10V | 5.5V @ 25μA | 1.6A Tc | 3.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTV18N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFV26N60PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n60p-datasheets-1292.pdf | 600V | 26A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 4mA | 26A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTA3N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFT15N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 5V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFV96N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n15p-datasheets-0503.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFV110N10P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n10p-datasheets-5469.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 25ns | 25 ns | 65 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.015Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 4mA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTA180N085T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n085t7-datasheets-7519.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 70ns | 65 ns | 55 ns | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 480A | 0.0055Ohm | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTH180N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth180n085t-datasheets-7552.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 65 ns | 55 ns | 180A | SILICON | DRAIN | SWITCHING | 430W Tc | 480A | 0.0055Ohm | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTP240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t-datasheets-7497.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 650A | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTP8N50PM | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50pm-datasheets-7623.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 41W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 23 ns | 65 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 41W Tc | TO-220AB | 4A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTU44N10T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 44A | 100V | N-Channel | 4.5V @ 25μA | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY50N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n085t-datasheets-7614.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 33 ns | 38 ns | 50A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-252AA | 250 mJ | 85V | N-Channel | 1460pF @ 25V | 23m Ω @ 25A, 10V | 4V @ 25μA | 50A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTY5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFK120N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n20-datasheets-8098.pdf | 200V | 120A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±20V |
