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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH160N15T | IXYS | $17.08 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth160n15t-datasheets-4041.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 830W Tc | TO-247AD | 430A | 0.0096Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 9.6m Ω @ 500mA, 10V | 5V @ 1mA | 160A Tc | 160nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFT88N30P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 300V | 600W Tc | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR15N100P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1000V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ120N20P | IXYS | $16.35 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 714W | 1 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT24N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 96A | 0.23Ohm | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFT20N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n100p-datasheets-7106.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 570MOhm | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37ns | 45 ns | 56 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 660W Tc | 50A | 800 mJ | 1kV | N-Channel | 7300pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 126nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTH1N170DHV | IXYS | $14.02 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta1n170dhv-datasheets-5626.pdf | TO-247-3 Variant | 24 Weeks | compliant | 1700V | 290W Tc | N-Channel | 3090pF @ 25V | 16 Ω @ 500mA, 0V | 4.5V @ 250μA | 1A Tj | 47nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ6N150 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtj6n150-datasheets-4341.pdf | TO-247-3 | 3 | 24 Weeks | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 1 | R-PSFM-T3 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 1500V | 125W Tc | 3A | 24A | 500 mJ | N-Channel | 2230pF @ 25V | 3.85 Ω @ 3A, 10V | 5V @ 250μA | 3A Tc | 67nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFH60N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n20-datasheets-4371.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 63ns | 26 ns | 85 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 240A | 2500 mJ | 200V | N-Channel | 5200pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 4mA | 60A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTH420N04T2 | IXYS | $35.15 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth420n04t2-datasheets-4398.pdf | TO-247-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 420A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 935W Tc | 1050A | 0.002Ohm | 960 mJ | N-Channel | 19700pF @ 25V | 2m Ω @ 100A, 10V | 3.5V @ 250μA | 420A Tc | 315nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR64N50P | IXYS | $18.31 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50p-datasheets-4441.pdf | 500V | 64A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 25ns | 22 ns | 85 ns | 35A | 30V | SILICON | ISOLATED | SWITCHING | 5.5V | 300W Tc | TO-247AD | 150A | 0.095Ohm | 2500 mJ | 500V | N-Channel | 8700pF @ 25V | 95m Ω @ 32A, 10V | 5.5V @ 8mA | 35A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||
| IXFK80N15Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| VMO550-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo55001f-datasheets-4575.pdf | Y3-DCB | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 2.2kW | 1 | FET General Purpose Power | Not Qualified | 500ns | 200 ns | 800 ns | 590A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2200W Tc | 2360A | 0.0021Ohm | 100V | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 6V @ 110mA | 590A Tc | 2000nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFN150N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n10-datasheets-7652.pdf | 100V | 150A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 12mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXFA20N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFP22N65X2M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 37W Tc | N-Channel | 2190pF @ 25V | 145m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA18N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100d2hv-datasheets-9918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | 3A | 6Ohm | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA76N25T | IXYS | $0.89 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 170A | 0.039Ohm | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFQ12N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfq12n80p-datasheets-0104.pdf | TO-3P-3, SC-65-3 | 3 | 14 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTH36P10 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth36p10-datasheets-0213.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 37ns | 28 ns | 65 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 100V | 180W Tc | TO-247AD | 144A | 0.075Ohm | -100V | P-Channel | 2800pF @ 25V | 75m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1200V | 200W Tc | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N80P | IXYS | $18.78 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n80p-datasheets-0394.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 36A | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFA6N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa6n120p-datasheets-9264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1200V | 250W Tc | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH102N15T | IXYS | $14.85 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfa102n15t-datasheets-0109.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 102A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | 300A | 0.018Ohm | 750 mJ | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFA130N15X3TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX88N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 15 ns | 61 ns | 88A | 30V | SILICON | DRAIN | 500W Tc | 2500 mJ | 200V | N-Channel | 4150pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 4mA | 88A Tc | 146nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTK62N25 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtk62n25-datasheets-0638.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 15 ns | 115 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 248A | 0.035Ohm | 1500 mJ | 250V | N-Channel | 5400pF @ 25V | 35m Ω @ 31A, 10V | 4V @ 250μA | 62A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFT12N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft10n100-datasheets-4440.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 48A | 1kV | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFT40N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 160A | 0.14Ohm | 2 mJ | 500V | N-Channel | 3800pF @ 25V | 140m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V |
