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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Neg Supply Voltage-Max (Vsup) | Neg Supply Voltage-Min (Vsup) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIHU6N62E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihu6n62ege3-datasheets-5213.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | yes | No | 1 | Single | 1 | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 620V | 78W Tc | 6A | 0.9Ohm | 88 mJ | N-Channel | 578pF @ 100V | 900m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | Lead Free | 500μA | 28 | 12 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | yes | No | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRRPBF | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 18 Weeks | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | DUAL | 5V | 2.54mm | 8 | 1 | 600mW | Multiplexer or Switches | 6V | 5V | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60020E-GE3 | Vishay Siliconix | $2.59 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60020ege3-datasheets-5926.pdf | TO-220-3 | 14 Weeks | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 14 Weeks | 12V | 2.7V | 30Ohm | 16 | no | ALSO OPERATES WITH 2.7V TO 12V SINGLE SUPPLY | unknown | 4 | NO | DUAL | NOT SPECIFIED | 5V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 280MHz | 6V | 3V | -5V | SEPARATE OUTPUT | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 55ns | 83ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60EF-T1-GE3 | Vishay Siliconix | $53.73 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh26n60eft1ge3-datasheets-6167.pdf | 8-PowerTDFN | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 202W Tc | 67A | 0.141Ohm | 353 mJ | N-Channel | 2744pF @ 100V | 141m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | VIDEO APPLICATION | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 15-3V | Not Qualified | 500MHz | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50010E-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50010ege3-datasheets-6517.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 1.75mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 2 | e0 | TIN LEAD | 400mW | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS888DN-T1-GE3 | Vishay Siliconix | $25.97 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis888dnt1ge3-datasheets-6842.pdf | PowerPAK® 1212-8S | Lead Free | 14 Weeks | 8 | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 12 ns | 8ns | 8 ns | 13 ns | 5.3A | 20V | 150V | 52W Tc | N-Channel | 420pF @ 75V | 58m Ω @ 10A, 10V | 4.2V @ 250μA | 20.2A Tc | 14.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG642DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 20μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 142.994995mg | 18V | 10V | 8Ohm | 8 | No | 300mW | 1 | 300mW | 1 | 8-SOIC | 500MHz | 100 ns | 60 ns | 15V | 12V | Single | 10V | 2 | 1 | 8Ohm | 8Ohm | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 20pF 20pF | 100ns, 60ns | 40pC | 500mOhm | -85dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 2 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sjm200bic01-datasheets-0086.pdf | Metal | 36V | 13V | 10 | 22V | 7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | -4 V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 30mA | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | Not Qualified | 250 ns | 210 ns | 22V | 20V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NO | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 4V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM201BEA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp28n65efge3-datasheets-9802.pdf | TO-220-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 5nA | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Contains Lead | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | unknown | 4 | 5nA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 515-3V | Not Qualified | SPST | 35 ns | 25 ns | 15V | Dual, Single | 10V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4776DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4776dyt1ge3-datasheets-1618.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 540.001716mg | 8 | 1 | 2.5W | 1 | 8-SO | 10 ns | 11ns | 6 ns | 11 ns | 11.9A | 20V | 30V | 4.1W Tc | 13mOhm | N-Channel | 521pF @ 15V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 11.9A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BIA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92042012C | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 2.54mm | Non-RoHS Compliant | 2016 | 20-LCC | 8.89mm | 8.89mm | 20 | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 5V | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | S-XQCC-N20 | -15V | 100Ohm | 75 dB | 15Ohm | -20V | -5V | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG44N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg44n65efge3-datasheets-2307.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 46A | 154A | 0.073Ohm | 596 mJ | N-Channel | 5892pF @ 100V | 73m Ω @ 22A, 10V | 4V @ 250μA | 46A Tc | 278nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92042022C | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 20-LCC | 8.89mm | 8.89mm | 20 | 2 | YES | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 5V | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | -15V | 100Ohm | 75 dB | 15Ohm | 150ns | -5V | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA403EJ-T1_GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa403ejt1ge3-datasheets-3338.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 30V | 13.6W Tc | P-Channel | 1880pF @ 10V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 90731022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP80090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup80090ege3-datasheets-3808.pdf | TO-220-3 | 3 | 14 Weeks | Unknown | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 5V | 375W Tc | TO-220AB | 240A | 0.011Ohm | 180 mJ | N-Channel | 3425pF @ 75V | 9.4m Ω @ 30A, 10V | 5V @ 250μA | 128A Tc | 95nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2727DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 85°C | -40°C | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2727dnt1e4-datasheets-4554.pdf | 8-UFQFN | 1.4mm | 1.4mm | 1μA | 8 | 4.3V | 1.6V | 1Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2727 | 8 | INDUSTRIAL | 1 | 30 | 190mW | Multiplexer or Switches | Not Qualified | SPST | 67 ns | 40 ns | Single | 2 | 58 dB | 0.1Ohm | BREAK-BEFORE-MAKE | NO |
