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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Output Current Flow Direction | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUP90N03-03-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n0303e3-datasheets-3373.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 2.9MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 55 ns | 180ns | 12 ns | 55 ns | 28.8A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.75W Ta 250W Tc | TO-220AB | 90A | 90A | 64.8 mJ | N-Channel | 12065pF @ 15V | 2.9m Ω @ 28.8A, 10V | 2.5V @ 250μA | 90A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | ULTRA LOW RESISTANCE | No | Pure Matte Tin (Sn) | 1.1W | 260 | SI5908 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Powers | 20 ns | 36ns | 12 ns | 30 ns | 4.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 6.000006g | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ900E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjq900et1ge3-datasheets-6735.pdf | PowerPAK® 8 x 8 Dual | Lead Free | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 75W | 60A | 400A | 0.0039Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.9m Ω @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 120nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA18DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa18dnt1ge3-datasheets-2778.pdf | PowerPAK® 1212-8 | 7.5mOhm | 1 | PowerPAK® 1212-8 | 1nF | 22 ns | 20ns | 14 ns | 30 ns | 38.3A | 2.4V | 30V | 3.2W Ta 19.8W Tc | 7.5mOhm | 30V | N-Channel | 1000pF @ 15V | 7.5mOhm @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 7.5 mΩ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431cdyt1ge3-datasheets-8251.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 89ns | 11 ns | 23 ns | -9A | 20V | SILICON | SWITCHING | 30V | -2.5V | 2.5W Ta 4.2W Tc | 7A | -30V | P-Channel | 1006pF @ 15V | 32m Ω @ 7A, 10V | 2.5V @ 250μA | 9A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4860DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4860dyt1ge3-datasheets-6401.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 4.5nF | 18 ns | 12ns | 12 ns | 46 ns | 16A | 20V | SILICON | SWITCHING | 1V | 1.6W Ta | 30V | N-Channel | 1 V | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9435BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9435bdyt1e3-datasheets-9791.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 12 Weeks | 186.993455mg | Unknown | 42mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 14 ns | 14ns | 14 ns | 42 ns | -5.7A | 20V | SILICON | 30V | 30V | -1V | 1.3W Ta | P-Channel | -1 V | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 4.1A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR644DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir644dpt1ge3-datasheets-8356.pdf | PowerPAK® SO-8 | 5 | 15 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 5.2W | 1 | R-PDSO-C5 | 13 ns | 5ns | 5 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 69W Tc | 200A | 0.0027Ohm | 40V | N-Channel | 3200pF @ 20V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7137DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7137dpt1ge3-datasheets-0739.pdf | PowerPAK® SO-8 | 6.15mm | 1.12mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.95mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 100 ns | 150ns | 110 ns | 230 ns | -60A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 42A | -20V | P-Channel | 20000pF @ 10V | -1.4 V | 1.95m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 585nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n65ege3-datasheets-9424.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AD | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR882DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir882dpt1ge3-datasheets-1286.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5.4W Ta 83W Tc | 45 mJ | 100V | N-Channel | 1930pF @ 50V | 1.2 V | 8.7m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 58nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR814DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir814dpt1ge3-datasheets-9493.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 6.25W Ta 104W Tc | 0.0029Ohm | N-Channel | 3800pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2325DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2325dst1e3-datasheets-4364.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 1.2Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 7 ns | 16 ns | -690mA | 20V | SILICON | SWITCHING | 150V | -4.5V | 750mW Ta | -150V | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 530mA Ta | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Lead Free | 3Ohm | 3 | No | 11A | 60V | 1 | Single | 6.25W | 1 | TO-205AD (TO-39) | 50pF | 1.1A | 20V | 60V | 725mW Ta 6.25W Tc | 3Ohm | 60V | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7431DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7431dpt1e3-datasheets-5285.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 174mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 23 ns | 49ns | 49 ns | 110 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 1.9W Ta | 2.2A | 30A | 45 mJ | -200V | P-Channel | -4 V | 174m Ω @ 3.8A, 10V | 4V @ 250μA | 2.2A Ta | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sq2319est1ge3-datasheets-6546.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | No | 3W | DUAL | GULL WING | 260 | SQ2319 | 3 | Single | 40 | 3W | 1 | Other Transistors | 7 ns | 15ns | 25 ns | 25 ns | -4.6A | 20V | SWITCHING | 40V | -2V | 0.082Ohm | -40V | P-Channel | 620pF @ 25V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ402EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj402ept1ge3-datasheets-7757.pdf | 8-PowerTDFN | 4.9mm | 1.07mm | 4.37mm | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 7 ns | 27 ns | 32A | 20V | SILICON | DRAIN | 100V | 2V | 83W Tc | 75A | N-Channel | 2289pF @ 40V | 11m Ω @ 10A, 10V | 2.5V @ 250μA | 32A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N02-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n0206pe3-datasheets-9904.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 15 Weeks | 1.437803g | 6mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 6.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 10ns | 9 ns | 24 ns | 26A | 20V | 20V | SILICON | DRAIN | SWITCHING | 6.8W Ta 65W Tc | 20V | N-Channel | 2550pF @ 10V | 3 V | 6m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N10-8M9L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n108m9lge3-datasheets-8369.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.22mm | 2.38mm | 6.73mm | 12 Weeks | 1.437803g | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 12 ns | 12ns | 120 ns | 95 ns | 50A | 2V | 100V | 136W Tc | N-Channel | 2950pF @ 25V | 8.9m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7102DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7102dnt1ge3-datasheets-0197.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 52mW | 1 | FET General Purpose Powers | S-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 25A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.8W Ta 52W Tc | 35A | 60A | N-Channel | 3720pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR424DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir424dpt1ge3-datasheets-1847.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.8W | 1 | FET General Purpose Powers | R-PDSO-C5 | 18 ns | 12ns | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 23.4A | 70A | 20V | N-Channel | 1250pF @ 10V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M4L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR466DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir466dpt1ge3-datasheets-3474.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.5mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 30 ns | 9ns | 9 ns | 35 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 54W Tc | 70A | 45 mJ | 30V | N-Channel | 2730pF @ 15V | 3.5m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32101DB-T1-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32101dbt1ge1-datasheets-4693.pdf | 12-UFBGA, CSPBGA | 22 Weeks | 5.5V | 2.3V | 13mOhm | 12 | On/Off | No | Slew Rate Controlled | 1.096W | 12-WCSP (1.71x1.31) | 5A | P-Channel | 2.3V~5.5V | 500 μs | 2.4 ms | 1 | General Purpose | High Side | 5A | Not Required | 6.5mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA461DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia461djt1ge3-datasheets-5949.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.4W | 1 | S-PDSO-N3 | 20 ns | 22ns | 20 ns | 50 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.4W Ta 17.9W Tc | 20A | 0.033Ohm | -20V | P-Channel | 1300pF @ 10V | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 12A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32468DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32468dbt2ge1-datasheets-2879.pdf | 4-UFBGA, WLCSP | 20 Weeks | 54mOhm | 4 | On/Off | unknown | Load Discharge, Slew Rate Controlled | 300mW | SPST | 1.2A | N-Channel | 1.2V~5.5V | 300 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 50m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2342DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2342dst1ge3-datasheets-6875.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.3W | 1 | FET General Purpose Powers | 150°C | 6 ns | 14ns | 25 ns | 65 ns | 6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800mV | 2.5W Tc | 6A | 8V | N-Channel | 1070pF @ 4V | 17m Ω @ 7.2A, 4.5V | 800mV @ 250μA | 6A Tc | 15.8nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4282DNP3-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip4282adnp3t1ge4-datasheets-7143.pdf | 4-UFDFN Exposed Pad | 4 | 16 Weeks | 50.008559mg | 480mOhm | 4 | On/Off | yes | EAR99 | unknown | Load Discharge, Slew Rate Controlled | Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier | 324mW | DUAL | NO LEAD | 260 | 0.5mm | 4 | 30 | Peripheral Drivers | 2/5V | Not Qualified | 1.4A | P-Channel | 1.8V~5.5V | 20 μs | 4 μs | 1 | General Purpose | High Side | UVLO | SOURCE | 1 | Not Required | 105m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ342ADT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz342adtt1ge3-datasheets-1833.pdf | 8-PowerWDFN | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 580pF @ 15V | 9.4mOhm @ 10A, 10V | 2.4V @ 250μA | 15.7A Ta 33.4A Tc | 12.2nC @ 10V | Standard |
