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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH30N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-247-3 | 19 Weeks | yes | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT440N04T4HV | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n04t4hv-datasheets-2739.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | yes | unknown | 440A | 40V | 940W Tc | N-Channel | 26000pF @ 25V | 1.25m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 480nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU55N075T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 55A | 75V | N-Channel | 4V @ 25μA | 55A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N65X2 | IXYS | $1.86 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA50N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta50n20p-datasheets-3223.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTT88N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq88n30p-datasheets-2251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | R-PSSO-G2 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFX32N100Q3 | IXYS | $112.35 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 20 Weeks | 247 | EAR99 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 0.32Ohm | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTH1N450HV | IXYS | $35.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n450hv-datasheets-9122.pdf | TO-247-3 Variant | 24 Weeks | 1A | 4500V | 520W Tc | N-Channel | 1700pF @ 25V | 80 Ω @ 50mA, 10V | 6V @ 250μA | 1A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH52P10P | IXYS | $7.08 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta52p10p-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 50MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 130A | 1500 mJ | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTT74N20P | IXYS | $26.24 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt74n20p-datasheets-3845.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 34MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 250μA | 74A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTQ470P2 | IXYS | $15.45 |
Min: 1 Mult: 1 |
download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq470p2-datasheets-3877.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1300 mJ | 500V | N-Channel | 5400pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 250μA | 42A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTV102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 102A | 250V | N-Channel | 102A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA30N65X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH35N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkh35n60c5-datasheets-3990.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 20 Weeks | 100MOhm | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 800 mJ | 600V | N-Channel | 2800pF @ 100V | 100m Ω @ 18A, 10V | 3.9V @ 1.2mA | 35A Tc | 70nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT96N20P | IXYS | $9.01 |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n20p-datasheets-3565.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFQ50N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-3600.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT36N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFT70N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n15-datasheets-4193.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 52ns | 23 ns | 70 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 280A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 70A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTH6N80A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n80a-datasheets-4232.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 6A | 24A | 800V | N-Channel | 2800pF @ 25V | 1.4 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH94N30T | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh94n30t-datasheets-4270.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 94A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 890W Tc | TO-247AD | 235A | 0.036Ohm | 500 mJ | N-Channel | 11400pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR70N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr70n15-datasheets-4295.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 52ns | 25 ns | 70 ns | 67A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 70A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 67A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FMD21-05QC | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd2105qc-datasheets-4340.pdf | i4-Pac™-5 | Lead Free | 5 | 20 Weeks | 190MOhm | 5 | yes | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 5 | Single | 192W | 1 | FET General Purpose Power | 20ns | 15 ns | 50 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 500V | N-Channel | 220m Ω @ 15A, 10V | 4.5V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFT40N85XHV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n85x-datasheets-2899.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | unknown | 40A | 850V | 860W Tc | N-Channel | 3700pF @ 25V | 145m Ω @ 500mA, 10V | 5.5V @ 4mA | 40A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR30N25 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixtr30n25-datasheets-4395.pdf | ISOPLUS247™ | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | 150W Tc | 120A | 0.075Ohm | 1000 mJ | 250V | N-Channel | 3950pF @ 25V | 75m Ω @ 15A, 10V | 4V @ 250μA | 25A Tc | 136nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT10N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft10n100-datasheets-4440.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTR68P20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | ISOPLUS247™ | 3 | 1 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | compliant | NO | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 270W Tc | 44A | 200A | 0.064Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 64m Ω @ 34A, 10V | 4V @ 250μA | 44A Tc | 380nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IXTH14N80 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth14n80-datasheets-4559.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 56A | 0.7Ohm | 800V | N-Channel | 4500pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 250μA | 14A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH10N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh10n90-datasheets-7620.pdf | 900V | 10A | TO-247-3 | Contains Lead | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12ns | 18 ns | 51 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 40A | 900V | N-Channel | 4200pF @ 25V | 1.1 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA16N50P | IXYS | $27.56 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTU02N50D | IXYS | $1.54 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | Not Qualified | R-PSIP-T3 | 4ns | 4 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 5V @ 25μA | 200mA Tc | Depletion Mode | 10V | ±20V |
