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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Diode Type | Max Reverse Voltage (DC) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MDO1200-16N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | Y1-CU | MDO1200 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.6kV | 1600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N200P3HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH170N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-247-3 | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX2F60N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | -55°C~150°C TJ | /files/ixys-mmix2f60n50p3-datasheets-0394.pdf | 24-SMD Module, 9 Leads | 30 Weeks | compliant | 500V | 320W | 2 N-Channel (Dual) | 6250pF @ 25V | 110m Ω @ 30A, 10V | 5V @ 4mA | 30A Tc | 96nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN32N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n100p-datasheets-0268.pdf | SOT-227-4, miniBLOC | Lead Free | 30 Weeks | 320mOhm | 4 | No | 690W | 1 | SOT-227B | 14.2nF | 55ns | 43 ns | 76 ns | 27A | 30V | 1000V | 690W Tc | 320mOhm | 1kV | N-Channel | 14200pF @ 25V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 27A Tc | 225nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFK140N25T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk140n25t-datasheets-4863.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 960W Tc | 380A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 140A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA6N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 500V | 300W Tc | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 96nC @ 5V | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N50D2 | IXYS | $42.08 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | 3 | yes | UL RECOGNIZED | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 100W Tc | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK400N15X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfk400n15x3-datasheets-2388.pdf | TO-264-3, TO-264AA | 19 Weeks | compliant | 150V | 1250W Tc | N-Channel | 23.7nF @ 25V | 3m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N85XM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n85xm-datasheets-5212.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 35W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36N50P | IXYS | $36.88 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-247-3 | Lead Free | 3 | No SVHC | 170MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 540W Tc | TO-247AD | 108A | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 5 V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTT240N15X4HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth240n15x4-datasheets-5560.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | 150V | 940W Tc | N-Channel | 8900pF @ 25V | 4.4m Ω @ 120A, 10V | 4.5V @ 250μA | 240A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2 | IXYS | $8.93 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n100d2-datasheets-2865.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | TO-263AA | N-Channel | 1020pF @ 25V | 5.5 Ω @ 1.5A, 0V | 3A Tc | 37.5nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA120P065T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120p065t-datasheets-5518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 10MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 28ns | 21 ns | 120A | 15V | SILICON | DRAIN | SWITCHING | 65V | 298W Tc | 0.12A | 360A | 1000 mJ | -65V | P-Channel | 13200pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| IXFX420N10T | IXYS | $2.14 |
Min: 1 Mult: 1 |
download | GigaMOS™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx420n10t-datasheets-7144.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 420A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1670W Tc | 0.0026Ohm | 5000 mJ | N-Channel | 47000pF @ 25V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 420A Tc | 670nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTY8N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 180W | 1 | FET General Purpose Power | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFP5N100PM | IXYS | $7.20 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100pm-datasheets-2755.pdf | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 2.3A | 1000V | 42W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 2.3A Tc | 33.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU64N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 64A | 55V | N-Channel | 4V @ 25μA | 64A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n70x2m-datasheets-1751.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | yes | 700V | 32W Tc | N-Channel | 800pF @ 10V | 550m Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36P15P-TRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta36p15ptrl-datasheets-9545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 150V | 300W Tc | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N20X3 | IXYS | $8.42 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3-datasheets-4593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 200V | 320W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N300P3HV | IXYS | $33.68 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-247-3 Variant | 24 Weeks | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK8N150L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk8n150l-datasheets-3766.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 700W Tc | 8A | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 8A Tc | 250nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFP18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-220-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV60N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 60A | 300V | N-Channel | 60A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N65X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT36P10 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 36A | 100V | P-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N60P | IXYS | $15.84 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 80A | 0.24Ohm | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFT120N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n15p-datasheets-5523.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 16MOhm | yes | EAR99 | AVALANCHE ENERGY RATED | unknown | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 260A | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V |
