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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTX20N150 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtx20n150-datasheets-3657.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 1 | FET General Purpose Power | R-PSIP-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 1250W Tc | 50A | 1Ohm | 2500 mJ | N-Channel | 7800pF @ 25V | 1 Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFK64N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk64n50q3-datasheets-3727.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | 36 ns | 250ns | 46 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 160A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 85m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTH26N60P | IXYS | $42.66 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-247-3 | Lead Free | 3 | 28 Weeks | 270MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 460W | 1 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-247AD | 65A | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTA140P05T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140p05t-datasheets-1699.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 298W | 1 | Other Transistors | R-PSSO-G2 | 140A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 298W Tc | 420A | 0.009Ohm | P-Channel | 13500pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| IXFR32N100Q3 | IXYS | $38.89 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfr32n100q3-datasheets-3868.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 570W | 1 | FET General Purpose Power | R-PSIP-T3 | 45 ns | 300ns | 54 ns | 23A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 570W Tc | 96A | 0.35Ohm | 3000 mJ | 1kV | N-Channel | 9940pF @ 25V | 350m Ω @ 16A, 10V | 6.5V @ 8mA | 23A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH3N120 | IXYS | $7.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | TO-247AD | 3A | 12A | 700 mJ | 1.2kV | N-Channel | 1300pF @ 25V | 4.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTV130N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 130A | 150V | N-Channel | 130A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA64N10L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 32A, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-247-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDM15-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd1506kc5-datasheets-3967.pdf | ISOPLUSi5-Pak™ | 5 | yes | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTF200N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf200n10t-datasheets-4126.pdf | i4-Pac™-5 | 3 | 28 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 156W Tc | 0.007Ohm | 100V | N-Channel | 9400pF @ 25V | 7m Ω @ 50A, 10V | 4.5V @ 250μA | 90A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFT80N65X2HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 38m Ω @ 40A, 10V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT69N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh69n30p-datasheets-4070.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 27 ns | 75 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.049Ohm | 1500 mJ | 300V | N-Channel | 4960pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 4mA | 69A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTT88N15 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtt88n15-datasheets-4249.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | R-PSSO-G2 | 33ns | 18 ns | 80 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 352A | 0.022Ohm | 150V | N-Channel | 4000pF @ 25V | 22m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTT10P60 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth10p60-datasheets-2057.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 40A | 1Ohm | P-Channel | 4700pF @ 25V | 1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTH440N055T2 | IXYS | $54.19 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n055t2-datasheets-3581.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 440A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1000W Tc | 1200A | 0.0018Ohm | 1500 mJ | N-Channel | 25000pF @ 25V | 1.8m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT30N85XHV | IXYS | $13.43 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | unknown | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT10N100D2 | IXYS | $16.36 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH14N80 | IXYS | $3.69 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n80-datasheets-4421.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 250 ns | 56A | 0.7Ohm | 800V | N-Channel | 4870pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFT30N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50q3-datasheets-3628.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 250ns | 26 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 90A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3200pF @ 25V | 200m Ω @ 15A, 10V | 6.5V @ 4mA | 30A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT58N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 40MOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 16 ns | 72 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 232A | 200V | N-Channel | 4400pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTK102N65X2 | IXYS | $15.87 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtk102n65x2-datasheets-4817.pdf | TO-264-3, TO-264AA | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 102A | 650V | 1040W Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 102A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N10Q | IXYS | $2.05 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n10q-datasheets-8192.pdf | 100V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 150mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | 70ns | 30 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTP20N65X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 650V | 36W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP18N65X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP18N60PM | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18n60pm-datasheets-9972.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 90W Tc | TO-220AB | 9A | 54A | 0.42Ohm | 1000 mJ | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 9A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTQ72N20T | IXYS | $16.84 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 72A | 200V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP5N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 250W | 1 | FET General Purpose Power | R-PSFM-T3 | 5A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 250W Tc | TO-220AB | 5A | 300 mJ | 1kV | N-Channel | 1830pF @ 25V | 2.8 Ω @ 500mA, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTH20N65X2 | IXYS | $6.16 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V |
