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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Output Peak Current Limit-Nom | Built-in Protections | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI1034X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1034xt1ge3-datasheets-8955.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 10Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1034 | 6 | 2 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | R-PDSO-F6 | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 5V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | 2 N-Channel (Dual) | 1.2 V | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 180mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-16P-E3 | Vishay Siliconix | $2.85 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0316pe3-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 3 | Single | 6.5W | 1 | TO-252, (D-Pak) | 1.15nF | 20ns | 12 ns | 25 ns | 15A | 20V | 30V | 30V | 6.5W Ta 40.8W Tc | 16mOhm | 30V | N-Channel | 1150pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 13nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp450pbf-datasheets-1281.pdf | 500V | 14A | TO-247-3 | 15.87mm | 24.86mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 5.45mm | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 190W | 1 | 150°C | 17 ns | 47ns | 44 ns | 92 ns | 14A | 20V | 500V | SILICON | SWITCHING | 4V | 190W Tc | 810 ns | 56A | 760 mJ | 500V | N-Channel | 2600pF @ 25V | 2 V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N10-16L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup60n1016le3-datasheets-3351.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 16mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 150W | 1 | FET General Purpose Power | 12 ns | 90ns | 130 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 150W Tc | TO-220AB | N-Channel | 3820pF @ 25V | 16m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4202DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4202dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 14MOhm | 8 | No | 75A | 30V | 3.7W | 2 | Dual | 2.4W | 2 | 8-SO | 710pF | 8 ns | 12.1A | 20V | 30V | 1V | 3.7W | 17mOhm | 30V | 2 N-Channel (Dual) | 710pF @ 15V | 14mOhm @ 8A, 10V | 2.5V @ 250μA | 12.1A | 17nC @ 10V | Logic Level Gate | 14 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8405DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8405dbt1e1-datasheets-6204.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | No | 1 | Single | 2.77W | 4-Microfoot | 16 ns | 32ns | 32 ns | 120 ns | -3.6A | 8V | 12V | 1.47W Ta | 55mOhm | -12V | P-Channel | 55mOhm @ 1A, 4.5V | 950mV @ 250μA | 3.6A Ta | 21nC @ 4.5V | 55 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 10 ns | 30 ns | 4.9A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.036Ohm | 5 mJ | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR172DP-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir172dpt1ge3-datasheets-8454.pdf | PowerPAK® SO-8 | Lead Free | 5 | 12 Weeks | 506.605978mg | Unknown | 12.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 19 ns | 19ns | 13 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5V | 29.8W Tc | 50A | 22 mJ | N-Channel | 997pF @ 15V | 2.5 V | 8.9m Ω @ 16.1A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ADS-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2319adst1ge3-datasheets-7856.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.5W Tc | P-Channel | 620pF @ 20V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4836DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4836dyt1ge3-datasheets-6582.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 860pF | 35 ns | 41ns | 115 ns | 190 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 3m Ω @ 25A, 4.5V | 400mV @ 250μA (Min) | 17A Ta | 75nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB452DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sib452dkt1ge3-datasheets-9461.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 14 Weeks | 95.991485mg | Unknown | 2.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | 12 ns | 16ns | 15 ns | 30 ns | 1.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 2.4W Ta 13W Tc | 190V | N-Channel | 135pF @ 50V | 2.4 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.5A Tc | 6.5nC @ 10V | 1.8V 4.5V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB417AEDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417aedkt1ge3-datasheets-3636.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 32mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 1 | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 19 ns | 27ns | 29 ns | 32 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 8V | P-Channel | 878pF @ 4V | 32m Ω @ 3A, 4.5V | 1V @ 250μA | 9A Tc | 18.5nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 540mOhm | 3 | Tin | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 43W Tc | 200 ns | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishay-2n6661jtxp02-datasheets-9343.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 36 Weeks | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P08-25L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0825le3-datasheets-1721.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 25.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 8.3W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 45 ns | 25ns | 100 ns | 95 ns | -12.5A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 8.3W Ta 136W Tc | 50A | 40A | -80V | P-Channel | 4700pF @ 40V | 25.2m Ω @ 12.5A, 10V | 3V @ 250μA | 50A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP22N60K | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp22n60kpbf-datasheets-2968.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | No | 1 | Single | 370W | TO-247-3 | 3.57nF | 26 ns | 99ns | 37 ns | 48 ns | 22A | 30V | 600V | 370W Tc | 280mOhm | 600V | N-Channel | 3570pF @ 25V | 280mOhm @ 13A, 10V | 5V @ 250μA | 22A Tc | 150nC @ 10V | 280 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sum110p0607le3-datasheets-3353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.946308g | No SVHC | 6.9MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 160ns | 240 ns | 110 ns | -11A | 20V | SILICON | SWITCHING | 60V | -3V | 3.75W Ta 375W Tc | 240A | -60V | P-Channel | 11400pF @ 25V | -3 V | 6.9m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 345nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7178DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7178dpt1ge3-datasheets-5111.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 10ns | 11 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 6.25W Ta 104W Tc | 100V | N-Channel | 2870pF @ 50V | 4.5 V | 14m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2392dst1ge3-datasheets-1189.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 68ns | 20 ns | 10 ns | 3.1A | 3V | SILICON | SWITCHING | 1.25W Ta 2.5W Tc | 0.126Ohm | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4463BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4463bdyt1e3-datasheets-7759.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 11mOhm | 8 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Not Qualified | 35 ns | 60ns | 60 ns | 115 ns | 9.8A | 12V | SILICON | 20V | 20V | -1.4V | 1.5W Ta | P-Channel | 11m Ω @ 13.7A, 10V | 1.4V @ 250μA | 9.8A Ta | 56nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4410bdyt1e3-datasheets-9808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 186.993455mg | Unknown | 13.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 40 ns | 7.5A | 20V | SILICON | SWITCHING | 1V | 1.4W Ta | 30V | N-Channel | 1 V | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 7.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4896DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4896dyt1e3-datasheets-8718.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 11ns | 11 ns | 40 ns | 9.5A | 20V | SILICON | 2V | 1.56W Ta | 6.7A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 6.7A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS478DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sis478dnt1ge3-datasheets-2435.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 12A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 15.6W Tc | 40A | 0.02Ohm | 5 mJ | N-Channel | 398pF @ 15V | 20m Ω @ 8A, 10V | 2.5V @ 250μA | 12A Tc | 10.5nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 4Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 12 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS612EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis612edntt1ge3-datasheets-3590.pdf | PowerPAK® 1212-8S | Lead Free | 13 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 2.06nF | 50A | 20V | 3.7W Ta 52W Tc | N-Channel | 2060pF @ 10V | 3.9mOhm @ 14A, 4.5V | 1.2V @ 1mA | 50A Tc | 70nC @ 10V | 3.9 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7117DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7117dnt1e3-datasheets-3206.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.2Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 7 ns | 11ns | 11 ns | 16 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 12.5W Tc | 2.2A | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.17A Tc | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si3865ddvt1ge3-datasheets-2823.pdf | 2.8A | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 5 | 14 Weeks | 19.986414mg | No SVHC | 12V | 1.5V | 165mOhm | 6 | On/Off | No | 12V | 1 | Slew Rate Controlled | 830mW | DUAL | GULL WING | 1.8V | 0.95mm | SI3865D | 5 | ANALOG CIRCUIT | 830mW | R-PDSO-G5 | 2.8A | 1A | P-Channel | 1.5V~12V | 1 | General Purpose | High Side | 45m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1308EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1308edlt1ge3-datasheets-5716.pdf | SC-70, SOT-323 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 3 | 14 Weeks | 124.596154mg | No SVHC | 132mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 400mW | 1 | FET General Purpose Power | 150°C | 2 ns | 9ns | 8 ns | 8 ns | 1.5A | 12V | SILICON | SWITCHING | 600mV | 400mW Ta 500mW Tc | 30V | N-Channel | 105pF @ 15V | 132m Ω @ 1.4A, 10V | 1.5V @ 250μA | 1.4A Tc | 4.1nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si3865bdvt1e3-datasheets-2147.pdf | 2.9A | SOT-23-6 Thin, TSOT-23-6 | 3.0988mm | 990.6μm | 1.7018mm | Lead Free | 6 | Unknown | 175mOhm | 6 | On/Off | yes | EAR99 | No | 1 | e3 | Slew Rate Controlled | Matte Tin (Sn) | 830mW | GULL WING | 260 | 2.5V | 0.95mm | SI3865 | 6 | 8V | Dual | 40 | 830mW | 2 | Peripheral Drivers | 2.9A | P-Channel | 1.8V~8V | 2.9A | 8V | 1 | General Purpose | High Side | 1A | TRANSIENT | 1 | 60mOhm | 8V | 45m Ω | 1:1 |
