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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-247-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDM15-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd1506kc5-datasheets-3967.pdf | ISOPLUSi5-Pak™ | 5 | yes | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTF200N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf200n10t-datasheets-4126.pdf | i4-Pac™-5 | 3 | 28 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 156W Tc | 0.007Ohm | 100V | N-Channel | 9400pF @ 25V | 7m Ω @ 50A, 10V | 4.5V @ 250μA | 90A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFT80N65X2HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 38m Ω @ 40A, 10V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT69N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh69n30p-datasheets-4070.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 27 ns | 75 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.049Ohm | 1500 mJ | 300V | N-Channel | 4960pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 4mA | 69A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTT88N15 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtt88n15-datasheets-4249.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | R-PSSO-G2 | 33ns | 18 ns | 80 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 352A | 0.022Ohm | 150V | N-Channel | 4000pF @ 25V | 22m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTT10P60 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth10p60-datasheets-2057.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 40A | 1Ohm | P-Channel | 4700pF @ 25V | 1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH440N055T2 | IXYS | $54.19 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n055t2-datasheets-3581.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 440A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1000W Tc | 1200A | 0.0018Ohm | 1500 mJ | N-Channel | 25000pF @ 25V | 1.8m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 405nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFT30N85XHV | IXYS | $13.43 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | unknown | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT10N100D2 | IXYS | $16.36 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFH14N80 | IXYS | $3.69 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n80-datasheets-4421.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 250 ns | 56A | 0.7Ohm | 800V | N-Channel | 4870pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFT30N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50q3-datasheets-3628.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 250ns | 26 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 90A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3200pF @ 25V | 200m Ω @ 15A, 10V | 6.5V @ 4mA | 30A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFT58N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 40MOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 16 ns | 72 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 232A | 200V | N-Channel | 4400pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTK102N65X2 | IXYS | $15.87 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtk102n65x2-datasheets-4817.pdf | TO-264-3, TO-264AA | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 102A | 650V | 1040W Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 102A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N10Q | IXYS | $2.05 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n10q-datasheets-8192.pdf | 100V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 150mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | 70ns | 30 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTP20N65X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 650V | 36W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP18N65X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP18N60PM | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18n60pm-datasheets-9972.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 90W Tc | TO-220AB | 9A | 54A | 0.42Ohm | 1000 mJ | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 9A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTQ72N20T | IXYS | $16.84 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 72A | 200V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP5N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 250W | 1 | FET General Purpose Power | R-PSFM-T3 | 5A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 250W Tc | TO-220AB | 5A | 300 mJ | 1kV | N-Channel | 1830pF @ 25V | 2.8 Ω @ 500mA, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH20N65X2 | IXYS | $6.16 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH96N25T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | TO-247AD | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTQ86N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 540W Ta | 86A | 190A | 0.037Ohm | 1500 mJ | N-Channel | 5330pF @ 25V | 37m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFA7N100P | IXYS | $60.34 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 7A | 18A | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH68P20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt68p20t-datasheets-8430.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 68A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 568W Tc | TO-247AD | 200A | 0.055Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 55m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 380nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXTQ102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 102A | 250V | N-Channel | 102A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N120P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1200V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N90P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V |
