Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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SIR800ADP-T1-RE3 | Vishay Siliconix | $0.73 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir800adpt1re3-datasheets-8055.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 20V | 5W Ta 62.5W Tc | N-Channel | 3415pF @ 10V | 1.35mOhm @ 10A, 10V | 1.5V @ 250μA | 50.2A Ta 177A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG181AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | 14-DIP (0.300, 7.62mm) | 30Ohm | 14 | Yes | 2 | 825mW | 2 | 14-DIP | 18V | 10V | 2 | 2 | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3410DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3410dvt1ge3-datasheets-9140.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 21 ns | 14ns | 9 ns | 20 ns | 8A | 20V | SILICON | SWITCHING | 30V | 30V | 3V | 2W Ta 4.1W Tc | 8A | 30A | N-Channel | 1295pF @ 15V | 3 V | 19.5m Ω @ 5A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG190AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg190ap883-datasheets-7597.pdf | 16-DIP (0.300, 7.62mm) | 15V | Lead Free | 1.5mA | 30Ohm | 16 | 600μA | 900mW | 2 | 900mW | 2 | 16-DIP | 180 ns | 150 ns | 18V | 15V | Dual | 10V | 4 | 4 | 30Ohm | 30Ohm | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR310TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG202BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 50μA | 16 | 8 Weeks | 1.627801g | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 12/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf9620pbf-datasheets-1688.pdf | -200V | -3.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 350pF | 15 ns | 25ns | 15 ns | 20 ns | -3.5A | 20V | 200V | -4V | 40W Tc | 450 ns | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | -4 V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG211BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 10μA | 16 | 8 Weeks | 547.485991mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | 512/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7439DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG411DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-DIP (0.300, 7.62mm) | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | 470mW | Multiplexer or Switches | 512/+-15V | 4 | Not Qualified | R-PDIP-T16 | SEPARATE OUTPUT | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI9640GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9640gpbf-datasheets-3957.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 6.1A | 20V | 200V | -4V | 40W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG307AAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg307aak883-datasheets-7709.pdf | 14-CDIP (0.300, 7.62mm) | 2 | 14-CERDIP | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3499DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3499dvt1ge3-datasheets-4647.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 14 Weeks | 19.986414mg | Unknown | 23mOhm | 6 | Tin | No | 1 | Single | 1.1W | 1 | 6-TSOP | 27 ns | 65ns | 110 ns | 210 ns | -7A | 5V | 8V | -350mV | 1.1W Ta | 23mOhm | P-Channel | -350 mV | 23mOhm @ 7A, 4.5V | 750mV @ 250μA | 5.3A Ta | 42nC @ 4.5V | 23 mΩ | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG308BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | +-15/12V | Not Qualified | 300 ns | 200 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | 150ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUD19P06-60-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud19p0660ge3-datasheets-5898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 60mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 8 ns | 9ns | 30 ns | 65 ns | -19A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2.3W Ta 38.5W Tc | 24.2 mJ | -60V | P-Channel | 1710pF @ 25V | 60m Ω @ 10A, 10V | 3V @ 250μA | 18.3A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG406BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 12V | Contains Lead | 500μA | 28 | 8 Weeks | 4.190003g | 36V | 7.5V | 60Ohm | 28 | no | No | 1 | e0 | TIN LEAD | 625mW | 15V | 2.54mm | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 625mW | Multiplexer or Switches | 1 | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI6415DQ-T1-E3 | Vishay Siliconix | $1.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6415dqt1e3-datasheets-8202.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 16 ns | 17ns | 17 ns | 73 ns | 6.5A | 20V | SILICON | 30V | -1V | 1.5W Ta | 30A | -30V | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG302AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | Contains Lead | 500μA | 1.200007g | 50Ohm | 14 | 825mW | 2 | 14-CERDIP | 300 ns | 250 ns | 15V | Dual, Single | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 270mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 100V | N-Channel | 360pF @ 25V | 4 V | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG408LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2012 | /files/vishay-dg408lak-datasheets-8613.pdf | 16-DIP (0.300, 7.62mm) | 7.62mm | 16 | 14 Weeks | 12V | 3V | 29Ohm | 16 | no | unknown | 1 | NO | DUAL | NOT SPECIFIED | 5V | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | Multiplexer or Switches | 0.7mA | 1 | Not Qualified | 6V | 3V | -5V | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 40ns | 55ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.946308g | Unknown | 500mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 11A | 20V | 200V | 200V | 4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | 4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG412LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 17Ohm | 4 | 16-CERDIP | 280MHz | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA462DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia462djt1ge3-datasheets-2125.pdf | PowerPAK® SC-70-6 | 14 Weeks | 6 | No | Single | 3.5W | 1 | PowerPAK® SC-70-6 Single | 570pF | 10ns | 10 ns | 15 ns | 12A | 20V | 30V | 3.5W Ta 19W Tc | 18mOhm | 30V | N-Channel | 570pF @ 15V | 18mOhm @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 18 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG412DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 10 Weeks | 665.986997mg | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4386DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4386dyt1e3-datasheets-3241.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | 12 ns | 9ns | 9 ns | 35 ns | 16A | 20V | SILICON | SWITCHING | 30V | 30V | 2V | 1.47W Ta | 0.007Ohm | N-Channel | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG411HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 10 Weeks | 547.485991mg | 44V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO/NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SISH112DN-T1-GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish112dnt1ge3-datasheets-3738.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 1.5W Tc | N-Channel | 2610pF @ 15V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250μA | 11.3A Tc | 27nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG613EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg612eent1ge4-datasheets-7435.pdf | 16-UFQFN | 16 Weeks | 4 | 16-miniQFN (1.8x2.6) | 1GHz | 115Ohm | 3V~12V ±3V~5V | 1:1 | SPST - NO/NC | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 2.5Ohm | -74dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SISH106DN-T1-GE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish106dnt1ge3-datasheets-4029.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 6.2mOhm @ 19.5A, 4.5V | 1.5V @ 250μA | 12.5A Ta | 27nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2034EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2034edqt1ge3-datasheets-5382.pdf | 12-VFQFN Exposed Pad | 19 Weeks | unknown | SINGLE-ENDED MULTIPLEXER | 1 | 166MHz | 2.5Ohm | 4:1 | 1.8V~5.5V | SP4T | 2nA | 7pF - | 25ns, 20ns | -2.6pC | 20m Ω | -71dB @ 1MHz |
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