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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7120ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7120adnt1ge3-datasheets-8323.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | S-PDSO-C5 | 14 ns | 12ns | 12 ns | 50 ns | 9.5A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 6A | 40A | 24 mJ | 60V | N-Channel | 21m Ω @ 9.5A, 10V | 3V @ 250μA | 6A Ta | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4368DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4368dyt1e3-datasheets-9508.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 3.2mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 25 ns | 20ns | 20 ns | 172 ns | 17A | 12V | SILICON | SWITCHING | 1.6W Ta | 30V | N-Channel | 8340pF @ 15V | 3.2m Ω @ 25A, 10V | 1.8V @ 250μA | 17A Ta | 80nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRF830ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ24GPBF | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz24gpbf-datasheets-1443.pdf | TO-220-3 Full Pack | 8 Weeks | TO-220 Full Pack | 60V | 37W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS434DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis434dnt1ge3-datasheets-7064.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 7.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 250 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 30 ns | 25ns | 20 ns | 40 ns | 35A | 20V | SILICON | DRAIN | 2.2V | 3.8W Ta 52W Tc | 60A | 45 mJ | 40V | N-Channel | 1530pF @ 20V | 7.6m Ω @ 16.2A, 10V | 2.2V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIR150DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir150dpt1re3-datasheets-8224.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 45V | 5.2W Ta 65.7W Tc | N-Channel | 4000pF @ 20V | 2.71mOhm @ 15A, 10V | 2.3V @ 250μA | 30.9A Ta 110A Tc | 70nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS05DN-T1-GE3 | Vishay Siliconix | $1.11 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss05dnt1ge3-datasheets-8611.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 30V | 5W Ta 65.7W Tc | P-Channel | 4930pF @ 15V | 3.5mOhm @ 10A, 10V | 2.2V @ 250μA | 29.4A Ta 108A Tc | 115nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA6N80AE-GE3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz260dtt1ge3-datasheets-8632.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 800V | 30W Tc | N-Channel | 422pF @ 100V | 950mOhm @ 2A, 10V | 4V @ 250μA | 5A Tc | 22.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF520STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp5n50dge3-datasheets-1990.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Powers | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SWITCHING | 500V | 500V | 104W Tc | TO-220AB | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQR100N04-3M8R_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N15-21-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup85n1521e3-datasheets-1315.pdf | 150V | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 300W | 1 | FET General Purpose Power | 22 ns | 170ns | 170 ns | 40 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 300W Tc | TO-220AB | 150V | N-Channel | 4750pF @ 25V | 2 V | 21m Ω @ 30A, 10V | 4V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFI9520GPBF | Vishay Siliconix | $7.12 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9520gpbf-datasheets-2429.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 390pF | 2.5kV | 9.6 ns | 29ns | 25 ns | 21 ns | 5.2A | 20V | 100V | -4V | 37W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | -4 V | 600mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHA25N60EFL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n60efle3-datasheets-2802.pdf | TO-220-3 Full Pack | 14 Weeks | 600V | 39W Tc | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFL9014TR-GE3 | Vishay Siliconix | $2.31 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl9014trpbf-datasheets-9739.pdf | TO-261-4, TO-261AA | 14 Weeks | 4 | 2W | 1 | SOT-223 | 1.8A | 20V | 60V | 2W Ta 3.1W Tc | P-Channel | 270pF @ 25V | 500mOhm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ474EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj474ept1ge3-datasheets-3703.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 100V | 45W Tc | N-Channel | 1100pF @ 25V | 30mOhm @ 10A, 10V | 2.5V @ 250μA | 26A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA438EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia438edjt1ge3-datasheets-4635.pdf | PowerPAK® SC-70-6 | 3 | 15 Weeks | 46mOhm | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 6 | 40 | 2.4W | 1 | FET General Purpose Powers | Not Qualified | S-XDSO-N3 | 12ns | 10 ns | 15 ns | 6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 11.4W Tc | 5.7A | 15A | 20V | N-Channel | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SIS322DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sis322dntt1ge3-datasheets-5324.pdf | PowerPAK® 1212-8 | 5 | 13 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | S-PDSO-C5 | 30 ns | 20ns | 14 ns | 30 ns | 38.3A | 2.4V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 3.2W Ta 19.8W Tc | 70A | 0.0075Ohm | 5 mJ | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| SIS472ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sis472adnt1ge3-datasheets-6845.pdf | PowerPAK® 1212-8 | 14 Weeks | 8.5mOhm | EAR99 | unknown | YES | 1 | 3.5W | FET General Purpose Power | 15A | 20V | Single | 30V | 28W Tc | 24A | N-Channel | 1515pF @ 15V | 8.5m Ω @ 10A, 10V | 2.4V @ 250μA | 24A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8401DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8401dbt1e1-datasheets-3105.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | Unknown | 65mOhm | 4 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 4 | 1 | Single | 40 | 2.77W | 1 | Other Transistors | 17 ns | 28ns | 28 ns | 88 ns | -3.6A | 12V | SILICON | SWITCHING | 20V | -4.5V | 1.47W Ta | -20V | P-Channel | -4.5 V | 65m Ω @ 1A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 17nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| SI4423DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -10A | 8V | SILICON | SWITCHING | 20V | 1.5W Ta | 0.0075Ohm | -20V | P-Channel | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| SI7455DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7455dpt1ge3-datasheets-9402.pdf | PowerPAK® SO-8 | 5 | 6 Weeks | 25mOhm | unknown | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | Single | 30 | 1 | R-PDSO-C5 | 28A | 20V | SILICON | DRAIN | 80V | 5.2W Ta 83.3W Tc | 60A | 101 mJ | -80V | P-Channel | 5160pF @ 40V | 25m Ω @ 10.5A, 10V | 4V @ 250μA | 28A Tc | 155nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQD100N04_3M6T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n043m6t4ge3-datasheets-9626.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | N-Channel | 6700pF @ 25V | 3.6mOhm @ 20A, 10V | 3.5V @ 250μA | 100A | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 2 | 12 Weeks | 1.437803g | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 32A | 450mOhm | 300 mJ | |||||||||||||||||||||||||||||||||||||||||||
| IRFR420TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 500V | 500V | 2.5W Ta 42W Tc | 8A | 3Ohm | 400 mJ | N-Channel | 360pF @ 25V | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUD50P10-43L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud50p1043le3-datasheets-1689.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 1 | 30 | 6.9W | 1 | R-PSSO-G2 | 37.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 8.3W Ta 136W Tc | TO-252AA | 40A | 100V | P-Channel | 4600pF @ 50V | 43m Ω @ 9.2A, 10V | 3V @ 250μA | 37.1A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUM50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50020ege3-datasheets-2554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 11150pF @ 30V | 2.2mOhm @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60AEL-GE3 | Vishay Siliconix | $8.05 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aelge3-datasheets-3645.pdf | TO-247-3 | TO-247AC | 600V | 379W Tc | N-Channel | 4600pF @ 100V | 65mOhm @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 222nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 43W | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLD110 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irld110pbf-datasheets-9501.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | 4 | 1 | 4-DIP, Hexdip, HVMDIP | 250pF | 9.3 ns | 47ns | 47 ns | 16 ns | 1A | 10V | 100V | 1.3W Ta | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 600mA, 5V | 2V @ 250μA | 1A Ta | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V |
